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    Vishay Siliconix SI8402DB-T1-E1

    MOSFET N-CH 20V 5.3A 4MICROFOOT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI8402DB-T1-E1 Cut Tape
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    RS SI8402DB-T1-E1 Bulk 3,000
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    Vishay Huntington SI8402DB-T1-E1

    MOSFET N-CH 20V 5.3A 2X2 4-MFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI8402DB-T1-E1 15,100
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    • 100 $0.582
    • 1000 $0.388
    • 10000 $0.388
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    SI8402DB Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI8402DB Vishay Siliconix 20-V N-Channel 1.8-V (G-S) MOSFET Original PDF
    Si8402DB SPICE Device Model Vishay 20-V N-Channel 1.8-V (G-S) MOSFET Original PDF
    SI8402DB-T1 Vishay Siliconix 20-V N-Channel 1.8-V (G-S) MOSFET Original PDF
    SI8402DB-T1-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 5.3A 2X2 4-MFP Original PDF

    SI8402DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8402 MOSFET

    Abstract: 8402 silicon diode J-STD-020A Si8402DB Si8402DB-T1
    Text: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.037 @ VGS = 4.5 V 7.3 0.039 @ VGS = 2.5 V 7.1 0.043 @ VGS = 1.8 V 6.8 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8402DB Si8402DB-T1 Si8402DB-T1--E1 08-Apr-05 8402 MOSFET 8402 silicon diode J-STD-020A

    smd marking AAAA

    Abstract: No abstract text available
    Text: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


    Original     		PDF Si8402DB Si8402DB-T1-E1 11-Mar-11 smd marking AAAA

    Si8401DB-T1

    Abstract: Si8402DB-T1 Si8405DB-T1 Si8411DB-T1
    Text: Tape Information Vishay Siliconix MICRO FOOTr 2x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.000.10 4.000.10 +0.10 1.50 -0.00 A 2.000.05 B B 1.75  0.1 3.5  0.05 8.0 +0.30 -0.10 SECTION A-A


    Original     		PDF 275-mm Si8401DB-T1 Si8402DB-T1 Si8405DB-T1 Si8411DB-T1 10-sprocket 93-5211-x) 92-5210-x)

    Untitled

    Abstract: No abstract text available
    Text: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.037 @ VGS = 4.5 V 7.3 0.039 @ VGS = 2.5 V 7.1 0.043 @ VGS = 1.8 V 6.8 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8402DB Si8402DB-T1 Si8402DB-T1--E1 S-50066--Rev. 17-Jan-05

    Untitled

    Abstract: No abstract text available
    Text: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


    Original     		PDF Si8402DB Si8402DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Tape Information Vishay Siliconix MICRO FOOT 2 x 2: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.000.10 4.000.10 + 0.10 Ø 1.50 - 0.00 A 2.000.05 B B 1.75  0.1 3.5  0.05 8.0 +- 0.30 0.10 SECTION A-A


    Original     		PDF Si8401DB-T1 Si8402DB-T1 Si8405DB-T1 Si8411DB-T1 93-5211-X) 92-5210-X) C10-0948-Rev. 11-Oct-10 93-5222-X

    8402 MOSFET

    Abstract: Si8402DB
    Text: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


    Original     		PDF Si8402DB Si8402DB-T1-E1 18-Jul-08 8402 MOSFET

    34065

    Abstract: 4833 AN609 Si8402DB
    Text: Si8402DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si8402DB AN609 08-Aug-07 34065 4833

    Si8402DB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8402DB 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


    Original     		PDF Si8402DB Si8402DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si8401DB-T1

    Abstract: Si8402DB-T1 Si8405DB-T1 Si8411DB-T1
    Text: Tape Information Vishay Siliconix MICRO FOOTr 2x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.00"0.10 4.00"0.10 +0.10 O1.50−0.00 A 2.00"0.05 0.254"0.02 B BO B 1.75 " 0.1 3.5 " 0.05 8.0 +0.30 −0.10 5_ MAX


    Original     		PDF 275-mm Si8401DB-T1 Si8402DB-T1 Si8405DB-T1 Si8411DB-T1 10-sprocket 93-5211-x) 92-5210-x)

    Si8413DB

    Abstract: si8409db Si8401DB Si8402DB Si8405DB Si8411DB Si8415DB Si8419DB t1/Si8413DB
    Text: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8401DB Si8402DB Si8405DB Si8409DB Si8411DB Si8413DB Si8415DB Si8419DB MICRO FOOTr 2X2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8401DB


    Original     		PDF Si8401DB Si8402DB Si8405DB Si8409DB Si8411DB Si8413DB Si8415DB Si8419DB 275-mm t1/Si8413DB

    4833

    Abstract: AN609 Si8402DB
    Text: Si8402DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si8402DB AN609 01-Mar-06 4833

    Untitled

    Abstract: No abstract text available
    Text: Si8402DB Vishay Siliconix 20 V N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.037 at VGS = 4.5 V 7.3 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


    Original     		PDF Si8402DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si8402DB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8402DB 30-Nov-03

    8402 MOSFET

    Abstract: 8402 8402 silicon diode J-STD-020A Si8402DB Si8402DB-T1
    Text: Si8402DB Vishay Siliconix New Product 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.037 @ VGS = 4.5 V 7.3 0.039 @ VGS = 2.5 V 7.1 0.043 @ VGS = 1.8 V 6.8 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging


    Original     		PDF Si8402DB Si8402DB-T1 S-32557--Rev. 15-Dec-03 8402 MOSFET 8402 8402 silicon diode J-STD-020A

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    SI-8100D

    Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,


    Original     		PDF Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    gs 069

    Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
    Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04