8900E
Abstract: J-STD-020A Si8900EDB sn 4060
Text: Si8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V
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Si8900EDB
S-21474--Rev.
26-Aug-02
8900E
J-STD-020A
sn 4060
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10-SPROCKET
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix MICRO FOOTr 5x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8900EDB-T2 4.000.10 4.000.10 +0.10 1.50 -0.00 A 2.000.05 B 1.75 0.10 B 5.50 0.05 12.0 +0.30 -0.10 SECTION A-A A SECTION B-B NOTES: 1. 10-sprocket hole pitch cumulative tolerance 0.2.
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275-mm
Si8900EDB-T2
10-sprocket
93-5211-x)
92-5210-x)
T-04476--Rev.
30-Aug-04
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c 5706
Abstract: AN609 Si8900EDB
Text: Si8900EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si8900EDB
AN609
08-Aug-07
c 5706
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Si8900EDB
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix MICRO FOOTr 5x2: 0.8−mm PITCH, 0.275−mm BUMP HEIGHT Si8900EDB−T2 4.00"0.10 4.00"0.10 +0.10 O1.50 - 0.00 A 2.00"0.05 0.279"0.02 B BO B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 - 0.10 5_ MAX SECTION A-A A 5_ MAX AO KO SECTION B-B
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275-mm
Si8900EDB-T2
10-sprocket
93-5211-x)
92-5210-x)
T-02077--Rev.
13-May-02
93-5224-x
Si8900EDB
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S1 0780
Abstract: 10-BUMP 8900E J-STD-020A Si8900EDB
Text: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 IS1S2 (A) 0.024 @ VGS = 4.5 V 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View MICRO FOOT
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Si8900EDB
8900E
08-Apr-05
S1 0780
10-BUMP
8900E
J-STD-020A
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8900E
Abstract: Si8900EDB
Text: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8900EDB MICRO FOOTr 2X5: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8900EDB T2 Device on Tape Orientation 8900E xxx 8900E xxx 8900E
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Si8900EDB
275-mm
8900E
Specification--PACK-0023-2
S-50073,
8900E
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Untitled
Abstract: No abstract text available
Text: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier
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Si8900EDB
8900E
8900E
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si8407DB
Abstract: Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB Si8401DB Si8405DB Si8900EDB
Text: Device Orientation—MICRO FOOTrPackages Vishay Siliconix Part Number Index APPENDIX AĊMOSFETS Part Number APPENDIX BĊANALOG ICS Appendix Part Number Appendix Si8401DB A -1 DG3000DB B -1 Si8405DB A -1 DG3001DB B -2 Si8407DB A -2 DG3408DB B -3 Si8900EDB A -3
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Si8401DB
DG3000DB
Si8405DB
DG3001DB
Si8407DB
DG3408DB
Si8900EDB
DG3409DB
Si8902EDB
S-31635--Rev.
Vishay Siliconix
of 8407
DG3000DB
DG3001DB
DG3408DB
DG3409DB
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Untitled
Abstract: No abstract text available
Text: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier
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Si8900EDB
8900E
8900E
11-Mar-11
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S1 0780
Abstract: 8900E J-STD-020A Si8900EDB
Text: Si8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.40 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V
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Si8900EDB
S-20802--Rev.
01-Jul-02
S1 0780
8900E
J-STD-020A
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10-BUMP
Abstract: 8900E Si8900EDB ks-110
Text: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier
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Si8900EDB
8900E
18-Jul-08
10-BUMP
8900E
ks-110
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31916
Abstract: No abstract text available
Text: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V
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Si8900EDB
8900E
8900E
S-31916--Rev.
15-Sep-03
31916
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0948 B
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix MICRO FOOT 5 x 2: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT Si8900EDB-T2 4.000.10 4.000.10 + 0.10 Ø 1.50 - 0.00 A 2.000.05 B B 1.75 0.10 5.50 0.05 12.0 + 0.30 - 0.10 SECTION A-A A SECTION B-B Notes 1. 10 sprocket hole pitch cumulative tolerance ± 0.2.
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Si8900EDB-T2
93-5211-X)
92-5210-X)
C10-0948-Rev.
11-Oct-10
93-5224-X
0948 B
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Si8900EDB
Abstract: A1731
Text: SPICE Device Model Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si8900EDB
S-60073Rev.
23-Jan-06
A1731
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Si8900EDB
Abstract: No abstract text available
Text: SPICE Device Model Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si8900EDB
18-Jul-08
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10-BUMP
Abstract: 8900E J-STD-020A Si8900EDB
Text: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 IS1S2 (A) 0.024 @ VGS = 4.5 V 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View MICRO FOOT
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Si8900EDB
8900E
S-50066--Rev.
17-Jan-05
10-BUMP
8900E
J-STD-020A
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Untitled
Abstract: No abstract text available
Text: Si8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VSS (V) rSS(on) (W) 20 0.024 @ VGS = 4.5 V 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 APPLICATIONS 0.40 @ VGS = 1.8 V 5.5 D Battery Protection Circuit
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Si8900EDB
8900E
8900E
10BUMP
S-20217--Rev.
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Untitled
Abstract: No abstract text available
Text: Si8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.40 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V
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Si8900EDB
8900E
8900E
S-21338--Rev.
05-Aug-02
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UP78
Abstract: Aaa SMD MARKING
Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and
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Si8401DB
Si3443DV
Si8401DB-T1-E1
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
UP78
Aaa SMD MARKING
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Untitled
Abstract: No abstract text available
Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si8473EDB
2002/95/EC
8473E
Si8473EDB-T1-E1
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SI-8100D
Abstract: si8100 Si8100DB
Text: Si8100DB Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, d RDS(on) () (Max.) 25 0.0108 at VGS = 10 V 9.5 0.0124 at VGS = 4.5 V 8.9 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si8100DB
2002/95/EC
Si8100DB-T2trademarks
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
SI-8100D
si8100
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Untitled
Abstract: No abstract text available
Text: Si8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si8475EDB
2002/95/EC
8475E
Si8475EDB-T1-E1
25hay
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si8473EDB
2002/95/EC
8473E
Si8473EDB-T1-E1
11-Mar-11
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smd marking AAAA
Abstract: No abstract text available
Text: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging
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Si8402DB
Si8402DB-T1-E1
11-Mar-11
smd marking AAAA
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