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    8475E Search Results

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    Analog Devices Inc AD8475-EVALZ

    EVAL BOARD FOR AD8475
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    DigiKey AD8475-EVALZ Box 1
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    Mouser Electronics AD8475-EVALZ 6
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    Analog Devices Inc AD8475-EVALZ 59
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    Vishay Siliconix SI8475EDB-T1-E1

    MOSFET P-CH 20V 4MICROFOOT
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    Vishay Intertechnologies MAL225098475E3

    Rad 470uF 63V 16x20 105?C (CA) - Tape and Reel (Alt: MAL225098475E3)
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    Avnet Americas MAL225098475E3 Reel 6 Weeks 750
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    Mouser Electronics MAL225098475E3 864
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    Newark MAL225098475E3 Bulk 660 1
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    TTI MAL225098475E3 Bulk 750
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    Vishay Intertechnologies MAL217098475E3

    470?F 63V 16x20 105?C 7000h - Bulk (Alt: MAL217098475E3)
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    Avnet Americas MAL217098475E3 Bulk 6 Weeks 750
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    Vishay Intertechnologies MAL215098475E3

    470uF 63V 16x20 105?C 7000h - Bulk (Alt: MAL215098475E3)
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    Avnet Americas MAL215098475E3 Bulk 6 Weeks 750
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    Mouser Electronics MAL215098475E3 720
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    Newark MAL215098475E3 Bulk 750
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    Avnet Abacus MAL215098475E3 9 Weeks 250
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    Vyrian MAL215098475E3 281
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    8475E Datasheets Context Search

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    PDF

    Untitled

    Abstract: No abstract text available
    Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: 8475EP DESCRIPTION: 50 OHM FLANGE LOAD ASSEMBLY DWG: 2100664 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50 OHMS NOMINAL. 1.1.2 FREQUENCY RANGE: DC-18 GHZ. 1.1.3 INPUT POWER MAX @ 60°C : 1.1.3.1 AVERAGE: 10 WATT.


    Original
    8475EP DC-18 MIL-STD-454, MIL-STD-202, MIL-D-39030. MIL-STD-202STD-130. MC0023. PDF

    Untitled

    Abstract: No abstract text available
    Text: 8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    Si8475EDB 2002/95/EC 8475E Si8475EDB-T1-E1 25hay 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8475EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 VDS (V) - 20 • • • • TrenchFET Power MOSFET Typical ESD Protection 3000 V Gate-Source OVP


    Original
    Si8475EDB 8475E Si8475EDB-T1-E1 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    Si8475EDB 2002/95/EC 8475E Si8475EDB-T1-E1 25trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    si84

    Abstract: si8475
    Text: 8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    Si8475EDB 2002/95/EC 8475E Si8475EDB-T1-E1 18-Jul-08 si84 si8475 PDF

    D3052

    Abstract: 316b1
    Text: 1234567489ABCDEFDD 636B811 1234546789A8BCDC5E8F 254D72888EA8FF  F3 !" 1#$%$& 3B9D7'936B62 561583 3 !"


    Original
    1234567489ABCDEFD 1234546789A8BCDC5E8F 254D72 12234567893A758BCD834E3F2 367D3 367D37D, D7D83 -D73A758BC 6E34D3 -D7936 D3052 316b1 PDF