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    Vishay Siliconix SI8475EDB-T1-E1

    MOSFET P-CH 20V 4MICROFOOT
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    Vishay Intertechnologies SI8475EDB-T1-E1

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    SI8475 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8475EDB-T1-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V MICROFOOT Original PDF

    SI8475 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Si8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si8475EDB 2002/95/EC 8475E Si8475EDB-T1-E1 25hay 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8475EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 VDS (V) - 20 • • • • TrenchFET Power MOSFET Typical ESD Protection 3000 V Gate-Source OVP


    Original     		Si8475EDB 8475E Si8475EDB-T1-E1 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si8475EDB 2002/95/EC 8475E Si8475EDB-T1-E1 25trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    mc 7822

    Abstract: AN609
    Text: Si8475EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si8475EDB AN609, 05-Feb-10 mc 7822 AN609 PDF

    si84

    Abstract: si8475
    Text: Si8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si8475EDB 2002/95/EC 8475E Si8475EDB-T1-E1 18-Jul-08 si84 si8475 PDF