EIA-364-31
Abstract: EIA-364-32
Text: Product Specification 108-2012 31Jul08 Rev D MAG-MATE* Standard Terminals 1. SCOPE 1.1. Content This specification covers the perform ance requirem ents for standard MAG-MATE* term inals. These term inals are designed for general use as a m agnet wire to external circuit interface and are com patible
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31Jul08
200/C.
EIA-364-31
EIA-364-32
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Untitled
Abstract: No abstract text available
Text: IRFPS30N60K, SiHFPS30N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 220 Qgs (nC) 64 Qgd (nC) 110 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFPS30N60K,
SiHFPS30N60K
SUPER-247TM
IRFPS30N60KPbF
18-Jul-08
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PDF
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COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-1102
I8262
COLOR tv tube charger circuit diagrams
MBRF 1015 CT
smd diode S4 67A
DO-213AB smd diode color marking code
vacuum tube applications data book
V40100PG
diode 719 b340a
EQUIVALENT 31gf6
SB050 D 168
s104 diode 87a
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PDF
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E192
Abstract: E192 Series IEC60063
Text: E-Series Values Vishay Standard Series Values in a Decade for Resistance and Capacitances E3-E192 E192 100 101 102 104 105 106 107 109 110 111 113 114 115 117 118 120 121 123 124 126 127 129 130 132 133 135 137 138 140 142 143 145 147 149 150 152 154 156 158
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E3-E192
31-Jul-08
E192
E192 Series
IEC60063
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Untitled
Abstract: No abstract text available
Text: P-NS Vishay Thin Film Commercial Thin Film Chip Resistors FEATURES • Lead Pb -free or Sn/Pb terminations available • Moisture resistant (SPM) special passivation method • Non-standard values available RoHS* COMPLIANT • Pre-tinned terminations over nickel barrier (Gold available)
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18-Jul-08
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PA 66 FLAMABILITY RATING: UL94-V0 COLOR: BLUE METAL HOUSING: BRASS CuZn TERMINAL SCREW: STEEL ZINC PLATING "-" SLOT TYPE WIRE GUARD: STAINLESS STEEL SURFACE OF SOLDER TAIL PLATING: TIN A ENVIRONMENTAL
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UL94-V0
250VAC
29-OCT-08
31-JUL-08
30-OCT-07
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 66 MAX TEMPERATURE: WAVE SOLDERING COMPATIBLE COLOR: BLUE METAL HOUSING: BRASS CuZn TERMINAL SCREW: STEEL ZINC PLATING "+/-" SLOT TYPE WIRE GUARD: STAINLESS STEEL SURFACE OF SOLDER TAIL PLATING: TIN
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UL94-V0
300VAC
250VAC
31-JUL-08
30-OCT-07
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PDF
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Mini USB smt
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS TIN PLATED QUALITY CLASS: 1500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C
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UL94-V0
E323964
08-NOV-11
22-JUN-11
19-NOV-09
31-JUL-08
Mini USB smt
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20100S
Abstract: J-STD-002 VF20100S
Text: New Product V20100S, VF20100S, VB20100S & VI20100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power
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V20100S,
VF20100S,
VB20100S
VI20100S
ITO-220AB
O-220AB
V20100S
VF20100S
O-263AB
J-STD-020,
20100S
J-STD-002
VF20100S
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42056
Abstract: sprague 757d 7+segment+display+sm+42056+national+instrument 7+Segment+sm+42056 757D
Text: 757D Vishay Sprague Aluminum Capacitors + 105 °C, Miniature, Radial Lead FEATURES • Low impedance • Low ESR • High ripple current capability • High capacitance • Long life and stability Fig.1 Component outline QUICK REFERENCE DATA DESCRIPTION RIPPLE CURRENT MULTIPLIERS
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18-Jul-08
42056
sprague 757d
7+segment+display+sm+42056+national+instrument
7+Segment+sm+42056
757D
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MBRB30H45CTHE3
Abstract: MBRB30H45C MBR30H35CT
Text: New Product MBR F,B 30H35CT thru MBR(F,B)30H60CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency
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30H35CT
30H60CT
O-220AB
ITO-220AB
MBR30HxxCT
MBRF30HxxCT
O-263AB
J-STD-020,
MBRB30H45CTHE3
MBRB30H45C
MBR30H35CT
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Untitled
Abstract: No abstract text available
Text: M Vishay Thin Film Commercial Thick Film Chip Resistors FEATURES • Lead Pb -free or Sn/Pb terminations available SURFACE MOUNT CHIPS • High purity alumina substrate for high power dissipation (2 W max.) Pb-free Available RoHS* • Wraparound terminations featuring a thin film COMPLIANT
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18-Jul-08
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Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0103-0810
Leader 8020 schematics Oscilloscope
smd diode schottky code marking GW
sn 16848
APPLICATION NOTE BpW77
IEC-60050
BPw104
PHOTO TRANSISTOR BPW77
BPW34 PHOTODIODE THEORY
Marking Code SMD databook 2010
bpw104s
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Untitled
Abstract: No abstract text available
Text: IRFPS30N60K, SiHFPS30N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 220 Qgs (nC) 64 Qgd (nC) 110 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFPS30N60K,
SiHFPS30N60K
SUPER-247TM
Super-247TM
IRFPS30N60KPbF
SiHFPS30N60K-E3
IRFPS30N60K
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.110 Qg (Max.) (nC) 330 Qgs (nC) 84 Qgd (nC) 150 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*
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IRFPS40N60K,
SiHFPS40N60K
SUPER-247TM
12-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLUE CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: STEEL TIN PLATED QUALITY CLASS: 3 AS PER CECC 75 301-802 A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 85°C
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UL94-V0
0250V
31-JUL-08
10-DEC-07
23-APR-04
15-OCT-02
01-MAR-01
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JESD22-B102
Abstract: J-STD-002
Text: New Product SS25S & SS26S Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop
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SS25S
SS26S
DO-214AC
J-STD-020,
2002/95/EC
2002/96/EC
18-Jul-08
JESD22-B102
J-STD-002
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VB30100S
Abstract: VF30100S J-STD-002 V30100S VI30100S DSA00267801
Text: New Product V30100S, VF30100S, VB30100S & VI30100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power
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V30100S,
VF30100S,
VB30100S
VI30100S
ITO-220AB
O-220AB
V30100S
J-STD-020,
O-263AB
VF30100S
VB30100S
VF30100S
J-STD-002
V30100S
VI30100S
DSA00267801
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MBR30H35CT
Abstract: MBR30H60CT JESD22-B102 J-STD-002 30H60
Text: New Product MBR F,B 30H35CT thru MBR(F,B)30H60CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency
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30H35CT
30H60CT
O-220AB
J-STD-020,
O-263AB
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
MBR30H35CT
MBR30H60CT
JESD22-B102
J-STD-002
30H60
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J-STD-002
Abstract: No abstract text available
Text: New Product V20100C, VF20100C, VB20100C & VI20100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power
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V20100C,
VF20100C,
VB20100C
VI20100C
ITO-220AB
O-220AB
V20100C
J-STD-020,
O-263AB
VF20100C
J-STD-002
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2222 035 26101
Abstract: 16339 EYS 07 123 SAL-A
Text: 123 SAL-A Vishay BCcomponents Aluminum Capacitors Solid Axial FEATURES • Polarized aluminum electrolytic capacitors, solid electrolyte MnO2 • Axial leads, aluminum case, ceramic seal, blue insulation sleeve Fig.1 Component outline Pb-free Available RoHS*
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al576
31-Jul-08
2222 035 26101
16339
EYS 07
123 SAL-A
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IRFPS40N60K
Abstract: No abstract text available
Text: IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.110 Qg (Max.) (nC) 330 Qgs (nC) 84 Qgd (nC) 150 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*
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IRFPS40N60K,
SiHFPS40N60K
SUPER-247TM
18-Jul-08
IRFPS40N60K
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PDF
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BYX10GP
Abstract: JESD 201 class 1A JESD 201 byx10 DO-204AL JESD22-B102 J-STD-002 89112
Text: BYX10GP Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • 0.36 A operation at TA = 40 °C with no thermal runaway
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BYX10GP
DO-204AL
DO-41)
MIL-S-19500
2002/95/EC
2002/96/EC
31-Jul-08
BYX10GP
JESD 201 class 1A
JESD 201
byx10
DO-204AL
JESD22-B102
J-STD-002
89112
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Schottky Diode 039 B34
Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-0809
Schottky Diode 039 B34
S4 84a DIODE schottky
MELF ZENER DIODE color bands blue
diode RGP 15J
sb050 d 331
s104 diode 87a
252 B34 SMD ZENER DIODE
SB050 transistor equivalent
MELF DIODE color bands
smd transistor P2D
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