Untitled
Abstract: No abstract text available
Text: TetraFET D1210UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D1210UK
175MHz
D1210UK
175MHz
|
FET 3205
Abstract: 3205 FET D1210UK
Text: TetraFET D1210UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D1210UK
175MHz
D1210UK
175MHz
FET 3205
3205 FET
|
Untitled
Abstract: No abstract text available
Text: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D1210UK
175MHz
D1210UK
|
Untitled
Abstract: No abstract text available
Text: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D1210UK
175MHz
D1210UK
|
3205 FET
Abstract: FET 3205 transistor c 3205 C 3205 D1210UK
Text: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D1210UK
175MHz
D1210UK
175MHz
3205 FET
FET 3205
transistor c 3205
C 3205
|
D1210UK
Abstract: No abstract text available
Text: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D1210UK
175MHz
D1210UK
|
transistor 3205 equivalent
Abstract: data sw 3205 microwave Duplexer pdc 140m FET 3205 LM3200 LM3202 LM3203 LM3204 LM3205
Text: Powering RF Power Amplifiers with Magnetic Buck Converters Mathew Jacob Hello and welcome to today’s National Semiconductor Online Seminar. I’m Michelle Miller and I will be your host. Before we begin, I’d like to go over the operation of your seminar
|
Original
|
PDF
|
|
TO-243AA
Abstract: diode marking CODE VN G1 s4 marking code siemens VN3205N8-G
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with
|
Original
|
PDF
|
VN3205
MS-001,
DSFP-VN3205
B020608
TO-243AA
diode marking CODE VN G1
s4 marking code siemens
VN3205N8-G
|
DIODE S4 08
Abstract: vn3205p-g VN3205N8-G diode sot-89 marking code S1
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with
|
Original
|
PDF
|
VN3205
MS-001,
DSFP-VN3205
A101507
DIODE S4 08
vn3205p-g
VN3205N8-G
diode sot-89 marking code S1
|
VN3205
Abstract: No abstract text available
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices
|
Original
|
PDF
|
VN3205
MS-001,
DSFP-VN3205
A072507
VN3205
|
VN3205N6
Abstract: diode marking CODE VN G1 vn2lw VN3205 SOT89 MARKING CODE 43 diode marking CODE VN S2
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination
|
Original
|
PDF
|
VN3205
MS-001,
DSFP-VN3205
A071607
VN3205N6
diode marking CODE VN G1
vn2lw
SOT89 MARKING CODE 43
diode marking CODE VN S2
|
marking 3A sot-89
Abstract: 3V02 SIVN3205 VN3205
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with
|
Original
|
PDF
|
VN3205
DSFP-VN3205
B022109
marking 3A sot-89
3V02
SIVN3205
|
M3202
Abstract: M3221 M3206 H3205 L3231 M3233 M3243 H3202 H3206 m3201
Text: FULL SIZE D.I.L. M3201 thru M3207 L3201 thru L3207 M3221 thru M3223 L3221 thru L3223 M3231 thru M3233 L3231 thru L3233 M3241 thru M3243 L3241 thru L3243 VOLTAGE CONTROLLED OSCILLATORS HCMOS, 0° TO 70°C HALF SIZE D.I.L. H3201 H3221 H3231 H3241 Tristate VCXOs
|
Original
|
PDF
|
M3201
M3207
L3201
L3207
M3221
M3223
L3221
L3223
M3231
M3233
M3202
M3206
H3205
L3231
M3233
M3243
H3202
H3206
|
M3202
Abstract: M3201 M3221 M3207 M3243 M3206 H330-2 M3203 M3223 M3241
Text: VOLTAGE CONTROLLED CRYSTAL OSCILLATORS HCMOS/TTL 5V Thru-Hole / Gull Wing FEATURES • Guaranteed Capture Range of ±50 ppm • Excellent incrememtal and best-straight-line linearity • Start-up time is less than 5ms • Each unit is ATE-tested to guarantee full compliance with all electrical specifications
|
Original
|
PDF
|
Pin14.
H3207
H3223
H3233
M3201
M3202
M3201
M3221
M3207
M3243
M3206
H330-2
M3203
M3223
M3241
|
|
|
Untitled
Abstract: No abstract text available
Text: Der Weltweit Führende Experte für Halbleiter-Schalttechnologie Halbleiter-Antriebssteuerung Crydom ist die weltweit führende Marke für Halbleiter-Schalttechnologie. Traditionell erfolgte die Steuerung in Anwendungen für Halbleiterrelais und Halbleiter-Schaltschütze primär über induktive Lasten. In jüngster Zeit
|
Original
|
PDF
|
|
KD510
Abstract: 2SK319 2SK320
Text: HI T A C H I /{ OPTO EL ECTRO NI CS > "44962Ö5 H I T A C H I / OPTOELECTRONICS! 73 DE I 44c][3205 mOlOOlM - • 73C 10014 D 2SK319,2SK320 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance.
|
OCR Scan
|
PDF
|
2SK319
2SK320
449620b'
2SK319,
KD510
2SK320
|
2SK1255
Abstract: 2SK125
Text: Power F-MOS FET 2SK1255 2SK1255 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • L ow ON re s is ta n c e R DS on : R DS (on) 1 = 0 .1 3 5 A (ty p .) Unit: mm • H igh sw itch in g r a te : t ( = 5 3 n s (ty p .) • No se c o n d a ry b reak d o w n
|
OCR Scan
|
PDF
|
2SK1255
2SK1255
2SK125
|
S7190A
Abstract: SI 3205
Text: S-7190A 64-bit THERMAL HEAD DRIVER The S-7190A is a thermal print head driver, consisting of a CMOS 64-bit shift reg iste r with s e ria l input and serial/parallel output, a C M O S 64-bit latch and 64 Nch opendrain drivers. It directly drives a thin film or a thick
|
OCR Scan
|
PDF
|
S-7190A
64-bit
S-7190A
DDG301fi
S7190A
SI 3205
|
EFOEC
Abstract: EFOGC4004A4 4069UB panasonic ceramic resonator PANASONIC
Text: Ceramic Resonators Leaded Built-In Capacitors EFO-EC/GC Series Features • Wide range of oscillation frequency: 3.58 to 35 MHz. • No need of capacitors in oscillation circuit • High accuracy, high stability Initial frequency tolerance: 60.5 % • Excellent temperature characteristics
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Ceramic Resonators Leaded EFO-EN/GN Features • Wide range of oscillation frequency: 3.58 to 35 MHz. • High accuracy, high stability • Initial frequency tolerance: ±0.5 % • Saves height on P.C.-board Height: 5 mm max. • Taped version is available for automatic insertion.
|
OCR Scan
|
PDF
|
|
2n4405
Abstract: 2n4404 2N4404 MOTOROLA 2n4405 motorola
Text: MOTOROLA SC XSTRS/R 1EE 0 I F L3b725«4 GüôbMia 'i | T-33-n 2N4404 2N4405 M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage v CEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage Ve b o 5.0 Vdc Rating Collector Current — Continuous
|
OCR Scan
|
PDF
|
L3b725
2N4404
2N4405
T-33-n
O-205AD)
2n4405
2N4404 MOTOROLA
2n4405 motorola
|
LA 3660
Abstract: 32-bit shift register DST1
Text: S-7180A 32-bit THERMAL HEAD DRIVER The S-7180A is a thermal print head driver, consisting of a CMOS 32-bit shift re g iste r with s e ria l input and serial/parallel output, a C M O S 32-bit latch and 32 Nch opendrain drivers. It directly drives a thin film or a thick
|
OCR Scan
|
PDF
|
S-7180A
32-bit
S-7180A
A123443
LA 3660
32-bit shift register
DST1
|
transistor b764
Abstract: c2314 transistor transistor b985 transistor D1207 B892 transistor b892 c2314 D1111 TRANSISTOR C3117 TRANSISTOR d879 transistor
Text: SA ßfO PCP Power Chip Pack Transistor Series C a F" & a t u i - s * V e r y sm all s i z e making i t p o s s i b l e to p ro v id e h ig h - d e n s ity , s m a lI - s i z e d h y b rid lCs. * V a r io u s p a c k in g of d e v ic e s a r e a v a i la b l e to meet a u to m atic
|
OCR Scan
|
PDF
|
250mm
DCH10
2SA1882/2SC4984
1118/2SD1618
C3775
2SC5415
2SA1575/2SC4080
2SA1724
2SC4504
A1406/C3600
transistor b764
c2314 transistor
transistor b985
transistor D1207
B892
transistor b892
c2314
D1111 TRANSISTOR
C3117 TRANSISTOR
d879 transistor
|
gaas fet micro-X Package marking
Abstract: INFINEON DIODE BAS 70 infineon radar BFY420 GaAs Amplifier Micro-X Marking N
Text: GaAs Components Infineon ?0í^nü!og¡«» HiRel Discretes and Microwave Semiconductors 11.1 Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Infineon. Full data sheets are also given in our HiRel Discrete and
|
OCR Scan
|
PDF
|
|
