EDI8F8257C70BPC
Abstract: No abstract text available
Text: ^EDI ELECTRONIC DESIGNS INC SIE D • 323D114 B*cfronlc D*ägn$ Ine. ■ ODOIO LL bS3 BELD EDI8F8257C T-W-23-/V Commercial Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8F8257C is a 2 megabit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi
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3HBD114
EDI8F8257C
256Kx8
EDI8F8257C
123Kx8
the128Kx8
The32
EDI8F8257LP)
EDI8F8257C70BPC
EDI8F8257C85BPC
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uA 726 HC
Abstract: IC00030
Text: 323 011 4 ELECTRONIC DESIGNS INC_ 71C 0 0026 7 ELE CTR ON IC DESIGNS INC 71 D e | 323D114 GDDGQBt. 7 | Electronic Designs Inc. EDH5832-30/35/45 32K x 8 EEPROM T he EDH5832 is an e le ctrica lly erasable, p ro gra m m a ble rea d-o nly m e m o ry EEPRO M w ith ea se -o f-u se features. EEPRO M can be m od ifie d using sim p le T T L level
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EDH5832-30/35/45
EDH5832
TELEX-858325
uA 726 HC
IC00030
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0Q8-DQ11
Abstract: doso D012 D015 D024 DO30 EDI8M3264C C0013
Text: 30E D ELECTRON IC DESIGNS INC • 323D114 GOQGhTS b ■ EDI8M3264C m o i EUctronlo Dytlgnt In c .- High Speed Two Megabit SRAM Module DiFûilÂ?D i 64Kx32 Static RAM CMOS, High Speed Module T-M -Z3-N Features The EDI8M3264C is a high speed 2 megabit Static
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EDI8M3264C
64Kx32
EDI8M3264C
64Kx4
002ft
A0-A15
0Q8-DQ11
DQ16-DQ19
24-DQ27
doso
D012
D015
D024
DO30
C0013
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Untitled
Abstract: No abstract text available
Text: EDI8F321024C Electronic Designs Inc. High Speed 32 Megabit SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 1024Kx32 bit CMOS Static Random Access Memory
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EDI8F321024C
1024Kx32
EDI8F321024C
1024K
1024Kx4
EDI8F321024C35MZC
EDI8F321024C45MZC
323D114
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Untitled
Abstract: No abstract text available
Text: W D EDI5M32128C I ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128Kx32 CMOS ] l fl[ EEPROM Module Features The EDI5M32128C is a high speed, high perform ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8
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EDI5M32128C
128Kx32
EDI5M32128C
128Kx8
1b-10
020x45Â
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Untitled
Abstract: No abstract text available
Text: M D \ ELECTRONIC QE9GN& N C . EDI7P16xxxA TA/CF A Features General Description Type II, Type 111 and Compact Flash packaging ATA Flash PC Cards Densities from 2MB to 220MB EDI's ATA Flash Memory PC Card series offers a full • Compact Flash - 2MB to 24MB
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EDI7P16xxxA
220MB
110MB
car04
EDI7P16xxxATA00Z
EDI7P16xxxCFA00Z
175MB
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Untitled
Abstract: No abstract text available
Text: _ EDI7F82048C ^E D I Electronic Designs Inc. High Performance Sixteen Megabit Flash EEPROM 2Megx8 CMOS Flash EEPROM Module Features The EDI7F82048C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains sixteen 128Kx8 Flash
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EDI7F82048C
EDI7F82048C
128Kx8
A17-A20
Q01fl34
EDI7F82048C120BSC
EDI7F82048C150BSC
EDI7F82048C200BSC
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Untitled
Abstract: No abstract text available
Text: HEDI EDI8F16256C ELECTRONIC DESIGNS INC., High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmabie, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in j-leaded (SOJ) chip carriers surface-mounted
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EDI8F16256C
256Kx16
EDI8F16256C
4096K-bit
256Kx4
a256Kx16,
512Kx8
1024Kx4
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Untitled
Abstract: No abstract text available
Text: WDI E D I7 F 3 3 IM C 32Megabit CMOS ELECTRONIC 0E9GNS INC. 5.0 Volt-only Sector Erase Flash Memory Module 1Megx32 Flash Module Features 5.0 Volt ±10% for read and write operations The EDI7F33IMC is an 32Mbit 5.0 volt-only Flash memory organized as a 1Megx32. The memory is divided into 16
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32Megabit
1Megx32
EDI7F33IMC
32Mbit
1Megx32.
100ns
01581USA
0G0S57Ã
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Untitled
Abstract: No abstract text available
Text: E L E C T R O N I C D E S I G N S I N C 71 3 2 3 D 1 1 4 □ □ □ □ □ 3 4 b T ' 13 " 2 7 EDH 51664-35/45 MILITARY 64K x 16 EEPROM ELECTRONIC DESIGNS INC. PINOUTS VSS A7 A8 A9 T h e 5 1 6 6 4 is a f u l l y b u f f e r e d 1M b i t E E P R O M m o d u l e c o n s i s t i n g
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8F32512C Electronic Designs Inc. High Speed Sixteen Megabit SRAM Module 512Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32512C is a high speed 16 megabit Static RAM module organized as 512K words by 32 bits. This module is constructed from four 512Kx8 Static RAMs in
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EDI8F32512C
512Kx32
EDI8F32512C
512Kx8
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Untitled
Abstract: No abstract text available
Text: EDI8F64128C ^ E D I 128KX64 SRAM Module ELECTRONIC D£StGN& NC.I 128KX64 Static RAM High Speed CMOS Cache Module Features 1 M Byte Secondary C ach e Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based System s
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EDI8F64128C
128KX64
EDI8F64128C
128Kx8
EDI8F64128C15MDC
EDI8F64128C20MDC
EDI8F64128C25MDC
01581USA
EDBF864128C
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Untitled
Abstract: No abstract text available
Text: EDI8F32123C ^ E D I ELECTRONIC DESIGNS, N C .I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup 128Kx32 Static RAM CMOS, High Speed Module The EDI8F32123C is a 4 megabit Battery Backed SRAM
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EDI8F32123C
128Kx32
EDI8F32123C
128Kx
128Kx8
EDI8F32123C70MMC
EDI8F32123C85MMC
EDBF32123C
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Untitled
Abstract: No abstract text available
Text: ^EDI EDÌ8L32512C ELECTRONIC DESIGNS INC.- High Performance 16 Megabit SRAM 512Kx32 CMOS High Speed Static RAM A W M O l D iF @ [R s i^ \T [ i Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit
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8L32512C
512Kx32
EDI8L32512C
1Mx16
EDI8L32512C,
EDI8L32512C15AC
EDI8L32512C17AC
EDI8L32512C20AC
EDI8L32512C25AC
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RASH
Abstract: EDI7F33IMC EDI7F33IMC100BNC EDI7F33IMC120BNC EDI7F33IMC150BNC
Text: E D I7F33IM C W D I 32Megabit CMOS ELECTRONIC 0E9GNS INC. 5.0 Volt-only Sector Erase Flash Memory Module 1Megx32 Flash Module Features 5.0 Volt ±10% for read and write operations The EDI7F33IMC is an 32Mbit 5.0 volt-only Flash memory organized as a 1Megx32. The memory is divided into 16
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64Kbytes
01581USA
0G0S57fl
ED17F33Ã
RASH
EDI7F33IMC
EDI7F33IMC100BNC
EDI7F33IMC120BNC
EDI7F33IMC150BNC
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WA126
Abstract: GA-311
Text: ^ E D EDI9F81025C I e le c tro n s : designs, n c .1 2x512Kx8 SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on 2x512Kx8 bit CMOS Static two 512Kx8 Static RAMs mounted on a multi-layered epoxy Random Access Memory
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EDI9F81025C
2x512Kx8
100ns
EDI9F81025LP)
EDI9F81025C
512Kx8
WA126
GA-311
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TME 57
Abstract: DQ131 45VCci a81s DQ111 A5173
Text: m EDI9F232256BC 1 2x256Kx32 SRAM Module x ELECTRONIC DESIGNI N C. 2x256Kx32 Static RAM CMOS, High SpeedModule Features The EDI9F232256B is a high speed 16 megabit Static RAM module organized as 2x256K words by 32 bits. This module is constructed from sixteen 256Kx4 Static RAMs in SOJ
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EDI9F232256BC
2x256Kx32
EDI9F232256B
2x256K
256Kx4
2322568RW
TME 57
DQ131
45VCci
a81s
DQ111
A5173
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256kx1
Abstract: EDI81256C45QB EDI81256C45LB EDI81256C55QB EDI81256C
Text: ^EDI _ EDI81256C Electronic Designs Inci High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. Fully asynchronous, the EDI81256C requires no
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EDI81256C
256Kx1
EDI81256C
256Kx1.
EDI81256LP,
MIL-STD-883,
Q-74Q
EDI81256C45QB
EDI81256C45LB
EDI81256C55QB
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Untitled
Abstract: No abstract text available
Text: EDI7F81024C ELECTRONIC DESIGNS IN C .- High Performance Eight Megabit Flash EEPROM 1Megx8 CMOS Flash EEPROM Module Features The ED17F81024C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains eight 128Kx8 Flash Memo
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EDI7F81024C
ED17F81024C
128Kx8
EDI7F81024C
A17-A19
3D114
01fl23
EDI7F81024C120BSC
EDI7F81024C150BSC
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256KX16
Abstract: t1is I-D014 x313 dab circuitry RSV40
Text: ELECTRONIC DESIGNS INC m o i Electronic D t d g n s Inc« S1E J> • 3230114 DD01P7S 711 M E L D _EDI8M16256C High Speed 4 Megabit SRAM Module 256KX16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M16256C is a 4096K-bit high speed CMOS
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EDI8M16256C
256KX16
EDI8M16256C
4096K-bit
256Kx1
256Kx4
512Kx8
1024Kx4
t1is
I-D014
x313
dab circuitry
RSV40
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zd 501
Abstract: D044 z DD54 TME 57 Z3A18 55ZJ
Text: ^ ED I EDI8F64128C ELECTRONIC D£StGN& NC.I 128KX64 SRAM Module 128KX64 Static RAM High Speed CMOS Cache Module Features 1MByte Secondary Cache Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based
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EDI8F64128C
128Kx64
66MHz
CELP2X80CS3Z48
EDI8F64128C
EDI8F64128C20MDC
EDI8F64128C25MDC
01581USA
3S3D114
zd 501
D044 z
DD54
TME 57
Z3A18
55ZJ
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9CTI
Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Text: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density
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ED1784MS
250ns
EDI784MSV
EDI784MSV50BB
EDI784MSV50FB
EDI784MSV50B8
EDI784MSV506C
24/32Pin
300MN
3530im
9CTI
S28B
9CTI 10 pin ic
EC017
EDJ7
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Flash SIMM 80 programmer
Abstract: GTO MODULE RASH TME 57 473745 A1-A16-V
Text: ^EDI EDI7F32128C ELECTRONIC 0E9GN& NC.I 128Kx32 Flash Module 128Kx32 Flash Module Features 128Kx32 C M O S Flash Module The E D I Flash Family is a five-volt-only in system Flash program Fast R ead A c c e ss Time-100ns mable and eraseable read only memory module. The modules are
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EDI7F32128C
128Kx32
Time-100ns
Time-10ms
EDI7F32128C100BNC
EDI7F32128C120BNC
EDI7F32128C150BNC
EDI7F32128C1OOBAC
Flash SIMM 80 programmer
GTO MODULE
RASH
TME 57
473745
A1-A16-V
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EDI88512CA20NB
Abstract: EDI88512CA45 and45ns TM315
Text: EDI88512CA m o \ ELECTRONIC D ESG N S INC. Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic r a The 32 pin DIP pinout adheres to the JEDEC evolu tionary standard for the four megabit device and is a replacement for the 512K x 8 module, EDI8M8512C. All
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EDI88512CA
512Kx8
EDI88512CA
EDI8M8512C.
EDI88128CS.
EDI88512CA20NB
EDI88512CA45
and45ns
TM315
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