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    EDI8F8257C70BPC

    Abstract: No abstract text available
    Text: ^EDI ELECTRONIC DESIGNS INC SIE D • 323D114 B*cfronlc D*ägn$ Ine. ■ ODOIO LL bS3 BELD EDI8F8257C T-W-23-/V Commercial Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8F8257C is a 2 megabit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­


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    PDF 3HBD114 EDI8F8257C 256Kx8 EDI8F8257C 123Kx8 the128Kx8 The32 EDI8F8257LP) EDI8F8257C70BPC EDI8F8257C85BPC

    uA 726 HC

    Abstract: IC00030
    Text: 323 011 4 ELECTRONIC DESIGNS INC_ 71C 0 0026 7 ELE CTR ON IC DESIGNS INC 71 D e | 323D114 GDDGQBt. 7 | Electronic Designs Inc. EDH5832-30/35/45 32K x 8 EEPROM T he EDH5832 is an e le ctrica lly erasable, p ro gra m m a ble rea d-o nly m e m o ry EEPRO M w ith ea se -o f-u se features. EEPRO M can be m od ifie d using sim p le T T L level


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    PDF EDH5832-30/35/45 EDH5832 TELEX-858325 uA 726 HC IC00030

    0Q8-DQ11

    Abstract: doso D012 D015 D024 DO30 EDI8M3264C C0013
    Text: 30E D ELECTRON IC DESIGNS INC • 323D114 GOQGhTS b ■ EDI8M3264C m o i EUctronlo Dytlgnt In c .- High Speed Two Megabit SRAM Module DiFûilÂ?D i 64Kx32 Static RAM CMOS, High Speed Module T-M -Z3-N Features The EDI8M3264C is a high speed 2 megabit Static


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    PDF EDI8M3264C 64Kx32 EDI8M3264C 64Kx4 002ft A0-A15 0Q8-DQ11 DQ16-DQ19 24-DQ27 doso D012 D015 D024 DO30 C0013

    Untitled

    Abstract: No abstract text available
    Text: EDI8F321024C Electronic Designs Inc. High Speed 32 Megabit SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 1024Kx32 bit CMOS Static Random Access Memory


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    PDF EDI8F321024C 1024Kx32 EDI8F321024C 1024K 1024Kx4 EDI8F321024C35MZC EDI8F321024C45MZC 323D114

    Untitled

    Abstract: No abstract text available
    Text: W D EDI5M32128C I ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128Kx32 CMOS ] l fl[ EEPROM Module Features The EDI5M32128C is a high speed, high perform­ ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8


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    PDF EDI5M32128C 128Kx32 EDI5M32128C 128Kx8 1b-10 020x45Â

    Untitled

    Abstract: No abstract text available
    Text: M D \ ELECTRONIC QE9GN& N C . EDI7P16xxxA TA/CF A Features General Description Type II, Type 111 and Compact Flash packaging ATA Flash PC Cards Densities from 2MB to 220MB EDI's ATA Flash Memory PC Card series offers a full • Compact Flash - 2MB to 24MB


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    PDF EDI7P16xxxA 220MB 110MB car04 EDI7P16xxxATA00Z EDI7P16xxxCFA00Z 175MB

    Untitled

    Abstract: No abstract text available
    Text: _ EDI7F82048C ^E D I Electronic Designs Inc. High Performance Sixteen Megabit Flash EEPROM 2Megx8 CMOS Flash EEPROM Module Features The EDI7F82048C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains sixteen 128Kx8 Flash


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    PDF EDI7F82048C EDI7F82048C 128Kx8 A17-A20 Q01fl34 EDI7F82048C120BSC EDI7F82048C150BSC EDI7F82048C200BSC

    Untitled

    Abstract: No abstract text available
    Text: HEDI EDI8F16256C ELECTRONIC DESIGNS INC., High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmabie, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in j-leaded (SOJ) chip carriers surface-mounted


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    PDF EDI8F16256C 256Kx16 EDI8F16256C 4096K-bit 256Kx4 a256Kx16, 512Kx8 1024Kx4

    Untitled

    Abstract: No abstract text available
    Text: WDI E D I7 F 3 3 IM C 32Megabit CMOS ELECTRONIC 0E9GNS INC. 5.0 Volt-only Sector Erase Flash Memory Module 1Megx32 Flash Module Features 5.0 Volt ±10% for read and write operations The EDI7F33IMC is an 32Mbit 5.0 volt-only Flash memory organized as a 1Megx32. The memory is divided into 16


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    PDF 32Megabit 1Megx32 EDI7F33IMC 32Mbit 1Megx32. 100ns 01581USA 0G0S57Ã

    Untitled

    Abstract: No abstract text available
    Text: E L E C T R O N I C D E S I G N S I N C 71 3 2 3 D 1 1 4 □ □ □ □ □ 3 4 b T ' 13 " 2 7 EDH 51664-35/45 MILITARY 64K x 16 EEPROM ELECTRONIC DESIGNS INC. PINOUTS VSS A7 A8 A9 T h e 5 1 6 6 4 is a f u l l y b u f f e r e d 1M b i t E E P R O M m o d u l e c o n s i s t i n g


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8F32512C Electronic Designs Inc. High Speed Sixteen Megabit SRAM Module 512Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32512C is a high speed 16 megabit Static RAM module organized as 512K words by 32 bits. This module is constructed from four 512Kx8 Static RAMs in


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    PDF EDI8F32512C 512Kx32 EDI8F32512C 512Kx8

    Untitled

    Abstract: No abstract text available
    Text: EDI8F64128C ^ E D I 128KX64 SRAM Module ELECTRONIC D£StGN& NC.I 128KX64 Static RAM High Speed CMOS Cache Module Features 1 M Byte Secondary C ach e Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based System s


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    PDF EDI8F64128C 128KX64 EDI8F64128C 128Kx8 EDI8F64128C15MDC EDI8F64128C20MDC EDI8F64128C25MDC 01581USA EDBF864128C

    Untitled

    Abstract: No abstract text available
    Text: EDI8F32123C ^ E D I ELECTRONIC DESIGNS, N C .I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup 128Kx32 Static RAM CMOS, High Speed Module The EDI8F32123C is a 4 megabit Battery Backed SRAM


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    PDF EDI8F32123C 128Kx32 EDI8F32123C 128Kx 128Kx8 EDI8F32123C70MMC EDI8F32123C85MMC EDBF32123C

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDÌ8L32512C ELECTRONIC DESIGNS INC.- High Performance 16 Megabit SRAM 512Kx32 CMOS High Speed Static RAM A W M O l D iF @ [R s i^ \T [ i Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit


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    PDF 8L32512C 512Kx32 EDI8L32512C 1Mx16 EDI8L32512C, EDI8L32512C15AC EDI8L32512C17AC EDI8L32512C20AC EDI8L32512C25AC

    RASH

    Abstract: EDI7F33IMC EDI7F33IMC100BNC EDI7F33IMC120BNC EDI7F33IMC150BNC
    Text: E D I7F33IM C W D I 32Megabit CMOS ELECTRONIC 0E9GNS INC. 5.0 Volt-only Sector Erase Flash Memory Module 1Megx32 Flash Module Features 5.0 Volt ±10% for read and write operations The EDI7F33IMC is an 32Mbit 5.0 volt-only Flash memory organized as a 1Megx32. The memory is divided into 16


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    PDF 64Kbytes 01581USA 0G0S57fl ED17F33Ã RASH EDI7F33IMC EDI7F33IMC100BNC EDI7F33IMC120BNC EDI7F33IMC150BNC

    WA126

    Abstract: GA-311
    Text: ^ E D EDI9F81025C I e le c tro n s : designs, n c .1 2x512Kx8 SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on 2x512Kx8 bit CMOS Static two 512Kx8 Static RAMs mounted on a multi-layered epoxy Random Access Memory


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    PDF EDI9F81025C 2x512Kx8 100ns EDI9F81025LP) EDI9F81025C 512Kx8 WA126 GA-311

    TME 57

    Abstract: DQ131 45VCci a81s DQ111 A5173
    Text: m EDI9F232256BC 1 2x256Kx32 SRAM Module x ELECTRONIC DESIGNI N C. 2x256Kx32 Static RAM CMOS, High SpeedModule Features The EDI9F232256B is a high speed 16 megabit Static RAM module organized as 2x256K words by 32 bits. This module is constructed from sixteen 256Kx4 Static RAMs in SOJ


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    PDF EDI9F232256BC 2x256Kx32 EDI9F232256B 2x256K 256Kx4 2322568RW TME 57 DQ131 45VCci a81s DQ111 A5173

    256kx1

    Abstract: EDI81256C45QB EDI81256C45LB EDI81256C55QB EDI81256C
    Text: ^EDI _ EDI81256C Electronic Designs Inci High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. Fully asynchronous, the EDI81256C requires no


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    PDF EDI81256C 256Kx1 EDI81256C 256Kx1. EDI81256LP, MIL-STD-883, Q-74Q EDI81256C45QB EDI81256C45LB EDI81256C55QB

    Untitled

    Abstract: No abstract text available
    Text: EDI7F81024C ELECTRONIC DESIGNS IN C .- High Performance Eight Megabit Flash EEPROM 1Megx8 CMOS Flash EEPROM Module Features The ED17F81024C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains eight 128Kx8 Flash Memo­


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    PDF EDI7F81024C ED17F81024C 128Kx8 EDI7F81024C A17-A19 3D114 01fl23 EDI7F81024C120BSC EDI7F81024C150BSC

    256KX16

    Abstract: t1is I-D014 x313 dab circuitry RSV40
    Text: ELECTRONIC DESIGNS INC m o i Electronic D t d g n s Inc« S1E J> • 3230114 DD01P7S 711 M E L D _EDI8M16256C High Speed 4 Megabit SRAM Module 256KX16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M16256C is a 4096K-bit high speed CMOS


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    PDF EDI8M16256C 256KX16 EDI8M16256C 4096K-bit 256Kx1 256Kx4 512Kx8 1024Kx4 t1is I-D014 x313 dab circuitry RSV40

    zd 501

    Abstract: D044 z DD54 TME 57 Z3A18 55ZJ
    Text: ^ ED I EDI8F64128C ELECTRONIC D£StGN& NC.I 128KX64 SRAM Module 128KX64 Static RAM High Speed CMOS Cache Module Features 1MByte Secondary Cache Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based


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    PDF EDI8F64128C 128Kx64 66MHz CELP2X80CS3Z48 EDI8F64128C EDI8F64128C20MDC EDI8F64128C25MDC 01581USA 3S3D114 zd 501 D044 z DD54 TME 57 Z3A18 55ZJ

    9CTI

    Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
    Text: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density


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    PDF ED1784MS 250ns EDI784MSV EDI784MSV50BB EDI784MSV50FB EDI784MSV50B8 EDI784MSV506C 24/32Pin 300MN 3530im 9CTI S28B 9CTI 10 pin ic EC017 EDJ7

    Flash SIMM 80 programmer

    Abstract: GTO MODULE RASH TME 57 473745 A1-A16-V
    Text: ^EDI EDI7F32128C ELECTRONIC 0E9GN& NC.I 128Kx32 Flash Module 128Kx32 Flash Module Features 128Kx32 C M O S Flash Module The E D I Flash Family is a five-volt-only in system Flash program­ Fast R ead A c c e ss Time-100ns mable and eraseable read only memory module. The modules are


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    PDF EDI7F32128C 128Kx32 Time-100ns Time-10ms EDI7F32128C100BNC EDI7F32128C120BNC EDI7F32128C150BNC EDI7F32128C1OOBAC Flash SIMM 80 programmer GTO MODULE RASH TME 57 473745 A1-A16-V

    EDI88512CA20NB

    Abstract: EDI88512CA45 and45ns TM315
    Text: EDI88512CA m o \ ELECTRONIC D ESG N S INC. Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic r a The 32 pin DIP pinout adheres to the JEDEC evolu­ tionary standard for the four megabit device and is a replacement for the 512K x 8 module, EDI8M8512C. All


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    PDF EDI88512CA 512Kx8 EDI88512CA EDI8M8512C. EDI88128CS. EDI88512CA20NB EDI88512CA45 and45ns TM315