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Fanstel Corporation ESP32E16 RF TXRX MOD BLUETOOTH U.FL SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ESP32E16	Cut Tape			1	1 $12.43 10 $9.642 100 $7.8178 1000 $7.2916 10000 $7.2916	Buy Now
	ESP32E16	Digi-Reel			1	1 $12.43 10 $9.642 100 $7.8178 1000 $7.2916 10000 $7.2916	Buy Now
	ESP32E16	Reel			700	1 - 10 - 100 - 1000 $6.80527 10000 $6.53088	Buy Now
Symmetry Electronics	ESP32E16				1	1 $7.16 10 $7.16 100 $7.16 1000 $7.16 10000 $7.16	Buy Now
CTS Corporation 445I32E16M00000 CRYSTAL 16.0000MHZ 20PF SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	445I32E16M00000	Reel			1,000	1 - 10 - 100 - 1000 $0.519 10000 $0.519	Buy Now
Avnet Americas	445I32E16M00000	Reel		8 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	445I32E16M00000					1 $0.76 10 $0.67 100 $0.553 1000 $0.436 10000 $0.411	Get Quote
Avnet Abacus	445I32E16M00000	Reel		10 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
CTS Corporation 445W32E16M00000 CRYSTAL 16.0000MHZ 20PF SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	445W32E16M00000	Reel			1,000	1 - 10 - 100 - 1000 $0.46824 10000 $0.46824	Buy Now
Avnet Americas	445W32E16M00000	Reel		8 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	445W32E16M00000					1 $0.68 10 $0.596 100 $0.493 1000 $0.388 10000 $0.349	Get Quote
Avnet Abacus	445W32E16M00000	Reel		10 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
CTS Corporation 445A32E16M00000 CRYSTAL 16.0000MHZ 20PF SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	445A32E16M00000	Reel			1,000	1 - 10 - 100 - 1000 $0.46824 10000 $0.46824	Buy Now
Avnet Americas	445A32E16M00000	Reel		8 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	445A32E16M00000					1 $0.68 10 $0.596 100 $0.493 1000 $0.388 10000 $0.366	Get Quote
Avnet Abacus	445A32E16M00000	Reel		10 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
CTS Corporation 445C32E16M00000 CRYSTAL 16.0000MHZ 20PF SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	445C32E16M00000	Reel			1,000	1 - 10 - 100 - 1000 $0.46824 10000 $0.46824	Buy Now
Avnet Americas	445C32E16M00000	Reel		8 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	445C32E16M00000					1 $0.68 10 $0.596 100 $0.493 1000 $0.388 10000 $0.366	Get Quote
Avnet Abacus	445C32E16M00000	Reel		10 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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32E16 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ne85630 Abstract: 32E-16 Text: NONLINEAR MODEL SCHEMATIC NE85630 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units IS 6e-16 MJC 0.55 time seconds BF 120 XCJC 0.3 capacitance farads	Original	PDF	NE85630 6e-16 32e-16 96e-4 8e-12 1e-12 10e-12 NE85630 09e-12 16e-12
transistor Bf 444 Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: \|S21E\|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA	Original	PDF	UPA801T NE856 100mA UPA801T 24-Hour transistor Bf 444 LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN S21E UPA801T-T1
LB 122 transistor To-92 Abstract: NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)	Original	PDF	NE856 NE85600 24-Hour LB 122 transistor To-92 NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635
transistor NEC D 882 p Abstract: transistor c 1349 Transistor BF 479 NE85630-T1-A Text: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP	Original	PDF	NE856 transistor NEC D 882 p transistor c 1349 Transistor BF 479 NE85630-T1-A
LB 1639 Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236 Text: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz	Original	PDF	UPA801T NE856 100mA UPA801T 24-Hour LB 1639 transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
LB 1639 Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: \|S21E\|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA	Original	PDF	UPA801T NE856 100mA UPA801T LB 1639 BF 830 transistor UPA801T-T1-A S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
BJT BF 331 Abstract: NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85600 NE85618 NE85619 NE85630 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)	Original	PDF	NE856 NE85600 24-Hour BJT BF 331 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85600 NE85618 NE85619 NE85630
NE85633 Abstract: No abstract text available Text: NONLINEAR MODEL NE85633 SCHEMATIC CCBPKG Q1 CCB LCX LBX Collector LB Base CCE CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units IS 6e-16 MJC 0.55 time seconds BF 120 XCJC 0.3 capacitance farads	Original	PDF	NE85633 6e-16 32e-16 96e-4 8e-12 1e-12 15e-12 56e-18 NE85633 09e-12
973-120 Abstract: 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006 Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST	Original	PDF	NE856 NE856 NE85632 NE85633-T1B NE85634-T1 NE85635 NE85639-T1 NE85639R-T1 973-120 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006
ne85635 Abstract: NE85635/CEL Text: NONLINEAR MODEL NE85635 SCHEMATIC CCB_PKG Q1 0.05pF 0.09pF CCB RB_PKG LB_PKG LB 0.15nH 0.77nH LC 0.45nH 68100 RC_PKG COLLECTOR 0.1 ohms CCE 0.16pF BASE 0.1 ohms LC_PKG 0.15nH CCE_PKG 0.2pF LE_PKG 0.23nH CBE_PKG 0.05pF RE_PKG 0.1 ohms CBEX_PKG CCEX_PKG 0.2pF	Original	PDF	NE85635 6e-16 32e-16 96e-4 8e-12 1e-12 10e-12 24-Hour ne85635 NE85635/CEL
016p Abstract: NE85633-T1B-A NEC NE85635 transistor NEC b 882 p NEC 2501 LE 737 NE85600 mje 1303 NE AND micro-X 2SC5006 2SC5011 Text: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP	Original	PDF	NE856 016p NE85633-T1B-A NEC NE85635 transistor NEC b 882 p NEC 2501 LE 737 NE85600 mje 1303 NE AND micro-X 2SC5006 2SC5011
MJE 1532 Abstract: transistor bf 760 sot-89 Marking LB 931 NE85630 NE85635 packaging schematic NE AND micro-X NEC NE85635 2SC4226 2SC5006 2SC5011 Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST	Original	PDF	NE856 NE856 NE85632 NE85633-T1B NE85634-T1 NE85635 NE85639-T1 NE85639R-T1 MJE 1532 transistor bf 760 sot-89 Marking LB 931 NE85630 NE85635 packaging schematic NE AND micro-X NEC NE85635 2SC4226 2SC5006 2SC5011
transistors ON 4673 Abstract: NE685 NE68530 NE856 NE85630 S21E UPA832TF UPA835TF UPA835TF-T1 pin IC 7479 Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA Package Outline TS06 (Top View) 2.1 ± 0.1 Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA	Original	PDF	UPA835TF NE685, NE856) UPA835TF UPA835TF-T1 NE68530 NE85630 UPA832TF 24-Hour transistors ON 4673 NE685 NE68530 NE856 NE85630 S21E UPA835TF-T1 pin IC 7479
NE856 Abstract: 2sc3355 Micro-X Marking 865 NE AND micro-X NE85632 NEC NE85635 2SC4226 2SC5006 2SC5011 NE85600 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST rs e	Original	PDF	NE856 NE856 2sc3355 Micro-X Marking 865 NE AND micro-X NE85632 NEC NE85635 2SC4226 2SC5006 2SC5011 NE85600

UPA801T Abstract: No abstract text available Text: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1, Q2 Parameters Q1, Q2 IS 6e-16 MJC 0.55 BF 120 XCJC 0.3 NF 0.98 CJS VAF 10 VJS 0.75 IKF 0.08 MJS ISE 32e-16 FC 0.5 NE 1.93 TF 12e-12 BR 12 XTF 6 NR 0.991 VTF 10 0.2 VAR 3.9 ITF IKR 0.17 PTF ISC	Original	PDF	UPA801T 6e-16 32e-16 96e-4 8e-12 1e-12 12e-12 56e-18 24-Hour UPA801T
Untitled Abstract: No abstract text available Text: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 E1234567489ABCDEEFEFEEEEEEEEEEE E EEEEEEEE E E E1 123314567891A758BCD814E1F3D167D1F1C5A36 E !E"E#699 C$%&' E#699!E*B 1+,EBF!E-E%&EF	Original	PDF	1234567489ABCDEEF 123314567891A758BCD814E1F3 167D1 917189ABCD9E6F5 91E5B1 514D1B9D81 8D176 16AA3 112345623489AE% D91865717DA758BCD81
transistor NEC D 882 Abstract: 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST DESCRIPTION	OCR Scan	PDF	NE856 24-Hour transistor NEC D 882 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55
ka 2843 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA835TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: P a ckage O u tlin e TS06 Q1 :NF = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA 2.1 ± 0 .1 Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA	OCR Scan	PDF	UPA835TF NE685, NE856) NE68530 NE85630 UPA835TF-T1 24-Hour ka 2843
k 2611 transistor 3pin Abstract: tp 4058 kf 203 e 011 transistor PA835 Text: PRELIMINARY DATA SHEET UPA835TF NPN SILICON EPITAXIAL TWIN TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: P ackage O u tlin e TS06 (T o p View) Q1 :NF = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA	OCR Scan	PDF	UPA835TF NE685, NE856) NE68530 NE85630 UPA835TF-T1 24-Hour k 2611 transistor 3pin tp 4058 kf 203 e 011 transistor PA835
BA 5982 Abstract: 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 35 MICRO-X	OCR Scan	PDF	NE856 av3000 NE85639R-T1 BA 5982 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1

32E16 Search Results

32E16 Price and Stock

Fanstel Corporation ESP32E16

CTS Corporation 445I32E16M00000

CTS Corporation 445W32E16M00000

CTS Corporation 445A32E16M00000

CTS Corporation 445C32E16M00000

32E16 Datasheets Context Search

ne85630

transistor Bf 444

LB 122 transistor To-92

transistor NEC D 882 p

LB 1639

LB 1639

BJT BF 331

NE85633

973-120

ne85635

016p

MJE 1532

transistors ON 4673

NE856

UPA801T

Untitled

transistor NEC D 882

ka 2843

k 2611 transistor 3pin

BA 5982