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    32KXB Search Results

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    32KXB Price and Stock

    Vishay Vitramon VJ0603Y332KXBAC

    CAP CER 3300PF 100V X7R 0603
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    DigiKey VJ0603Y332KXBAC Cut Tape 45,040 1
    • 1 $0.3
    • 10 $0.193
    • 100 $0.1096
    • 1000 $0.07127
    • 10000 $0.07127
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    VJ0603Y332KXBAC Digi-Reel 45,040 1
    • 1 $0.3
    • 10 $0.193
    • 100 $0.1096
    • 1000 $0.07127
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    VJ0603Y332KXBAC Reel 44,000 4,000
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    • 10000 $0.05588
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    Vishay Vitramon GA0603Y332KXBAC31G

    CAP CER 3300PF 100V X7R 0603
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    DigiKey GA0603Y332KXBAC31G Cut Tape 8,000 1
    • 1 $0.19
    • 10 $0.109
    • 100 $0.0668
    • 1000 $0.04457
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    GA0603Y332KXBAC31G Digi-Reel 8,000 1
    • 1 $0.19
    • 10 $0.109
    • 100 $0.0668
    • 1000 $0.04457
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    GA0603Y332KXBAC31G Reel 8,000 4,000
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    Vishay Vitramon VJ0603Y332KXBCW1BC

    CAP CER 3300PF 100V X7R 0603
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    DigiKey VJ0603Y332KXBCW1BC Cut Tape 2,963 1
    • 1 $0.11
    • 10 $0.073
    • 100 $0.0342
    • 1000 $0.02091
    • 10000 $0.02091
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    VJ0603Y332KXBCW1BC Digi-Reel 2,963 1
    • 1 $0.11
    • 10 $0.073
    • 100 $0.0342
    • 1000 $0.02091
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    Syfer Technology 8060J2000332KXB

    MLC
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    DigiKey 8060J2000332KXB Bulk 500
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    • 1000 $28.07238
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    Syfer Technology 8060J3K00332KXB

    MLC
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    DigiKey 8060J3K00332KXB Bulk 500
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    32KXB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    32KxB

    Abstract: No abstract text available
    Text: '•HYUNDAI HY62255BSeries 32KxB-bit CMOS SHAM PRELIMINARY DESCRIPTION The HYB2256B is a high-speed, law power and 32.7BS x B-bils CMOS static RAM fabricated using Hyundai's high performance twin lub CMOS process technology. This high reliability process coupled with innovative circuit


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    PDF 62255BSeries 32KxB-bit HYB2256B HY52256B HY62256B CD4-11-MAY94 HY52256BP HYB2Z56BLP HY5ZZ56BLLP 32KxB

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 5.12 MEGABIT MEMORY MODULE RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (L#fl = 0.6 |im) • Read/Write Cycle Times <,17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad (Si02)


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    PDF HX84050 1x106 1x10s 200-Lead

    32KXB

    Abstract: No abstract text available
    Text: AEPSX256K8 STATIC RAM MODULE >> 262,144 x 8 Organization > > Double sided to maximize bit density > > Low 0.66 • stand-off height suited to 0.8" card spacing > > Completely Static operation > > TTL compatible > > Low power, battery back-up operation capability


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    PDF AEPSX256K8 32KxB

    Untitled

    Abstract: No abstract text available
    Text: HIG H-SPEED STATIC RAM O RGANIZED AS 3 2 K x 9 ADVANCE INFORMATION IDT 71259 FEATURES: DESCRIPTION: • High-speed address/chip select time The IDT71259 is a 294,912-bit high-speed static RAM organized as 32K x 9. It is fabricated using IDT’s high-performance high-reliability CEMOS technology. This state-of-the-art technology,


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    PDF IDT71259S IDT71259L 32-pin M1L-STD-883, IDT71259 912-bit DSC-7044/- 32KxB

    32kx8 sram

    Abstract: VSS115 32kxS
    Text: Honeywell Advance Information HC80820 256K X 8 RADIATION-TOLERANT SRAM FEATURES R A D IA TIO N OTHER • Total D ose Hardness at Tactical Level • S pare Mem ory Chip can be Substituted O n-The-Fly • Soft Error R ate of <1 x1 O'5 upsets/bit-day or <1 upset/module-day


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    PDF HC80820 PINOUR19 BADDR18 BADDR17 BADDR16 BADDR15 122-lead 32kx8 sram VSS115 32kxS

    HM6206

    Abstract: 32Kx64
    Text: SRAMs Cache Synchronous SRAMs P ackage P a rt N um b e r D e n i lt y O r g a n iz a tio n C y c le tim e / A c c e « » tim e (n e ) Max. Key F e a tu re LQ FP HM62C3232 1M 32K x32 9/10/12/15 Pipeline 100 HM62C3232FP-7 1M 32K x32 7 Pipeline 100 HM62C3232FP-8L


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    PDF HM62C3232 HM62C3232FP-7 HM62C3232FP-8L HM62D3232 HM62D3232FP-7 HM67B3632 HM67S3632 HB66C3264BA HB66D3264BA HB66C6464BA HM6206 32Kx64

    Untitled

    Abstract: No abstract text available
    Text: AEPSS128K16-FCT139 STATIC RAM MODULE >> 131,072 x 16 Organization > > High speed, High density 4 5 pin SIP > > Completely Static operation > > TTL com patible > > Low power, battery back-up operation capability > > Uses single + 5 V p o w er supply 128 KILOBYTES STATIC


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    PDF AEPSS128K16-FCT139 AEPSS128K16-FCT 32KX8 32KXB 74FCM38

    PE 8001A

    Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1


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    PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001

    D04005

    Abstract: by 028
    Text: AEPSX256K8 STATIC RAM MODULE > > 262,144 x 8 Organization > > Double sided to maximize bit density > > Low 0 .66 “ stand-off height suited to 0.8 " card spacing > > Completely Static operation > > TTL compatible > > Low power, battery back-up operation capability


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    PDF AEPSX256K8 32KxB D04005 by 028