Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    32MX16BIT Search Results

    32MX16BIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 J Micro-DIMM. The TS32MMQ64V5M consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board


    Original     		PDF 214PIN 256MB 32Mx16 TS32MMQ64V5M TS32MMQ64V5M 64bits DDR2-533 32Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: 172PIN DDR2 400 Micro-DIMM 512MB With 32Mx16 CL3 TS512MPA0512U Description Placement The TS512MPA0512U is a 64M x 64bits DDR2-400 Micro-DIMM. The TS512MPA0512U consists of 8pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 172-pin printed


    Original     		PDF 172PIN 512MB 32Mx16 TS512MPA0512U TS512MPA0512U 64bits DDR2-400 32Mx16bits 172-pin

    Untitled

    Abstract: No abstract text available
    Text: 172PIN DDR2 400 Micro-DIMM 256MB With 32Mx16 CL3 TS256MPA0256U Placement Description The TS256MPA0256U is a 32M x 64bits DDR2-400 Micro-DIMM. The TS256MPA0256U consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 172-pin printed


    Original     		PDF 172PIN 256MB 32Mx16 TS256MPA0256U TS256MPA0256U 64bits DDR2-400 32Mx16bits 172-pin

    HY27USXX121M

    Abstract: package tsop1 512MBIT hynix nand HY27US HY27 HY27SSXX121M
    Text: HY27SS 08/16 121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Sep.17.2003 Preliminary 0.1 Renewal Product Group


    Original     		PDF HY27SS HY27US 512Mbit 64Mx8bit 32Mx16bit) 512Mb HY27USXX121M package tsop1 512MBIT hynix nand HY27 HY27SSXX121M

    H5MS5162

    Abstract: H5MS5162DFR h5ms5162dfr-j3m hynix mcp DDR333 DDR370 DDR400
    Text: 512Mbit MOBILE DDR SDRAM based on 8M x 4Bank x16 I/O Specification of 512Mb 32Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 8,388,608 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512Mbit 512Mb 32Mx16bit) 512Mbit 16bit) H5MS5162DFR 16bits) H5MS5162 h5ms5162dfr-j3m hynix mcp DDR333 DDR370 DDR400

    Untitled

    Abstract: No abstract text available
    Text: Preliminary HY27SS 08/16 121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Sep.17.2003 Preliminary


    Original     		PDF HY27SS HY27US 512Mbit 64Mx8bit 32Mx16bit)

    HY27US08121

    Abstract: No abstract text available
    Text: HY27US 08/16 121A Series HY27SS(08/16)121A Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 History Initial Draft. Draft Date Remark Sep. 2004 Preliminary


    Original     		PDF HY27US HY27SS 512Mbit 64Mx8bit 32Mx16bit) HY27US08121

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 667 Unbuffered DIMM 256MB With 32Mx16 CL5 JM335Q644A-6 Description Placement The JM335Q644A-6 is a 32M x 64bits DDR2-667 Unbuffered DIMM. The JM335Q644A-6 consists of 4 pcs 32Mx16bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed


    Original     		PDF 240PIN 256MB 32Mx16 JM335Q644A-6 JM335Q644A-6 64bits DDR2-667 32Mx16bits 240-pin

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 533 Unbuffered DIMM 256MB With 32Mx16 CL4 TS32MLQ64V5M Placement Description The TS32MLQ64V5M is a 32M x 64bits DDR2-533 Unbuffered DIMM. The TS32MLQ64V5M consists of 4 pcs 32Mx16bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin


    Original     		PDF 240PIN 256MB 32Mx16 TS32MLQ64V5M TS32MLQ64V5M 64bits DDR2-533 32Mx16bits 240-pin

    Untitled

    Abstract: No abstract text available
    Text: 214PIN DDR2 533 Micro-DIMM 512MB With 32Mx16 CL4 TS64MMQ64V5M Description Placement The TS64MMQ64V5M is a 64M x 64bits DDR2-533 J Micro-DIMM. The TS64MMQ64V5M consists of 8pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board


    Original     		PDF 214PIN 512MB 32Mx16 TS64MMQ64V5M TS64MMQ64V5M 64bits DDR2-533 32Mx16bits

    48USOP1

    Abstract: HY27UF0812 HY27US08121 63FBGA HY27US HY27US0812 48pin-USOP1 hynix nand flash
    Text: HY27US 08/16 12(1/2)B Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512Mb NAND FLASH HY27US(08/16)12(1/2)B HY27US0812(1/2)B HY27US1612(1/2)B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF HY27US 512Mbit 64Mx8bit 32Mx16bit) 512Mb HY27US0812 HY27US1612 48USOP1 HY27UF0812 HY27US08121 63FBGA 48pin-USOP1 hynix nand flash

    HY27US08121A

    Abstract: HY27 HY27US hynix nand spare area
    Text: HY27US 08/16 121A Series HY27SS(08/16)121A Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 History Initial Draft. Draft Date Remark Sep. 2004 Preliminary


    Original     		PDF HY27US HY27SS 512Mbit 64Mx8bit 32Mx16bit) HY27US08121A HY27 hynix nand spare area

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 400 Unbuffered DIMM 256MB With 32Mx16 CL3 TS32MLQ64V4M Description The TS32MLQ64V4M is a 32M x 64bits DDR2-400 Unbuffered DIMM. The TS32MLQ64V4M consists of 4 pcs 32Mx16bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin


    Original     		PDF 240PIN 256MB 32Mx16 TS32MLQ64V4M TS32MLQ64V4M 64bits DDR2-400 32Mx16bits 240-pin

    Untitled

    Abstract: No abstract text available
    Text: 172PIN DDR2 400 Micro-DIMM 256MB With 32Mx16 CL3 TS256MPA0256U Description Placement The TS256MPA0256U is a 32M x 64bits DDR2-400 Micro-DIMM. The TS256MPA0256U consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 172-pin printed


    Original     		PDF 172PIN 256MB 32Mx16 TS256MPA0256U TS256MPA0256U 64bits DDR2-400 32Mx16bits 172-pin

    Untitled

    Abstract: No abstract text available
    Text: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 Micro-DIMM. The TS32MMQ64V5M consists of 4pcs J 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board


    Original     		PDF 214PIN 256MB 32Mx16 TS32MMQ64V5M TS32MMQ64V5M 64bits DDR2-533 32Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: 214PIN DDR2 533 Micro-DIMM 512MB With 32Mx16 CL4 TS64MMQ64V5M Description Placement The TS64MMQ64V5M is a 64M x 64bits DDR2-533 J Micro-DIMM. The TS64MMQ64V5M consists of 8pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board


    Original     		PDF 214PIN 512MB 32Mx16 TS64MMQ64V5M TS64MMQ64V5M 64bits DDR2-533 32Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 667 Unbuffered DIMM 256MB With 32Mx16 CL5 TS32MLQ64V6M Description Placement The TS32MLQ64V6M is a 32M x 64bits DDR2-667 Unbuffered DIMM. The TS32MLQ64V6M consists of 4 pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin


    Original     		PDF 240PIN 256MB 32Mx16 TS32MLQ64V6M TS32MLQ64V6M 64bits DDR2-667 32Mx16bits 240-pin

    Untitled

    Abstract: No abstract text available
    Text: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 J Micro-DIMM. The TS32MMQ64V5M consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board


    Original     		PDF 214PIN 256MB 32Mx16 TS32MMQ64V5M TS32MMQ64V5M 64bits DDR2-533 32Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 667 Unbuffered DIMM 256MB With 32Mx16 CL5 TS32MLQ64V6M Description Placement The TS32MLQ64V6M is a 32M x 64bits DDR2-667 Unbuffered DIMM. The TS32MLQ64V6M consists of 4 pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin


    Original     		PDF 240PIN 256MB 32Mx16 TS32MLQ64V6M TS32MLQ64V6M 64bits DDR2-667 32Mx16bits 240-pin

    Untitled

    Abstract: No abstract text available
    Text: 214PIN DDR2 533 Micro-DIMM 512MB With 32Mx16 CL4 TS64MMQ64V5M Description Placement The TS64MMQ64V5M is a 64M x 64bits DDR2-533 J Micro-DIMM. The TS64MMQ64V5M consists of 8pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board


    Original     		PDF 214PIN 512MB 32Mx16 TS64MMQ64V5M TS64MMQ64V5M 64bits DDR2-533 32Mx16bits

    HYM75V32M636LT6-H

    Abstract: HYM75V32M636LT6-K HYM75V32M636T6-H HYM75V32M636T6-K RA12
    Text: 32Mx64 bits PC133 SDRAM SO DIMM based on 32Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM75V32M636 L T6 Series DESCRIPTION The HYM75V32M636(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of four 32Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144 pin glass-epoxy printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each


    Original     		PDF 32Mx64 PC133 32Mx16 HYM75V32M636 32Mx64bits 32Mx16bits 400mil 54pin HYM75V32M636LT6-H HYM75V32M636LT6-K HYM75V32M636T6-H HYM75V32M636T6-K RA12

    hynix nand spare area

    Abstract: HY27 HY27US HY27S HY27US16121M HY27US08121
    Text: Preliminary HY27SS 08/16 121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Sep.17.2003 Preliminary


    Original     		PDF HY27SS HY27US 512Mbit 64Mx8bit 32Mx16bit) 512Mb hynix nand spare area HY27 HY27S HY27US16121M HY27US08121

    HY27Us08121a

    Abstract: HY27US HY27 48-TSOP1 HY27US08121
    Text: HY27US 08/16 121A Series HY27SS(08/16)121A Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 History Initial Draft. Draft Date Remark Sep. 2004 Preliminary


    Original     		PDF HY27US HY27SS 512Mbit 64Mx8bit 32Mx16bit) HY27Us08121a HY27 48-TSOP1 HY27US08121

    Untitled

    Abstract: No abstract text available
    Text: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 J Micro-DIMM. The TS32MMQ64V5M consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board


    Original     		PDF 214PIN 256MB 32Mx16 TS32MMQ64V5M TS32MMQ64V5M 64bits DDR2-533 32Mx16bits