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    32N170 Search Results

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    32N170 Price and Stock

    IXYS Corporation IXGT32N170-TRL

    IGBT 1700V 75A 350W TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGT32N170-TRL Cut Tape 1,904 1
    • 1 $21.45
    • 10 $16.042
    • 100 $21.45
    • 1000 $21.45
    • 10000 $21.45
    		Buy Now
    IXGT32N170-TRL Digi-Reel 1,904 1
    • 1 $21.45
    • 10 $16.042
    • 100 $21.45
    • 1000 $21.45
    • 10000 $21.45
    		Buy Now
    IXGT32N170-TRL Reel 1,200 400
    • 1 -
    • 10 -
    • 100 -
    • 1000 $14.35125
    • 10000 $14.35125
    		Buy Now
    Mouser Electronics IXGT32N170-TRL 649
    • 1 $21.45
    • 10 $16.04
    • 100 $14.36
    • 1000 $14.35
    • 10000 $14.35
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    TTI IXGT32N170-TRL Reel 400
    • 1 -
    • 10 -
    • 100 -
    • 1000 $14.93
    • 10000 $14.64
    		Buy Now

    IXYS Corporation IXGH32N170A

    IGBT 1700V 32A 350W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH32N170A Tube 980 1
    • 1 $19.52
    • 10 $19.52
    • 100 $12.94367
    • 1000 $19.52
    • 10000 $19.52
    		Buy Now
    Mouser Electronics IXGH32N170A 290
    • 1 $19.52
    • 10 $19.52
    • 100 $12.94
    • 1000 $12.76
    • 10000 $12.76
    		Buy Now
    TTI IXGH32N170A Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $16.64
    • 10000 $16.64
    		Buy Now
    TME IXGH32N170A 1
    • 1 $26.98
    • 10 $21.46
    • 100 $19.34
    • 1000 $19.34
    • 10000 $19.34
    		Get Quote

    IXYS Corporation IXGH32N170

    IGBT 1700V 75A 350W TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH32N170 Tube 449 1
    • 1 $18.45
    • 10 $18.45
    • 100 $12.18533
    • 1000 $18.45
    • 10000 $18.45
    		Buy Now
    Mouser Electronics IXGH32N170 220
    • 1 $20.63
    • 10 $20.62
    • 100 $16.35
    • 1000 $13.95
    • 10000 $13.95
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    TTI IXGH32N170 Tube 300 30
    • 1 -
    • 10 -
    • 100 $16.52
    • 1000 $16.52
    • 10000 $16.52
    		Buy Now
    TME IXGH32N170 7 1
    • 1 $25.82
    • 10 $20.4
    • 100 $18.38
    • 1000 $18.38
    • 10000 $18.38
    		Buy Now

    IXYS Corporation IXGF32N170

    IGBT 1700V 44A 200W I4PAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGF32N170 Tube 298 1
    • 1 $23.35
    • 10 $23.35
    • 100 $23.35
    • 1000 $23.35
    • 10000 $23.35
    		Buy Now
    Mouser Electronics IXGF32N170 139
    • 1 $23.35
    • 10 $23.33
    • 100 $15.93
    • 1000 $15.93
    • 10000 $15.93
    		Buy Now
    Newark IXGF32N170 Bulk 1
    • 1 $25.84
    • 10 $22.9
    • 100 $20.08
    • 1000 $20.08
    • 10000 $20.08
    		Buy Now
    TTI IXGF32N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $21.24
    • 10000 $21.24
    		Buy Now
    TME IXGF32N170 1
    • 1 $27.52
    • 10 $22.1
    • 100 $19.65
    • 1000 $19.65
    • 10000 $19.65
    		Get Quote

    IXYS Corporation IXGT32N170

    IGBT NPT 1700V 75A TO268AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGT32N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $15.02527
    • 10000 $15.02527
    		Buy Now
    Mouser Electronics IXGT32N170 4
    • 1 $23.42
    • 10 $20.81
    • 100 $18.81
    • 1000 $15.53
    • 10000 $15.53
    		Buy Now
    TTI IXGT32N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $20.84
    • 10000 $20.84
    		Buy Now
    TME IXGT32N170 1
    • 1 $26.56
    • 10 $21.04
    • 100 $19.02
    • 1000 $19.02
    • 10000 $19.02
    		Get Quote
    New Advantage Corporation IXGT32N170 500 1
    • 1 -
    • 10 -
    • 100 $36.08
    • 1000 $33.67
    • 10000 $33.67
    		Buy Now
    Find more 32N170 price and stock on Findchips.com

    32N170 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DH60-18A

    Abstract: IXGH32N170A PLUS247
    Text: Advance Technical Information IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 32N170H1 PLUS247 DH60-18A IXGH32N170A 728B1 123B1 728B1 065B1 PLUS247

    32n170

    Abstract: IXGT 32N170 IXGH 32N170
    Text: High Voltage IGBT IXGH 32N170 VCES IXGT 32N170 IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		PDF 32N170 O-247 O-268 728B1 123B1 728B1 065B1 32N170 IXGT 32N170 IXGH 32N170

    Untitled

    Abstract: No abstract text available
    Text: IXGH 32N170A IXGT 32N170A High Voltage IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A IC90 TC = 90°C 21 A ICM TC = 25°C, 1 ms


    Original     		PDF 32N170A 405B2

    32N170

    Abstract: 32N17
    Text: Advance Technical Data High Voltage IGBT IXGH 32N170 VCES IXGT 32N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		PDF 32N170 O-247 O-268 728B1 32N17

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage IGBT IXGH 32N170A IXGT 32N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32


    Original     		PDF 32N170A 728B1

    IXGX32N170H1

    Abstract: No abstract text available
    Text: IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) = 1700 V = 75 A = 3.3 V = 290 ns Preliminary Data Sheet\ Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous


    Original     		PDF 32N170H1 PLUS247 DH60-18A IXGH32N170A 405B2 IXGX32N170H1

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 32N170AH1 IXGH32N170A 405B2

    Untitled

    Abstract: No abstract text available
    Text: IXGR 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Electrically Isolated Tab = 1700 V = 38 A = 3.5 V = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 32N170H1 IXGH32N170 405B2

    Untitled

    Abstract: No abstract text available
    Text: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A


    Original     		PDF 32N170AH1 PLUS247 0-18A

    Untitled

    Abstract: No abstract text available
    Text: IXGV 32N170 High Voltage IGBT VCES IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


    Original     		PDF 32N170 PLUS220SMD PLUS220SMD IXGH32N170 728B1

    32N170AH1

    Abstract: 32N17 PLUS247 6018A S3670 32n170
    Text: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A


    Original     		PDF 32N170AH1 PLUS247 0-18A 32N170AH1 32N17 PLUS247 6018A S3670 32n170

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 32N170H1 PLUS247 DH60-18A IXGH32N170A 728B1 123B1 728B1 065B1

    IXGR32N170AH1

    Abstract: ISOPLUS247 IXGH32N170A
    Text: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 32N170AH1 IXGH32N170A 405B2 IXGR32N170AH1 ISOPLUS247

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT IXGH 32N170 VCES IXGT 32N170 IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		PDF 32N170 O-247 O-268 728B1 123B1 728B1 065B1 32N170

    Dh60

    Abstract: No abstract text available
    Text: Advance Technical Information IXGX 32N170AH1 High Voltage IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32


    Original     		PDF 32N170AH1 PLUS247 DH60-18A IXGH32N170A 405B2 Dh60

    IXGX32N170AH1

    Abstract: rg 710 diode DH60-18A ISOPLUS247 IXGH32N170A
    Text: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 32N170AH1 ISOPLUS247 DH60-18A IXGH32N170A 405B2 IXGX32N170AH1 rg 710 diode ISOPLUS247

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage IGBT IXGH 32N170A IXGT 32N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32


    Original     		PDF 32N170A 728B1

    IXGR32N170H1

    Abstract: 32N170H1
    Text: IXGR 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Electrically Isolated Tab = 1700 V = 38 A = 3.5 V = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 32N170H1 ISOPLUS247 E153432 IXGH32N170 405B2 IXGR32N170H1 32N170H1

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2