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    32N170H1 Search Results

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    DH60-18A

    Abstract: IXGH32N170A PLUS247
    Text: Advance Technical Information IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original
    PDF 32N170H1 PLUS247 DH60-18A IXGH32N170A 728B1 123B1 728B1 065B1 PLUS247

    IXGX32N170H1

    Abstract: No abstract text available
    Text: IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) = 1700 V = 75 A = 3.3 V = 290 ns Preliminary Data Sheet\ Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous


    Original
    PDF 32N170H1 PLUS247 DH60-18A IXGH32N170A 405B2 IXGX32N170H1

    Untitled

    Abstract: No abstract text available
    Text: IXGR 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Electrically Isolated Tab = 1700 V = 38 A = 3.5 V = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original
    PDF 32N170H1 IXGH32N170 405B2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original
    PDF 32N170H1 PLUS247 DH60-18A IXGH32N170A 728B1 123B1 728B1 065B1

    IXGR32N170H1

    Abstract: 32N170H1
    Text: IXGR 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Electrically Isolated Tab = 1700 V = 38 A = 3.5 V = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original
    PDF 32N170H1 ISOPLUS247 E153432 IXGH32N170 405B2 IXGR32N170H1 32N170H1

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2