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    32P3H Search Results

    32P3H Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    32P3H- E Mitsubishi Plastic 32pin 8 5 20mm TSOP Original PDF
    32P3H- F Mitsubishi Plastic 32pin 8 5 20mm TSOP Original PDF

    32P3H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 32P3H-F JEDEC Code – Weight g 0.37 Lead Material Alloy 42 MD e EIAJ Package Code TSOP 32-P-820-0.50 Plastic 32pin 8✕20mm TSOP( ) HD e b2 D 1 32 E I2 Recommended Mount Pad y Symbol A A2 L1 A1 F b 16 c 17 L Detail F A A1 A2 b c D E e HD L L1 y b2 I2 MD


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    PDF 32P3H-F 32-P-820-0 32pin

    tsop 17

    Abstract: E1732
    Text: E 17 32 D HD JEDEC Code – F Weight g 0.37 16 1 L L1 Detail F Lead Material Alloy 42 A EIAJ Package Code TSOP 32-P-820-0.50 A2 A1 e b y e b2 32P3H-F c b2 I2 MD A A1 A2 b c D E e HD L L1 y Symbol Mar.’98 Dimension in Millimeters Min Nom Max – – 1.2


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    PDF 32-P-820-0 32P3H-F 32pin tsop 17 E1732

    32P3H- E

    Abstract: No abstract text available
    Text: JEITA Package Code P-TSOP 1 32-8x18.4-0.50 RENESAS Code PTSA0032KA-A Previous Code 32P3H-E MASS[Typ.] 0.4g HD 1 D *3 b p *2 32 e *1 E y S NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. 17 S 16 F


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    PDF 32-8x18 PTSA0032KA-A 32P3H-E 32P3H- E

    Untitled

    Abstract: No abstract text available
    Text: JEITA Package Code P-TSOP 1 32-8x18.4-0.50 RENESAS Code PTSA0032KA-B Previous Code 32P3H-F MASS[Typ.] 0.4g HD Index mark bp 32 D 1 *3 *2 e *1 E y S NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.


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    PDF 32-8x18 PTSA0032KA-B 32P3H-F

    Untitled

    Abstract: No abstract text available
    Text: E 16 1 EIAJ Package Code TSOP 32-P-820-0.50 D HD JEDEC Code – F Weight g 0.37 17 32 Lead Material Alloy 42 A 32P3H-E A2 A1 e Detail F b L L1 y e b2 c b2 I2 MD A A1 A2 b c D E e HD L L1 y Symbol Mar.’98 Dimension in Millimeters Min Nom Max – – 1.2


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    PDF 32-P-820-0 32P3H-E 32pin

    B17C

    Abstract: 32P3H-E
    Text: 32P3H-E Plastic 32pin 8✕20mm TSOP JEDEC Code – Weight(g) 0.37 Lead Material Alloy 42 MD e EIAJ Package Code TSOP 32-P-820-0.50 HD e b2 D 32 1 E I2 Recommended Mount Pad y Symbol A A2 L1 A1 F b 17 c 16 L Detail F A A1 A2 b c D E e HD L L1 y b2 I2 MD


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    PDF 32P3H-E 32pin 32-P-820-0 B17C 32P3H-E

    M5M51008BFP

    Abstract: M5M51008BVP
    Text: 1997-4/1 MITSUBISHI LSIs M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL, -70VLL,-10VLL,-12VLL,-15VLL-I 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS FEATURES Type name M5M51008BFP,VP,RV,KV,KR-70VL


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    PDF M5M51008BFP -70VL -10VL -12VL -15VL, -70VLL -10VLL -12VLL -15VLL-I 1048576-BIT M5M51008BVP

    M5M5V108DFP

    Abstract: M5M5V108DKV M5M5V108DVP
    Text: 7th.July.2000 Ver. 1.1 MITSUBISHI LSIs M5M5V108DFP,VP,KV -70HI 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology.


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    PDF M5M5V108DFP -70HI 1048576-BIT 131072-WORD M5M5V108DVP 32-pin M5M5V108DKV

    A1245

    Abstract: M5M51008BVP M5M51008BP
    Text: 1997-3/25 MITSUBISHI LSIs M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L, -55LL,-70LL,-10LL 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS FEATURES Power supply current Type name M5M51008BP,FP,VP,RV,KV,KR-55L


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    PDF M5M51008BP -55LL -70LL -10LL 1048576-BIT 131072-WORD KR-55L KR-70L A1245 M5M51008BVP

    SMD a16 Transistor

    Abstract: DQ7-21 MARK S2 smd transistor A8 M5M5V108CFP M5M5V108CRV M5M5V108CVP
    Text: MITSUBISHI LSIs M5M5V108CFP,VP,RV,KV,KR -70HI, -10HI, -70XI, -10XI 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and


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    PDF M5M5V108CFP -70HI, -10HI, -70XI, -10XI 1048576-BIT 131072-WORD M5M5V108CVP SMD a16 Transistor DQ7-21 MARK S2 smd transistor A8 M5M5V108CRV

    R1LP0108ESA-7SR

    Abstract: No abstract text available
    Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0151EJ0100 Rev.1.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher


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    PDF R1LP0108E R10DS0151EJ0100 072-word 32-pin R1LP0108ESA-7SR

    Untitled

    Abstract: No abstract text available
    Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0300 Rev.3.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher


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    PDF R1LP0108E R10DS0029EJ0300 072-word 32-pin

    432W6

    Abstract: 48P4B hssop 44P3W-R 28P0 5P5T tsop 2-54 42P9R 70P3S-M 479F7G
    Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES LIST OF PACKAGE CODES CLASSIFIED ACCORDING TO PIN NUMBER 1. LIST OF PACKAGE CODES CLASSIFIED ACCORIDING TO PIN NUMBER Pin Count Structure Type Lead Pitch mm 5 P P P P P P C C P P P C P P P P P P P P C P P P P P P P


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    PDF 240K6X-A 240P6Y-A 240P6Z-A 255F7F 256F7B 256F7X-A/B 256P6J-E 256P6K-E 272F7X-A/B 281S8-C 432W6 48P4B hssop 44P3W-R 28P0 5P5T tsop 2-54 42P9R 70P3S-M 479F7G

    M5M51008CP

    Abstract: M5M51008CRV M5M51008CVP
    Text: MITSUBISHI LSIs M5M51008CP,FP,VP,RV,KV,KR -55H, -70H, -55X, -70X 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and


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    PDF M5M51008CP 1048576-BIT 131072-WORD M5M51008CVP 32-pin M5M51008CRV

    R1LP0108ESP

    Abstract: R1LP0108ESF R1LP0108 R1LP0108ESP-7SI R1LP0108ESF-7SR R1LP0108ESP-7SR R1LP0108es r1lp0108esp-5si#s0 r1lp0108esp-7sr#b0 ttl 7202
    Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0200 Rev.2.00 2011.01.14 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher


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    PDF R1LP0108E R10DS0029EJ0200 072-word 32-pin R1LP0108ESP R1LP0108ESF R1LP0108 R1LP0108ESP-7SI R1LP0108ESF-7SR R1LP0108ESP-7SR R1LP0108es r1lp0108esp-5si#s0 r1lp0108esp-7sr#b0 ttl 7202

    TI_BQ24721C_QFN_32P

    Abstract: M5M51016 M5M51008BVP
    Text: # Low power dissipation s ta tic RAMs Low voltage operation (Continued) Memory capacity Max. Memory Configuration Function mode time (nsS 120 Ice (Power down) = 10 p A (max) = 0.3 'utfine M5M51008BFP-12VLL 32P 2M -A M5M51008BVP-12VLL 32P3H-E M5M51008BR V -12VLL


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    PDF 32P3H-E 32P3H M5M51008BFP-12VLL M5M51008BVP-12VLL 128Kx8 M5M51008BR -12VLL M5M51Q08BKP- M5M51008BKH-12VLL M5M510 TI_BQ24721C_QFN_32P M5M51016 M5M51008BVP

    M5M51008AP

    Abstract: RV-12L
    Text: MITSUBISHI LSIs M5M51008AP,FP,VP,RV-70L,-85L,-1 OL, -12L,-70LL,-85LL,-1 OLL,-12LL 1048576-BIT 131072-WQRD B Y 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008AP, FP, VP, RV are a 1 0 4 8 5 7 6 -bit CMOS static RAM organized as 131072 word by 8 - bit which are


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    PDF M5M51008AP RV-70L -70LL -85LL -12LL 1048576-BIT( 131072-WQRD M5M51008AP, M5M51008AVP, M5M51008AVP RV-12L

    M5M5512FP-70LL

    Abstract: SS12R 32P3H- E 1008BP-7QL
    Text: Memory Configuration Memoty capacity Max. access time us Function mod» 45 with (SÏ, S2, ÒE) Icc (Power down) = 10 /x A (max) 55 = 0.1 mA (typ) 70 512K 64Kx8 45 i with (SÏ. S2, ÔE) Icc (Power down) = 5 ft A (max) = 0.1 !x 55 A (typ) 70 55 with (SÏ, S2, OË)


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    PDF M5MSS12P-45LL M5M5512FP-45UL 5512VP-45LL M5M5512RV-45LL 12KV-45LL S512KR-45LL M5M5512P-55U. M5M5512VP-55LL M5MS512RV-55UM5M55I2KV-55LL 12KR-5SLL M5M5512FP-70LL SS12R 32P3H- E 1008BP-7QL

    MSM5512

    Abstract: MSM551 TI_BQ24721C_QFN_32P M5M5512 M5M5256DVP-8
    Text: MEMORIES Low power dissipation static RAMs Low voltag e operation Memory capacity Memory Configuration Max. access Function mode Package Outline type No. time (n*) 70 Low voltage O peration (3.0 to 3.6V) Icc (Power down) = 10 ^ A (max) = 0 .0 5 // A (typ)


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    PDF M5M5256DFP-70VLL M5M5256QVP-70VLL M5M5256DRV-70VLL M5M5256DFP-85VLL M5M5256DVP-85VLL M5M5256DRV-85VLL M5M5256DFP-10VLL M5M5256DVP-10VLL M5M5Z560RV-10VLL M5M5256DFP-12VLL MSM5512 MSM551 TI_BQ24721C_QFN_32P M5M5512 M5M5256DVP-8

    m5m51008afp

    Abstract: m5m51008avp M5M51008AV
    Text: MITSUBISHI LSIs M5M51008AFP,VP,RV-85VL,-1 OVL, -85VLL,-1 OVLL 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008AFP, VP, RV are a 1048576-bit CMOS static RAM organized as 131072 word by 8 - b it which are fabricated using high-performance triple polysilicon CMOS


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    PDF M5M51008AFP RV-85VL -85VLL 1048576-BIT 131072-WORD M5M51008AFP, M5M51008AVP, M5M51008AVP M5M510oltage m5m51008avp M5M51008AV

    PP5V

    Abstract: M5M28F101AFP 708-8034
    Text: K MITSUBISHI LSIs _ ' M 5 M 2 8 F 1 0 1 _ A F P , J , V P , R V - 8 5 , - 1 0 , - 1 2 1048576-BIT 131072-WQRD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION The MITSUBISHI M5M28F101A is hlgh-speei 1048576-bit CMOS Flash Memories. This is suitable for the api lications with micro­


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    PDF 1048576-BIT 131072-WQRD M5M28F101A 1048576-bit 32pin --A14 MD5-MEM-05-6/95-500 PP5V M5M28F101AFP 708-8034

    Untitled

    Abstract: No abstract text available
    Text: '97.3.21 MITSUBISHI LSIs M5M5V208FP,VP,RV,KV,KR -tol-w, -85L-W, -10L-W, -12L-W, _ n.,nnrNn/araw -70LL-W, -85LL-W, -10LL-W, -12LL-W ip jB lU llö M /Ä W Y N o tic e T h is is n e t • Som e paramètre: limits are subject_ 2097152-BIT 262144-WORD BY 8-BIT CMOS STATIC RAM


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    PDF M5M5V208FP -85L-W, -10L-W, -12L-W, -70LL-W -85LL-W -10LL-W -12LL-W 2097152-BIT 262144-WORD

    m5m5v208

    Abstract: AX8560 Kr85
    Text: '97.3.21 MITSUBISHI LSIs M5M5V208FP,VP,RV,KV,KR -70L-W, -85L-W, - 10L-W, - 12 L-W, nnn,nAf5 W -70LL-W, -85LL-W, -10LL-W, -12LL-W Notice: This is not a final sP ^ ^ ° o c h ange. s o m e p a ra m e tric lim its are sud io c 2Q g71 g 2 B |J 2 g 2 1 44.WORD BY 8-BIT) CMOS STATIC RAM


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    PDF M5M5V208FP -70L-W, -85L-W, 10L-W, -70LL-W, -85LL-W, -10LL-W, -12LL-W M5M5V208 152-bit AX8560 Kr85

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M51T08AP,FP,VP,RV-55SL 1048576-BIT 131Q72-WORD BY8-BIT CM0S STATIC RAM DESCRIPTION The M5M51T08AP, FP, VP, RV are a 1048576- bit CMOS static RAM organized as 131072 word by 8 - bit which are fabricated using high-performance quadruple-polysilicon


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    PDF M5M51T08AP RV-55SL 1048576-BIT 131Q72-WORD M5M51T08AP, 32-pin