Untitled
Abstract: No abstract text available
Text: JEITA Package Code P-TSOP 1 32-8x18.4-0.50 RENESAS Code PTSA0032KA-B Previous Code 32P3H-F MASS[Typ.] 0.4g HD Index mark bp 32 D 1 *3 *2 e *1 E y S NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
|
Original
|
32-8x18
PTSA0032KA-B
32P3H-F
|
PDF
|
32P3H- E
Abstract: No abstract text available
Text: JEITA Package Code P-TSOP 1 32-8x18.4-0.50 RENESAS Code PTSA0032KA-A Previous Code 32P3H-E MASS[Typ.] 0.4g HD 1 D *3 b p *2 32 e *1 E y S NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. 17 S 16 F
|
Original
|
32-8x18
PTSA0032KA-A
32P3H-E
32P3H- E
|
PDF
|
B17C
Abstract: 32P3H-E
Text: 32P3H-E Plastic 32pin 8✕20mm TSOP JEDEC Code – Weight(g) 0.37 Lead Material Alloy 42 MD e EIAJ Package Code TSOP 32-P-820-0.50 HD e b2 D 32 1 E I2 Recommended Mount Pad y Symbol A A2 L1 A1 F b 17 c 16 L Detail F A A1 A2 b c D E e HD L L1 y b2 I2 MD
|
Original
|
32P3H-E
32pin
32-P-820-0
B17C
32P3H-E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: E 16 1 EIAJ Package Code TSOP 32-P-820-0.50 D HD JEDEC Code – F Weight g 0.37 17 32 Lead Material Alloy 42 A 32P3H-E A2 A1 e Detail F b L L1 y e b2 c b2 I2 MD A A1 A2 b c D E e HD L L1 y Symbol Mar.’98 Dimension in Millimeters Min Nom Max – – 1.2
|
Original
|
32-P-820-0
32P3H-E
32pin
|
PDF
|
R1LP0108ESP-7S
Abstract: R1LP0108ESP-5S R1LP0108 R1LP0108ESF R1LP0108ESP
Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0100 Rev.1.00 2010.10.20 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher
|
Original
|
R1LP0108E
R10DS0029EJ0100
072-word
32-pin
R1LP0108ESP-7S
R1LP0108ESP-5S
R1LP0108
R1LP0108ESF
R1LP0108ESP
|
PDF
|
sram card 60 pin mitsubishi
Abstract: m5m51008c M5M5408
Text: L-41001-0E MITSUBISHI ELECTRIC Mitsubishi Low Power SRAM Technical Direction 256K 512K 1M 2M 4M 8M 16M Large Capacity Low Power SRAM High Speed Power down current 5.0V±0.5V : 55ns 256K : XL ver. 2µA max. 2.7V~3.6V : 85ns 70ns/55ns 1M : XL ver. 4µA max.
|
Original
|
L-41001-0E
70ns/55ns
L-41002-0H
sram card 60 pin mitsubishi
m5m51008c
M5M5408
|
PDF
|
L24002
Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities
|
Original
|
L-11002-01
64MDRAM
64MSDRAM
128MSDRAM
256MSDRAM
144MRDRAM
L24002
NAND "read disturb" 1GB
Toshiba 512 NAND MLC FLASH BGA
PC133 registered reference design
CMOS 0.8mm process cross
Lithium battery CR2025 sony
M2V28S30AVP
M5M51008CFP
|
PDF
|
sandisk micro sd card pin
Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM
|
Original
|
L-11002-01
L-11003-0I
sandisk micro sd card pin
MCP 1Gb nand 512mb dram 130
256K x 16 DRAM FPM cross reference
Toshiba NAND MLC FLASH BGA
TSOP 48 Package nand memory toshiba
MCP 1Gb 512Mb 130
PC133 registered reference design
L7103
02bjxx
ulsi
|
PDF
|
TI_BQ24721C_QFN_32P
Abstract: M5M51016 M5M51008BVP
Text: # Low power dissipation s ta tic RAMs Low voltage operation (Continued) Memory capacity Max. Memory Configuration Function mode time (nsS 120 Ice (Power down) = 10 p A (max) = 0.3 'utfine M5M51008BFP-12VLL 32P 2M -A M5M51008BVP-12VLL 32P3H-E M5M51008BR V -12VLL
|
OCR Scan
|
32P3H-E
32P3H
M5M51008BFP-12VLL
M5M51008BVP-12VLL
128Kx8
M5M51008BR
-12VLL
M5M51Q08BKP-
M5M51008BKH-12VLL
M5M510
TI_BQ24721C_QFN_32P
M5M51016
M5M51008BVP
|
PDF
|
MSM5512
Abstract: MSM551 TI_BQ24721C_QFN_32P M5M5512 M5M5256DVP-8
Text: MEMORIES Low power dissipation static RAMs Low voltag e operation Memory capacity Memory Configuration Max. access Function mode Package Outline type No. time (n*) 70 Low voltage O peration (3.0 to 3.6V) Icc (Power down) = 10 ^ A (max) = 0 .0 5 // A (typ)
|
OCR Scan
|
M5M5256DFP-70VLL
M5M5256QVP-70VLL
M5M5256DRV-70VLL
M5M5256DFP-85VLL
M5M5256DVP-85VLL
M5M5256DRV-85VLL
M5M5256DFP-10VLL
M5M5256DVP-10VLL
M5M5Z560RV-10VLL
M5M5256DFP-12VLL
MSM5512
MSM551
TI_BQ24721C_QFN_32P
M5M5512
M5M5256DVP-8
|
PDF
|
M5M5512FP-70LL
Abstract: SS12R 32P3H- E 1008BP-7QL
Text: Memory Configuration Memoty capacity Max. access time us Function mod» 45 with (SÏ, S2, ÒE) Icc (Power down) = 10 /x A (max) 55 = 0.1 mA (typ) 70 512K 64Kx8 45 i with (SÏ. S2, ÔE) Icc (Power down) = 5 ft A (max) = 0.1 !x 55 A (typ) 70 55 with (SÏ, S2, OË)
|
OCR Scan
|
M5MSS12P-45LL
M5M5512FP-45UL
5512VP-45LL
M5M5512RV-45LL
12KV-45LL
S512KR-45LL
M5M5512P-55U.
M5M5512VP-55LL
M5MS512RV-55UM5M55I2KV-55LL
12KR-5SLL
M5M5512FP-70LL
SS12R
32P3H- E
1008BP-7QL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 5 1 T 0 8 A F P , V P , R p ftC IJ M I N A R Y No«e Th- V - 1 2 V S L . - 1 5 V S L 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM ; u S « ,“« ct'“n9e' DESCRIPTION The M 5M 51T08AFP,VP,RV are a 1048576-bit C M O S static RAM
|
OCR Scan
|
1048576-BIT
131072-WORD
51T08AFP
120ns
M5M51T08AFP0
|
PDF
|
M5M51008AP
Abstract: M5M5I008AP M5M51008AVP
Text: MITSUBISHI LSIs M5M51008AP, FP, VP, RV-70L,-85L,-1 OL, -12L,-70LL,-85LL,-1 OLL,-12LL 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008AP, FP, VP, RV are a 1 0 4 8 5 7 6 -bit CMOS static RAM organized as 131072 word by 8 -b it which are
|
OCR Scan
|
M5M51008AP,
RV-70L
-70LL
-85LL
-12LL
1048576-BIT
131072-WORD
M5M51008AVP,
M5M51008AVP
M5M51008AP
M5M5I008AP
M5M51008AVP
|
PDF
|
m5m51008afp
Abstract: m5m51008avp M5M51008AV
Text: MITSUBISHI LSIs M5M51008AFP,VP,RV-85VL,-1 OVL, -85VLL,-1 OVLL 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008AFP, VP, RV are a 1048576-bit CMOS static RAM organized as 131072 word by 8 - b it which are fabricated using high-performance triple polysilicon CMOS
|
OCR Scan
|
M5M51008AFP
RV-85VL
-85VLL
1048576-BIT
131072-WORD
M5M51008AFP,
M5M51008AVP,
M5M51008AVP
M5M510oltage
m5m51008avp
M5M51008AV
|
PDF
|
|
|
m5m28F101J
Abstract: No abstract text available
Text: b S M 'ìfiP S Ü0 5 3 1 b 3 Mflfl MITSUBISHI LSIs • M I T I M 5 M 2 8 F 1 01 P ,F P ,J ,V P ,R V -1 0 ,-1 2 ,-1 5 1048576-BIT 131072-WORD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION PIN CONFIGURATION (TOP VIEW) The Mitsubishi M5M28F101P, FP, J, VP, RV are high-speed
|
OCR Scan
|
1048576-BIT
131072-WORD
M5M28F101P,
28F101
32pin
RV-10
131072-WQRD
m5m28F101J
|
PDF
|
M5M28F101P
Abstract: m5m28f101
Text: \VTS V B IS H ' L S 's M 5 M 2 8 F 1 0 1 P , F P , J , V P , R V - ,- 1 2 , - 1 5 1 0 1048576-BIT 131072-WQRD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION PIN CONFIGURATION (TOP VIEW) The Mitsubishi M5M28F101P, FP, J, VP, RV are high-speed 1 0 4 8 5 7 6 -bit CMOS Flash Memories. They are suitable for
|
OCR Scan
|
1048576-BIT
131072-WQRD
M5M28F101P,
28F101
32pin
M5M28F101P
-V777
RV-10
m5m28f101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1997-3/25 MITSUBISHI LSIs M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L, -55LL,-70LL,-1 OLL _ 1048576-BIT 131072-WQRD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008BP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are
|
OCR Scan
|
M5M51008BP
-55LL
-70LL
1048576-BIT
131072-WQRD
M5M51008BVP
32-pin
|
PDF
|
