Untitled
Abstract: No abstract text available
Text: 32x72 bits PC100 SDRAM Registered DIMM with PLL, based on 32Mx4 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V75S3201 NG-Series s DESCRIPTION The Hyundai HYM71V75S3201 NG-Series are 32Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 32Mx4bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, two 18bits driver ICs in
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32x72
PC100
32Mx4
HYM71V75S3201
32Mx72bits
32Mx4bit
400mil
54pin
18bits
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HYM71V73C3201
Abstract: No abstract text available
Text: 32x72 bits PC133 SDRAM Registered DIMM with PLL, based on 32Mx4 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V73C3201 N-Series s DESCRIPTION The Hyundai HYM71V73C3201 N-Series are 32Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 32Mx4bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, two 18bits driver ICs in
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32x72
PC133
32Mx4
HYM71V73C3201
32Mx72bits
32Mx4bit
400mil
54pin
18bits
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Untitled
Abstract: No abstract text available
Text: L3272PX3–723XS73X 32x72 PC133 SDRAM LEGEND Performance Technology L3272PX3–723XS73X 32x72 PC133 SDRAM FEATURES • PC133 compliant • JEDEC-standard 168-pin, dual in-line memory module DIMM • Unbuffered • 256MB ECC • Single +3.3V ±0.3V power supply
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L3272PX3
723XS73X
32x72
PC133
723XS73X
168-pin,
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Untitled
Abstract: No abstract text available
Text: 32x72 bits PC100 SDRAM Registered DIMM with PLL, based on 32Mx4 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V75S3201 N-Series DESCRIPTION The Hyundai HYM71V75S3201 N-Series are 32Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 32Mx4bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, two 18bits driver ICs in 56pin
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32x72
PC100
32Mx4
HYM71V75S3201
32Mx72bits
32Mx4bit
400mil
54pin
18bits
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Untitled
Abstract: No abstract text available
Text: L3272QX3–59AXS73X 32x72 PC133 REGISTERED SDRAM LEGEND Performance Technology L3272QX3–59AXS73X 32x72 PC133 REGISTERED SDRAM FEATURES • PC133 compliant • JEDEC-standard 168-pin, dual in-line memory module DIMM • Registered • 256MB ECC • Single +3.3V ±0.3V power supply
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L3272QX3
59AXS73X
32x72
PC133
59AXS73X
168-pin,
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Untitled
Abstract: No abstract text available
Text: A2709256 32x72 PC133 SDRAM LEGEND Performance Technology A2709256 32x72 PC133 SDRAM FEATURES • PC100 and PC133 compliant • JEDEC-standard 168-pin, dual in-line memory module DIMM • Unbuffered • 256MB ECC • Single +3.3V ±0.3V power supply • Fully synchronous; all signals registered on positive edge of system clock
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A2709256
32x72
PC133
A2709256
PC100
168-pin,
256MB
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A3292256
Abstract: No abstract text available
Text: LEGEND A3292256 32x72 PC133 SDRAM Performance Technology A3292256 32x72 PC133 SDRAM Part formerly known as A2709256. Part has not changed, only reference name has changed FEATURES • PC100 and PC133 compliant • JEDEC-standard 168-pin, dual in-line memory module (DIMM)
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A3292256
32x72
PC133
A3292256
A2709256.
PC100
168-pin,
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da53
Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
Text: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and
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128/144Mbit
256Kx16/18x32s)
128/144-Mbit
600MHz
800MHz
DL0059-00
da53
HY5R128HC745
HY5R128HC840
HY5R128HC845
HY5R144HC653
HY5R144HC745
HY5R144HC840
HY5R144HC845
HY5R144HM745
HY5R144HM845
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da53
Abstract: uPD488385FB-C60-53-BF1 uPD488385FB-C80-40-BF1 uPD488385FB-C80-45-BF1 uPD488385FB-C80-50-BF1
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD488385 72 M-bit 256K x 18 x 16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where
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PD488385
da53
uPD488385FB-C60-53-BF1
uPD488385FB-C80-40-BF1
uPD488385FB-C80-45-BF1
uPD488385FB-C80-50-BF1
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VC5471
Abstract: No abstract text available
Text: TMS320VC5471 Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS180C June 2001 – Revised December 2002 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments
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TMS320VC5471
SPRS180C
VC5471
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Untitled
Abstract: No abstract text available
Text: TMS320VC5471 Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS180C June 2001 - Revised December 2002 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments
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SPRS180C
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RDRAM Clock
Abstract: No abstract text available
Text: Direct RDRAM PRELIMINARY 128/144-Mbit 256Kx16/18x32s Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and
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128/144-Mbit
256Kx16/18x32s)
128/144-Mbit
600MHz
800MHz
RDRAM Clock
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da53
Abstract: DB26 KM416RD8AC KM418RD8AC
Text: KM416RD8AC D /KM418RD8AC(D) Direct RDRAM 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.01 October 1999 Page -2 Rev. 1.01 Oct. 1999 KM416RD8AC(D)/KM418RD8AC(D) Direct RDRAM™ Revision History Version 1.0 (July 1999) - Preliminary
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KM416RD8AC
/KM418RD8AC
128/144Mbit
da53
DB26
KM418RD8AC
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Untitled
Abstract: No abstract text available
Text: TMS320VC5471 Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS180C June 2001 – Revised December 2002 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments
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RR3 rf receiver
Abstract: DB26 D-B54 DL005 D-A54
Text: TARGET KM416RD4C/KM418RD4C Direct RDRAM Overview The Direct Rambus DRAM Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where
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KM416RD4C/KM418RD4C
64/72-Mbit
600Mbps
800Mbps
RR3 rf receiver
DB26
D-B54
DL005
D-A54
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079R
Abstract: DDR DIMM 184 pinout
Text: REVISIONS I. DESCRIPTION: DATE REV Ÿ W4F232726HA-5Q is a 32MX72 industry standard 184-pin low profile registered DDR400B-333 SDRAM DIMM for PC3200 Intel compatible Ÿ Manufactured with 9 Infineon 32MX8 400-mil TSOPII-66 Double Data Rate Synchronous DESCRIPTION
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W4F232726HA-5Q
32MX72
184-pin
DDR400B-333
PC3200
32MX8
400-mil
TSOPII-66
10-column,
079R
DDR DIMM 184 pinout
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Untitled
Abstract: No abstract text available
Text: . IBMB6M32734CGA Preliminary 32Mx72 One Bank Registered DDR SDRAM Module Features • 184-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Double Data Rate DDR SDRAM DIMM (32M X 4 SDRAMS) • Performance: PC1600 3.5 Units DIMM CAS Latency 3 fCK
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IBMB6M32734CGA
32Mx72
184-Pin
PC1600
88H4719
H41861
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Untitled
Abstract: No abstract text available
Text: TMS320VC5471 Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS180C June 2001 − Revised December 2002 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments
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SPRS180C
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Untitled
Abstract: No abstract text available
Text: Signetics PLHS501 Programmable Macro Logic Random Logic Unit 32x72x24 Product Specification Military Application Specific Products PIN CONFIGURATION DESCRIPTION FEATURES The PLHS501 is a member of the Signetics Programmable Macro Logic family. P M L is unique in its capability of
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PLHS501
PLHS501
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Ba 33 bco
Abstract: No abstract text available
Text: Direct RDRAM RAMBUS TM 32/36-M bit 256K x16/18x8d ADVANCE INFORMATION O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application
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32/36-M
x16/18x8d)
/36-M
600MHz
Ba 33 bco
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Untitled
Abstract: No abstract text available
Text: Order this data sheet by H4C/D MOTOROLA H SEMICONDUCTOR “ TECHNICAL DATA Advance Information H4C SERIES CMOS ARRAYS and the CDA™ ARCHITECTURE H IG H P ER FO R M A NC E T R IP L E LAYER M ETAL S U B -M IC R O N CMOS ARRAYS The s u b -m ic ro n H 4C S e rie s ’ " CM OS gate array fa m ily and th e new
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Untitled
Abstract: No abstract text available
Text: Direct RDRAM RAMBUS ADVANCE INFORMATION TM 128/144-Mbit 256Kx16/18x32s O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application
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128/144-Mbit
256Kx16/18x32s)
128/144-M
600MHz
DL0059-00
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MCR 22-8 transistor power
Abstract: Transistor motorola 418 10146 1987 carrier A022H on 5295 equivalents HDC031 Mustang 300 HDC011 HDC016 HDC049
Text: Order this data sheet by HDC/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH PERFORMANCE TRIPLE LAYER METAL HDC SERIES CMOS ARRAYS 1.0 MICRON CMOS ARRAYS Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a significant advancement in microchip technology.
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82S208
Abstract: 82S2 33um
Text: 82S208-F • 82S210-F.N DESCRIPTION The 82S208 and 82S210 data inputs and o u tp u ts are com m on com m on I/O w ith separate output disable (OD) line tha t a l low s ease of re a d /w rite operations using a common bus. The a d dress inputs have a latch feature con
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82S208-F
82S210-F
82S208
82S210
82S2
33um
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