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    InGaas PIN photodiode chip

    Abstract: EPITAXX EPITAXX 25b InGaas PIN photodiode chip back illuminated InGaAs photodiode 0G001 100C rise time of photodiode ETX 40 EPITAXX etx-25b
    Text: EPITAXX SQE » INC • 33b0H0b GQG01S0 H H E P X " 7 ^ 4 fcHII A A A ETX 25B High Speed Back-Illuminated InGaAs PIN Photodiode Description: EPITAXX ETX 25B is a small area planar InGaAs photodiode mounted on a ceramic subcarrier. The device is illuminated through the substrate and its very low capacitance allows direct modulation at


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    PDF 33b040b 1300nm 10kHz InGaas PIN photodiode chip EPITAXX EPITAXX 25b InGaas PIN photodiode chip back illuminated InGaAs photodiode 0G001 100C rise time of photodiode ETX 40 EPITAXX etx-25b

    epitaxx

    Abstract: No abstract text available
    Text: EPITAXX INC 50E t • 33b0H0b 0000178 4 « E P X 7 ~ 4/~ O S ~ EPITAXX E P L 1 30Q T 1.3 uni Laser Diode in CD Package Features ■ High optical output power: PQ= 5 mW • High speed: tr, ^ = 0.5 ns max. ■ Stable fundamental transverse mode ■ Built-in InGaAs photodiode for monitoring


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    PDF 33b0H0b EPITAXXEDL1300Tisa epitaxx