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    33N45 Search Results

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    33N45 Price and Stock

    SiTime Corporation SIT8918AE-13-33N-45.000000

    MEMS OSC XO 45.0000MHZ LVCMOS LV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT8918AE-13-33N-45.000000 217 1
    • 1 $2.52
    • 10 $2.174
    • 100 $1.8766
    • 1000 $1.62187
    • 10000 $1.46573
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    SiTime Corporation SIT8918BE-13-33N-45.000000

    MEMS OSC XO 45.0000MHZ LVCMOS LV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT8918BE-13-33N-45.000000 212 1
    • 1 $2.32
    • 10 $2.265
    • 100 $1.8875
    • 1000 $1.56395
    • 10000 $1.40217
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    Vishay Semiconductors SD233N45S50PSC

    DIODE GEN PURP 4.5KV 235A B-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SD233N45S50PSC Bulk 6
    • 1 -
    • 10 $145.83667
    • 100 $145.83667
    • 1000 $145.83667
    • 10000 $145.83667
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    Vishay Sfernice RMK33N45K3F45K3B

    SFERNICE THIN FILMS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RMK33N45K3F45K3B Tray 100
    • 1 -
    • 10 -
    • 100 $16.4162
    • 1000 $16.4162
    • 10000 $16.4162
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    SiTime Corporation SIT2024BI-S1-33N-45.000000

    MEMS OSC XO 45.0000MHZ SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT2024BI-S1-33N-45.000000 1
    • 1 $2.62
    • 10 $2.563
    • 100 $2.1355
    • 1000 $1.76942
    • 10000 $1.58638
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    33N45 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3CUN

    Abstract: IXTK33N45 IXTK33N50
    Text: Preliminary Data Sheet v High Current MegaMOS FET 33N45 IXTK33N50 p DSS ^D25 450 V 500 V DS on 33 A 0.16 Q 33 A 0.17 Q N-Channel Enhancement Mode M axim um ra tin g s Sym bol Test c o n d itio n s VDss Tj = 25°C to 150°C v DGR Tj = 2 5 °C to 150°C; %s = 1.0 MO


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    PDF IXTK33N45 IXTK33N50 33N50 33N45 33N45 O-264 3CUN IXTK33N50

    6N80

    Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68


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    PDF 67N10 75N10 42N20 50N20 68N20 35N30 40N30 30N45 12N50A 21N50 6N80 IXTN 36N50 C 40N160 40N140 ixtn 79n20 irfp 240 IXTK33N50 IXTN21N100 IRFP

    IXTK33N50

    Abstract: 33N50 IXTK33N45 P 317 diode aa 113
    Text: a ix Y S Preliminary Data Sheet V DSS High Current MegaMOS FET 33N45 IXTK33N50 450 V 500 V ^D25 □ DS on 33 A 0.16 a 33 A 0.17 a N-Channel Enhancement Mode Symbol Test conditions V DSS Tj = 25°C to 150°C v DGR T.J = 25°C to 150°C;’ R GS „ = 1.0 M£i


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    PDF IXTK33N45 IXTK33N50 33N50 33N45 00G4DD7 P 317 diode aa 113