smd code book L2
Abstract: 340 mmic
Text: GaAs MMIC CGY 340 Data Sheet • • • • • • • • • • WLL transmit upconverter IC for 3.5 GHz Fully Integrated IF Variable Gain Amplifier, Mixer, LO-Buffer, three RF Amplifier Stages and a switched Attenuator High Conversion Gain: typ. 29 dB
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MW-16
GPW05969
smd code book L2
340 mmic
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4.7 ohm resistor
Abstract: HMC535LP4 HMC535LP4E LM2903MX MMBT3904
Text: HMC535LP4 / 535LP4E v00.0405 Typical Applications Features Phase-Locked Oscillator for: Pout: +9 dBm • VSAT Radio Phase Noise: -110 dBc/Hz @100 KHz Typ. • Point-to-Point & Point-to-Multi-Point Radio • Test Equipment & Industrial Controls Single Supply: +5V @ 340 mA
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HMC535LP4
535LP4E
HMC535LP4
HMC535LP4E
MMBT3904,
LM2903MX
4.7 ohm resistor
LM2903MX
MMBT3904
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GaAs HEMTs X band
Abstract: X-band Gan Hemt 0.18um AlGaN/GaN HEMTs x-band mmic lna alcon X-band diode gp 421 LNA x-band
Text: High Linearity, Robust, AlGaN-GaN HEMTs for LNA & Receiver ICs P. Parikh, Y. Wu, M. Moore, P. Chavarkar, U. Mishra, Cree Lighting Company, 340 Storke Road, Goleta, CA 93117. R. Neidhard, L. Kehias, T. Jenkins, Air Force Research Laboratory, Sensors Directorate, WPAFB, OH 45433.
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sdars
Abstract: HS350 marking 340 mmic
Text: GaAs INTEGRATED CIRCUIT µPG2310TK GaAs MMIC LOW NOISE AMPLIFIER FOR SATELLITE RADIO DESCRIPTION The µPG2310TK is a GaAs MMIC LNA for SDARS Satellite Digital Audio Radio Services . High Gain and Low Distortion suit to driver stage amplifier for Satellite Radio Antenna.
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PG2310TK
PG2310TK
PG2310TK-E2
PG2310TK-E2-A
sdars
HS350
marking 340 mmic
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HS350
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2310TK GaAs MMIC LOW NOISE AMPLIFIER FOR SATELLITE RADIO DESCRIPTION The µPG2310TK is a GaAs MMIC LNA for SDARS Satellite Digital Audio Radio Services . High Gain and Low Distortion suit to driver stage amplifier for Satellite Radio Antenna.
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PG2310TK
PG2310TK
PG2310TK-E2
PG2310TK-E2-A
HS350
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EMM5717
Abstract: No abstract text available
Text: EMM5717YF Ku / K Band Low Noise Amplifier MMIC FEATURES •Low Noise Figure : NF = 2.0dB Typ. @ f=18 GHz •High Associated Gain : Gas = 23dB ( Typ.) @ f=18 GHz •Broad Band : 12.7 - 24.0 GHz •High Output Power : P1dB = 17.5dBm ( Typ. ) •Impedance Matched Zin/Zout = 50ohm
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EMM5717YF
50ohm
EMM5717YF
EMM5717
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EMM5717
Abstract: YD 1102
Text: EMM5717YF Ku / K Band Low Noise Amplifier MMIC FEATURES •Low Noise Figure : NF = 2.0dB Typ. @ f=18 GHz •High Associated Gain : Gas = 23dB ( Typ.) @ f=18 GHz •Broad Band : 12.7 - 24.0 GHz •High Output Power : P1dB = 17.5dBm ( Typ. ) •Impedance Matched Zin/Zout = 50ohm
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EMM5717YF
50ohm
EMM5717YF
EMM5717
YD 1102
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EMM5717
Abstract: EMM5717YF EMM5717YFT 337 SMD 544 mmic JESD22-A114-C J-STD-020B Sumitomo 1076
Text: EMM5717YF Ku / K Band Low Noise Amplifier MMIC FEATURES •Low Noise Figure : NF = 2.0dB Typ. @ f=18 GHz •High Associated Gain : Gas = 23dB ( Typ.) @ f=18 GHz •Broad Band : 12.7 - 24.0 GHz •High Output Power : P1dB = 17.5dBm ( Typ. ) •Impedance Matched Zin/Zout = 50ohm
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EMM5717YF
50ohm
EMM5717YF
EMM5717
EMM5717YFT
337 SMD
544 mmic
JESD22-A114-C
J-STD-020B
Sumitomo 1076
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6 FMR 40
Abstract: No abstract text available
Text: AM011037WM-BM-R AM011037WM-FM-R February 2010 Rev 2 DESCRIPTION AMCOM’s AM011037WM-BM-R and AM011037WM-FM-R are part of the GaAs pHEMT MMIC power amplifier series. These high efficiency MMICs are 2-stage GaAs pHEMT power amplifiers biased at +8V. The input and
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AM011037WM-BM-R
AM011037WM-FM-R
AM011037WM-BM-R
AM011037WM-FM-R
38dBm)
AM011037WM-BM/FM-R
6 FMR 40
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AM011037WM-BM/FM-R
Abstract: amcomusa mmics
Text: AM011037WM-BM-R AM011037WM-FM-R July 2010 Rev 3 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM011037WM-BM/FM-R is part of the GaAs pHEMT MMIC power amplifier series. This high efficiency MMIC is a 2-stage GaAs pHEMT power amplifier biased at +8V. The input and inter-stage matching networks cover
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AM011037WM-BM-R
AM011037WM-FM-R
AM011037WM-BM/FM-R
38dBm)
AM011037WM-BM/FM-R
10mils
1000pF,
50ohms,
10ohms,
amcomusa
mmics
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RAYTHEON
Abstract: RMPA2451 RMPA2451-58
Text: RMPA2451-58 2.4-2.5 GHz GaAs MMIC Power Amplifier Description Features Raytheon RMPA2451-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB or
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RMPA2451-58
RMPA2451-58
RAYTHEON
RMPA2451
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EMM5717YF
Abstract: EMM5717 KU 612 544 mmic ED-4701 "ku band" amplifier
Text: ES/EMM5717YF Preliminary Ku / K Band Low Noise Amplifier MMIC FEATURES •Low Noise Figure : NF = 2.0dB Typ. @ f=18 GHz •High Associated Gain : Gas = 23dB ( Typ.) @ f=18 GHz •Broad Band : 12.7 - 24.0 GHz •High Output Power : P1dB = 17.5dBm ( Typ. )
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ES/EMM5717YF
50ohm
EMM5717YF
1906B,
EMM5717
KU 612
544 mmic
ED-4701
"ku band" amplifier
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RAYTHEON
Abstract: 50W 4 GHz linear power amplifier
Text: # 425430398 Description Features Absolute Ratings Electrical Characteristics1 RMPA2451-58 2.4-2.5 GHz GaAs MMIC Power Amplifier PRODUCT INFORMATION Raytheon RF Components’ RMPA2451-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The
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RMPA2451-58
RMPA2451-58
RAYTHEON
50W 4 GHz linear power amplifier
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MAR-8A
Abstract: No abstract text available
Text: MMIC Amplifier MAR-8ASM+ Typical Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions or to view GRAPHS. Definitions: Input Return Loss = -S11 dB Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB)
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25degC
MAR-8A
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murata 2.4 GHz filter
Abstract: pin configuration of 8251 RMPA2451B-58
Text: RMPA2451B-58 2.4-2.5 GHz GaAs MMIC Power Amplifier Description Features Raytheon RMPA2451B-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB or
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RMPA2451B-58
RMPA2451B-58
murata 2.4 GHz filter
pin configuration of 8251
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EMM5717X
Abstract: No abstract text available
Text: ES/EMM5717X Preliminary Ku / K Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 1.5dB Typ. @ f=12.7GHz ・High Associated Gain : Gas = 25dB ( Typ.) ・Broad Band : 12.7 - 24.0 GHz ・High Output Power : P1dB = 18dBm ( Typ. ) ・Impedance Matched Zin/Zout = 50Ω
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18dBm
EMM5717X
ES/EMM5717X
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EMM5717X
Abstract: EMM5717
Text: EMM5717X Ku / K Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 1.5dB Typ. @ f=12.7GHz ・High Associated Gain : Gas = 25dB ( Typ.) ・Broad Band : 12.7 - 24.0 GHz ・High Output Power : P1dB = 18dBm ( Typ. ) ・Impedance Matched Zin/Zout = 50Ω
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EMM5717X
18dBm
EMM5717X
EMM5717
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73D31
Abstract: 26c311 EMM5717 EMM5717X D4444 9311H 4CC3 11D-9 A311D 6661D
Text: EMM5717X Ku / K Band Low Noise Amplifier MMIC FEATURES Low Noise Figure : NF = 1.5dB Typ. @ f=12.7GHz High Associated Gain : Gas = 25dB ( Typ.) Broad Band : 12.7 - 24.0 GHz High Output Power : P1dB = 18dBm ( Typ. ) Impedance Matched Zin/Zout = 50Ω
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EMM5717X
18dBm
EMM5717X
73D31
26c311
EMM5717
D4444
9311H
4CC3
11D-9
A311D
6661D
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MAR-8A
Abstract: No abstract text available
Text: MMIC Amplifier MAR-8A+ Typical Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions or to view GRAPHS. Definitions: Input Return Loss = -S11 dB Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB)
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25degC
MAR-8A
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RAYTHEON
Abstract: RMPA2451 RMPA2451-58
Text: Raytheon Raytheon Commercial Electronics RMPA2451-58 2.4 to 2.5 GHz GaAs MMIC Power Amplifier Description Raytheon RMPA2451-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz
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RMPA2451-58
RMPA2451-58
RAYTHEON
RMPA2451
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9715
Abstract: RAYTHEON RMPA2451 RMPA2451-53
Text: Raytheon Raytheon Commercial Electronics RMPA2451-53 2.4 to 2.5 GHz GaAs MMIC Power Amplifier Description Raytheon RMPA2451-53 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB
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RMPA2451-53
RMPA2451-53
9715
RAYTHEON
RMPA2451
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7447
Abstract: 7404
Text: MAR-8ASM Performance Data NOTE:Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: MAR-8ASM Reference Data:RDF-994 S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER: PORT IN=-30dBm, PORT OUT=0dBm; Icc=36mA; Vcc=3.97V@Temp.=+25degC
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RDF-994
-30dBm,
25degC
7447
7404
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9323 12515
Abstract: 7447 7404 MAR8
Text: MAR-8A Performance Data NOTE:Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: MAR-8A Reference Data:RDF-994 S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER: PORT IN=-30dBm, PORT OUT=0dBm; Icc=36mA; Vcc=3.97V@Temp.=+25degC
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RDF-994
-30dBm,
25degC
9323 12515
7447
7404
MAR8
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Untitled
Abstract: No abstract text available
Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC7149 v01.1113 10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz AMPLIFIERS - LINEAR & POWER - CHIP
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HMC7149
HMC7149
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