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    AM206541TM-SN-R

    Abstract: amcomusa
    Text: Gallium Nitride MMIC 12W 2.0 – 6.0 GHz Power Amplifier AM206541TM-SN May 2014 Rev 1 DESCRIPTION AMCOM’s AM206541TM-SN-R is a broadband GaN MMIC power amplifier. It has 26dB gain, and 41 dBm output power over the 2.0 to 6.5GHz band. The AM206541TM-SN-R is in a ceramic package with a flange and straight


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    PDF AM206541TM-SN AM206541TM-SN-R 41dBm equ1000pF, 50ohms, 10ohms, 540mA 900mA Vds12pin) amcomusa

    AM072239UM-2H

    Abstract: No abstract text available
    Text: Power Amplifier Module 700 – 2200MHz, 30dB, 8W AM072239UM-2H January 2014 Rev1 DESCRIPTION AMCOM’s AM072239UM-2H is a broadband GaAs Power Amplifier module. AM072240UM-2H is a wideband power amplifier designed for Wireless Internet Access, Wireless Local Loop, and Two Way Radio. It operates from 700 MHz


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    PDF 2200MHz, AM072239UM-2H AM072239UM-2H AM072240UM-2H 37dBm) 39dBm

    AM357039UM-2H

    Abstract: No abstract text available
    Text: Power Amplifier Module 3.5 – 7.0GHz, 21dB, 8W AM357039UM-2H January 2014 Rev1 DESCRIPTION AMCOM’s AM357039UM-2H is a broadband GaAs Power Amplifier Module. It has a nominal CW performance of 21dB small signal gain, and 39dBm 8W saturated output power


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    PDF AM357039UM-2H AM357039UM-2H 39dBm 39dBm

    74047

    Abstract: AM005MH2-BI-R
    Text: HiFET High Voltage GaAs FET AM005MH2-BI-R August 2007 v.3 DESCRIPTION AMCOM’s AM005MH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a


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    PDF AM005MH2-BI-R AM005MH2-BI-R 74047

    AM053010WM-89

    Abstract: No abstract text available
    Text: DC-4.0GHz HBT Amplifier AM053010WM-89 DATASHEET Premininary DATASHEET DESCRIPTION AMCOM’s AM053010WM-89 is a HBT amplifier designed for broadband microwave applications. It operates from DC to 4.0GHz and delivers a minimum P1dB of 10dBm and a minimum small signal gain of


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    PDF AM053010WM-89 10dBm OT-89 Retu0871 1000pF 18ohm 115ohm 200pF

    Untitled

    Abstract: No abstract text available
    Text: AM284233MM-BM January 2003 Rev. 0 DESCRIPTION AMCOM’s AM284233MM-BM is part of the GaAs MMIC power amplifier series. It has 36 dB gain, 32.5 dBm output power over the 2.8 to 4.2 GHz band. This MMIC is in a ceramic package with both RF and DC leads at the


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    PDF AM284233MM-BM AM284233MM-BM 50-ohm 1000mA,

    AM072MX-QF

    Abstract: PT13 122-37-9 AMCOM AM072MX
    Text: AM072MX-QF Plastic Packaged GaAs Power FET September 2002 Rev. 3 DESCRIPTION AMCOM’s AM072MX-QF is a part of the QF series of GaAs MESFETs. This part has a total gate width of 7.2mm. The AM072MX-QF is designed for high power microwave applications, operating up to 6 GHz. The QF


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    PDF AM072MX-QF AM072MX-QF 34dBm PT13 122-37-9 AMCOM AM072MX

    AM020331SF-2D

    Abstract: mhz rf amplifier module class a power amplifier
    Text: The RF Power House 225 - 300 MHz 2 Watt Power Amplifier AM020331SF-2D DESCRIPTION AMCOM's AM020331SF-2D is a UHF Band Power Amplifier designed for FEATURES high power RF applications. It operates from 225 to 300 MHz and delivers a • Class A Power Amplifier


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    PDF AM020331SF-2D AM020331SF-2D mhz rf amplifier module class a power amplifier

    AM048MX-QF

    Abstract: 982 Series AMCOM AM048MX
    Text: AM048MX-QF Plastic Packaged GaAs Power FET September 2002 Rev. 3 DESCRIPTION AMCOM’s AM048MX-QF is a part of the QF series of GaAs MESFETs. This part has a total gate width of 4.8mm. The AM048MX-QF is designed for high power microwave applications, operating up to 6 GHz. The QF


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    PDF AM048MX-QF AM048MX-QF Vds46 982 Series AMCOM AM048MX

    AM052510WM-89

    Abstract: No abstract text available
    Text: DC-3.0GHz HBT Amplifier AM052510WM-89 Datasheet Premininary Datasheet DESCRIPTION AMCOM’s AM052510WM-89 is a HBT amplifier designed for broadband microwave applications. It operates from DC to 3.0GHz and delivers a minimum P1dB of 13dBm and a minimum small signal gain of


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    PDF AM052510WM-89 13dBm OT-89 10dBm 1000pF 39ohm 200pF AM052510WM-89

    AM343635SF-2H

    Abstract: No abstract text available
    Text: The RF Power House 3.4 - 3.6 GHz 3 Watt Power Amplifier AM343635SF-2H DESCRIPTION AMCOM’s AM343635SF-2H is a 2-stage power amplifier in aluminum housing with input and output SMA connectors. It has 18dB gain, 36dBm output power over the 3.4 to 3.6 GHz Band.


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    PDF AM343635SF-2H AM343635SF-2H 36dBm 36dBm AM343635SF-

    AM183031WM-Q4

    Abstract: No abstract text available
    Text: AM183031WM-Q4 March 2004 Rev. 0 DESCRIPTION AMCOM’s AM183031WM-Q4 is part of the GaAs MMIC power amplifier series. It has 30 dB gain, 31 dBm output power over the 1.8 to 3.4 GHz band. This MMIC is in a plastic package with both RF and DC leads at the bottom


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    PDF AM183031WM-Q4 AM183031WM-Q4 50-ohm 670mA,

    Untitled

    Abstract: No abstract text available
    Text: AM142540MM-BM-R November 2007 Rev. 6 DESCRIPTION AMCOM’s AM142540MM-BM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs HIFET MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.4 to


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    PDF AM142540MM-BM-R AM142540MM-BM-R 40dBm) AM132740MM-BM. MMIC01

    AM150MX-CU-R

    Abstract: No abstract text available
    Text: AM150MX-CU-R April 2010 Rev 8 High Power GaAs Power FET DESCRIPTION AMCOM’s AM150MX-CU-R is a part of the CU series of GaAs MESFETs. This part has a total gate width of 15mm. The AM150MX-CU-R is designed for high power microwave applications, operating up to 6GHz. The CU


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    PDF AM150MX-CU-R AM150MX-CU-R

    Untitled

    Abstract: No abstract text available
    Text: AM024MX-QF-R Plastic Packaged GaAs Power FET April 2010 Rev 2 DESCRIPTION AM024MX-QF-R is a GaAs MESFET with a total gate width of 2.4mm. It is RoHS compliant Denoted by –R . The AM024MX-QF-R is designed for high power microwave applications, operating up to 6GHz. The QF


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    PDF AM024MX-QF-R AM024MX-QF-R

    Untitled

    Abstract: No abstract text available
    Text: AM304031WM-BM-R August 2007 Rev. 5 DESCRIPTION AMCOM’s AM304031WM-BM is part of the GaAs MMIC power amplifier series. It has 31 dB gain, 32 dBm output power over the 2.6 to 4.6 GHz band. This MMIC is in a ceramic package with both RF and DC leads at the bottom


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    PDF AM304031WM-BM-R AM304031WM-BM 50-ohm 670mA,

    Untitled

    Abstract: No abstract text available
    Text: AM142540MM-BM-R AM142540MM-FM-R Aug 2010 Rev 8 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM142540MM-BM/FM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.4 to 2.5GHz.


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    PDF AM142540MM-BM-R AM142540MM-FM-R AM142540MM-BM/FM-R 400MHz 40dBm) AM142540MM-BM/FM-R

    Untitled

    Abstract: No abstract text available
    Text: AM300MX-CU-R High Power GaAs Power FET August 2007 Rev. 3 DESCRIPTION AMCOM’s AM300MX-CU-R is part of the CU series of GaAs MESFETs. This part has a total gate width of 30mm. The AM300MX-CU-R is designed for high power microwave applications, operating up to 6 GHz. The CU


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    PDF AM300MX-CU-R AM300MX-CU-R

    Untitled

    Abstract: No abstract text available
    Text: Ceramic Packaged GaAs Power pHEMT AM030WX-BH-R March 2010 Rev 0 DC-10 GHz DESCRIPTION AMCOM’s AM030WX-BH-R is part of the BH series of GaAs pHEMTs. This part has a total gate width of 6mm. The AM030WX-BH-R is designed for high power microwave applications, operating up to 10 GHz. The


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    PDF AM030WX-BH-R DC-10 AM030WX-BH-R

    Untitled

    Abstract: No abstract text available
    Text: AM204437WM-BM-R AM204437WM-FM-R December 2008 Rev. 3 DESCRIPTION AMCOM’s AM204437WM-BM-R and AM204437WM-FM-R are part of the GaAs MMIC power amplifier series. Both MMICs have 30dB gain, 37dBm output power over the 2.2 to 4.2 GHz band. These MMIC are in a ceramic


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    PDF AM204437WM-BM-R AM204437WM-FM-R AM204437WM-BM-R AM204437WM-FM-R 37dBm 10mils 100mA, 300mA 1400mA

    AM011037WM-BM/FM-R

    Abstract: amcomusa mmics
    Text: AM011037WM-BM-R AM011037WM-FM-R July 2010 Rev 3 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM011037WM-BM/FM-R is part of the GaAs pHEMT MMIC power amplifier series. This high efficiency MMIC is a 2-stage GaAs pHEMT power amplifier biased at +8V. The input and inter-stage matching networks cover


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    PDF AM011037WM-BM-R AM011037WM-FM-R AM011037WM-BM/FM-R 38dBm) AM011037WM-BM/FM-R 10mils 1000pF, 50ohms, 10ohms, amcomusa mmics

    Untitled

    Abstract: No abstract text available
    Text: AM030MH4-BI-R HiFET High Voltage GaAs FET August 2007 Rev. 1 DESCRIPTION AMCOM’s AM030MH4-BI-R is part of the BH series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This


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    PDF AM030MH4-BI-R AM030MH4-BI-R

    Untitled

    Abstract: No abstract text available
    Text: AM009023WM-BM-R AM009023WM-FM-R July 2011 Rev 2 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM009023WM-BM/FM-R is an ultra broadband GaAs MMIC power amplifier. It has 22dB gain, and 25dBm output power over the 0.05 to 9GHz band. The noise figure is 4.5dB up to 4GHz. This MMIC is in a ceramic


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    PDF AM009023WM-BM-R AM009023WM-FM-R AM009023WM-BM/FM-R 25dBm AM009023WM-FM-R AM009023WM-BM-R 50MHz 25dBm AM009023WM-BM/FM-R 140mA

    Untitled

    Abstract: No abstract text available
    Text: AM244236WM-BM-R March 2008 Rev. 2 DESCRIPTION AMCOM’s AM244236WM-BM-R is part of the GaAs MMIC power amplifier series. It has 31dB gain, 36dBm output power over the 2.4 to 4.2 GHz band. This MMIC is in a ceramic package with both RF and DC leads at the bottom level of the package to facilitate low-cost SMT assembly to the PC board. This MMIC is RoHS compliant.


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    PDF AM244236WM-BM-R AM244236WM-BM-R 36dBm 50-ohm 1500mA, 10mils 125mA, 275mA 1100mA