AM206541TM-SN-R
Abstract: amcomusa
Text: Gallium Nitride MMIC 12W 2.0 – 6.0 GHz Power Amplifier AM206541TM-SN May 2014 Rev 1 DESCRIPTION AMCOM’s AM206541TM-SN-R is a broadband GaN MMIC power amplifier. It has 26dB gain, and 41 dBm output power over the 2.0 to 6.5GHz band. The AM206541TM-SN-R is in a ceramic package with a flange and straight
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AM206541TM-SN
AM206541TM-SN-R
41dBm
equ1000pF,
50ohms,
10ohms,
540mA
900mA
Vds12pin)
amcomusa
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AM072239UM-2H
Abstract: No abstract text available
Text: Power Amplifier Module 700 – 2200MHz, 30dB, 8W AM072239UM-2H January 2014 Rev1 DESCRIPTION AMCOM’s AM072239UM-2H is a broadband GaAs Power Amplifier module. AM072240UM-2H is a wideband power amplifier designed for Wireless Internet Access, Wireless Local Loop, and Two Way Radio. It operates from 700 MHz
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2200MHz,
AM072239UM-2H
AM072239UM-2H
AM072240UM-2H
37dBm)
39dBm
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AM357039UM-2H
Abstract: No abstract text available
Text: Power Amplifier Module 3.5 – 7.0GHz, 21dB, 8W AM357039UM-2H January 2014 Rev1 DESCRIPTION AMCOM’s AM357039UM-2H is a broadband GaAs Power Amplifier Module. It has a nominal CW performance of 21dB small signal gain, and 39dBm 8W saturated output power
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AM357039UM-2H
AM357039UM-2H
39dBm
39dBm
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74047
Abstract: AM005MH2-BI-R
Text: HiFET High Voltage GaAs FET AM005MH2-BI-R August 2007 v.3 DESCRIPTION AMCOM’s AM005MH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a
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AM005MH2-BI-R
AM005MH2-BI-R
74047
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AM053010WM-89
Abstract: No abstract text available
Text: DC-4.0GHz HBT Amplifier AM053010WM-89 DATASHEET Premininary DATASHEET DESCRIPTION AMCOM’s AM053010WM-89 is a HBT amplifier designed for broadband microwave applications. It operates from DC to 4.0GHz and delivers a minimum P1dB of 10dBm and a minimum small signal gain of
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AM053010WM-89
10dBm
OT-89
Retu0871
1000pF
18ohm
115ohm
200pF
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Untitled
Abstract: No abstract text available
Text: AM284233MM-BM January 2003 Rev. 0 DESCRIPTION AMCOM’s AM284233MM-BM is part of the GaAs MMIC power amplifier series. It has 36 dB gain, 32.5 dBm output power over the 2.8 to 4.2 GHz band. This MMIC is in a ceramic package with both RF and DC leads at the
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AM284233MM-BM
AM284233MM-BM
50-ohm
1000mA,
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AM072MX-QF
Abstract: PT13 122-37-9 AMCOM AM072MX
Text: AM072MX-QF Plastic Packaged GaAs Power FET September 2002 Rev. 3 DESCRIPTION AMCOM’s AM072MX-QF is a part of the QF series of GaAs MESFETs. This part has a total gate width of 7.2mm. The AM072MX-QF is designed for high power microwave applications, operating up to 6 GHz. The QF
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AM072MX-QF
AM072MX-QF
34dBm
PT13
122-37-9
AMCOM
AM072MX
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AM020331SF-2D
Abstract: mhz rf amplifier module class a power amplifier
Text: The RF Power House 225 - 300 MHz 2 Watt Power Amplifier AM020331SF-2D DESCRIPTION AMCOM's AM020331SF-2D is a UHF Band Power Amplifier designed for FEATURES high power RF applications. It operates from 225 to 300 MHz and delivers a • Class A Power Amplifier
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AM020331SF-2D
AM020331SF-2D
mhz rf amplifier module
class a power amplifier
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AM048MX-QF
Abstract: 982 Series AMCOM AM048MX
Text: AM048MX-QF Plastic Packaged GaAs Power FET September 2002 Rev. 3 DESCRIPTION AMCOM’s AM048MX-QF is a part of the QF series of GaAs MESFETs. This part has a total gate width of 4.8mm. The AM048MX-QF is designed for high power microwave applications, operating up to 6 GHz. The QF
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AM048MX-QF
AM048MX-QF
Vds46
982 Series
AMCOM
AM048MX
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AM052510WM-89
Abstract: No abstract text available
Text: DC-3.0GHz HBT Amplifier AM052510WM-89 Datasheet Premininary Datasheet DESCRIPTION AMCOM’s AM052510WM-89 is a HBT amplifier designed for broadband microwave applications. It operates from DC to 3.0GHz and delivers a minimum P1dB of 13dBm and a minimum small signal gain of
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AM052510WM-89
13dBm
OT-89
10dBm
1000pF
39ohm
200pF
AM052510WM-89
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AM343635SF-2H
Abstract: No abstract text available
Text: The RF Power House 3.4 - 3.6 GHz 3 Watt Power Amplifier AM343635SF-2H DESCRIPTION AMCOM’s AM343635SF-2H is a 2-stage power amplifier in aluminum housing with input and output SMA connectors. It has 18dB gain, 36dBm output power over the 3.4 to 3.6 GHz Band.
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AM343635SF-2H
AM343635SF-2H
36dBm
36dBm
AM343635SF-
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AM183031WM-Q4
Abstract: No abstract text available
Text: AM183031WM-Q4 March 2004 Rev. 0 DESCRIPTION AMCOM’s AM183031WM-Q4 is part of the GaAs MMIC power amplifier series. It has 30 dB gain, 31 dBm output power over the 1.8 to 3.4 GHz band. This MMIC is in a plastic package with both RF and DC leads at the bottom
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AM183031WM-Q4
AM183031WM-Q4
50-ohm
670mA,
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Untitled
Abstract: No abstract text available
Text: AM142540MM-BM-R November 2007 Rev. 6 DESCRIPTION AMCOM’s AM142540MM-BM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs HIFET MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.4 to
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AM142540MM-BM-R
AM142540MM-BM-R
40dBm)
AM132740MM-BM.
MMIC01
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AM150MX-CU-R
Abstract: No abstract text available
Text: AM150MX-CU-R April 2010 Rev 8 High Power GaAs Power FET DESCRIPTION AMCOM’s AM150MX-CU-R is a part of the CU series of GaAs MESFETs. This part has a total gate width of 15mm. The AM150MX-CU-R is designed for high power microwave applications, operating up to 6GHz. The CU
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AM150MX-CU-R
AM150MX-CU-R
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Untitled
Abstract: No abstract text available
Text: AM024MX-QF-R Plastic Packaged GaAs Power FET April 2010 Rev 2 DESCRIPTION AM024MX-QF-R is a GaAs MESFET with a total gate width of 2.4mm. It is RoHS compliant Denoted by –R . The AM024MX-QF-R is designed for high power microwave applications, operating up to 6GHz. The QF
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AM024MX-QF-R
AM024MX-QF-R
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Untitled
Abstract: No abstract text available
Text: AM304031WM-BM-R August 2007 Rev. 5 DESCRIPTION AMCOM’s AM304031WM-BM is part of the GaAs MMIC power amplifier series. It has 31 dB gain, 32 dBm output power over the 2.6 to 4.6 GHz band. This MMIC is in a ceramic package with both RF and DC leads at the bottom
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AM304031WM-BM-R
AM304031WM-BM
50-ohm
670mA,
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Untitled
Abstract: No abstract text available
Text: AM142540MM-BM-R AM142540MM-FM-R Aug 2010 Rev 8 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM142540MM-BM/FM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.4 to 2.5GHz.
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AM142540MM-BM-R
AM142540MM-FM-R
AM142540MM-BM/FM-R
400MHz
40dBm)
AM142540MM-BM/FM-R
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Untitled
Abstract: No abstract text available
Text: AM300MX-CU-R High Power GaAs Power FET August 2007 Rev. 3 DESCRIPTION AMCOM’s AM300MX-CU-R is part of the CU series of GaAs MESFETs. This part has a total gate width of 30mm. The AM300MX-CU-R is designed for high power microwave applications, operating up to 6 GHz. The CU
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AM300MX-CU-R
AM300MX-CU-R
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Untitled
Abstract: No abstract text available
Text: Ceramic Packaged GaAs Power pHEMT AM030WX-BH-R March 2010 Rev 0 DC-10 GHz DESCRIPTION AMCOM’s AM030WX-BH-R is part of the BH series of GaAs pHEMTs. This part has a total gate width of 6mm. The AM030WX-BH-R is designed for high power microwave applications, operating up to 10 GHz. The
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AM030WX-BH-R
DC-10
AM030WX-BH-R
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Untitled
Abstract: No abstract text available
Text: AM204437WM-BM-R AM204437WM-FM-R December 2008 Rev. 3 DESCRIPTION AMCOM’s AM204437WM-BM-R and AM204437WM-FM-R are part of the GaAs MMIC power amplifier series. Both MMICs have 30dB gain, 37dBm output power over the 2.2 to 4.2 GHz band. These MMIC are in a ceramic
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AM204437WM-BM-R
AM204437WM-FM-R
AM204437WM-BM-R
AM204437WM-FM-R
37dBm
10mils
100mA,
300mA
1400mA
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AM011037WM-BM/FM-R
Abstract: amcomusa mmics
Text: AM011037WM-BM-R AM011037WM-FM-R July 2010 Rev 3 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM011037WM-BM/FM-R is part of the GaAs pHEMT MMIC power amplifier series. This high efficiency MMIC is a 2-stage GaAs pHEMT power amplifier biased at +8V. The input and inter-stage matching networks cover
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AM011037WM-BM-R
AM011037WM-FM-R
AM011037WM-BM/FM-R
38dBm)
AM011037WM-BM/FM-R
10mils
1000pF,
50ohms,
10ohms,
amcomusa
mmics
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Untitled
Abstract: No abstract text available
Text: AM030MH4-BI-R HiFET High Voltage GaAs FET August 2007 Rev. 1 DESCRIPTION AMCOM’s AM030MH4-BI-R is part of the BH series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This
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AM030MH4-BI-R
AM030MH4-BI-R
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Untitled
Abstract: No abstract text available
Text: AM009023WM-BM-R AM009023WM-FM-R July 2011 Rev 2 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM009023WM-BM/FM-R is an ultra broadband GaAs MMIC power amplifier. It has 22dB gain, and 25dBm output power over the 0.05 to 9GHz band. The noise figure is 4.5dB up to 4GHz. This MMIC is in a ceramic
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AM009023WM-BM-R
AM009023WM-FM-R
AM009023WM-BM/FM-R
25dBm
AM009023WM-FM-R
AM009023WM-BM-R
50MHz
25dBm
AM009023WM-BM/FM-R
140mA
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Untitled
Abstract: No abstract text available
Text: AM244236WM-BM-R March 2008 Rev. 2 DESCRIPTION AMCOM’s AM244236WM-BM-R is part of the GaAs MMIC power amplifier series. It has 31dB gain, 36dBm output power over the 2.4 to 4.2 GHz band. This MMIC is in a ceramic package with both RF and DC leads at the bottom level of the package to facilitate low-cost SMT assembly to the PC board. This MMIC is RoHS compliant.
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AM244236WM-BM-R
AM244236WM-BM-R
36dBm
50-ohm
1500mA,
10mils
125mA,
275mA
1100mA
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