AM072MX-QF
Abstract: PT13 122-37-9 AMCOM AM072MX
Text: AM072MX-QF Plastic Packaged GaAs Power FET September 2002 Rev. 3 DESCRIPTION AMCOM’s AM072MX-QF is a part of the QF series of GaAs MESFETs. This part has a total gate width of 7.2mm. The AM072MX-QF is designed for high power microwave applications, operating up to 6 GHz. The QF
|
Original
|
PDF
|
AM072MX-QF
AM072MX-QF
34dBm
PT13
122-37-9
AMCOM
AM072MX
|
AM072MX-CB
Abstract: No abstract text available
Text: The RF Power House Low-Cost Ceramic Packaged GaAs Power FET AM072MX-CB V. 1, January 2001 DESCRIPTION AMCOM's AM072MX-CB is part of the CB Series GaAs MESFETs. This FEATURES device has a total gate width of 7.2 mm. The AM072MX-CB is designed for • High Frequency Applications
|
Original
|
PDF
|
AM072MX-CB
AM072MX-CB
AN500)
|
Untitled
Abstract: No abstract text available
Text: AM072MX-CU-R High Power GaAs Power FET August 2007 Rev. 7 DESCRIPTION AM072MX-CU-R is a GaAs MESFET in high-power ceramic CU package . This part has a total gate width of 7.2mm. The AM072MX-CU-R is designed for high power microwave applications, operating up to 6 GHz. The CU
|
Original
|
PDF
|
AM072MX-CU-R
AM072MX-CU-R
34dBm
|
Untitled
Abstract: No abstract text available
Text: AM072MX-QF-R Plastic Packaged GaAs Power FET April 2010 Rev 2 DESCRIPTION AM072MX-QF-R is a GaAs MESFET with a total gate width of 7.2mm. It is RoHS compliant Denoted by –R . The AM072MX-QF-R is designed for high power microwave applications, operating up to 6GHz. The QF
|
Original
|
PDF
|
AM072MX-QF-R
AM072MX-QF-R
34dBm
|
AM072MX-CU-R
Abstract: No abstract text available
Text: AM072MX-CU-R April 2010 Rev 8 High Power GaAs Power FET DESCRIPTION AM072MX-CU-R is a GaAs MESFET in high-power ceramic CU package. This part has a total gate width of 7.2mm. The AM072MX-CU-R is designed for high power microwave applications, operating up to 6GHz. The CU
|
Original
|
PDF
|
AM072MX-CU-R
AM072MX-CU-R
34dBm
|
ANG-S21
Abstract: AM072MX-CU GaAs S2p
Text: AM072MX-CU High Power GaAs Power FET September 2002 Rev. 3 DESCRIPTION AMCOM’s AM072MX-CU is a part of the CU series of GaAs MESFETs. This part has a total gate width of 7.2mm. The AM072MX-CU is designed for high power microwave applications, operating up to 6 GHz. The CU
|
Original
|
PDF
|
AM072MX-CU
AM072MX-CU
34dBm
Rem-108
ANG-S21
GaAs S2p
|
Untitled
Abstract: No abstract text available
Text: AM072MX-QF-R Plastic Packaged GaAs Power FET August 2007, Rev. 1 DESCRIPTION AM072MX-QF-R is a GaAs MESFET with a total gate width of 7.2mm. It is RoHS compliant Denoted by –R . The AM072MX-QF-R is designed for high power microwave applications, operating up to 6 GHz. The QF
|
Original
|
PDF
|
AM072MX-QF-R
AM072MX-QF-R
34dBm
|
Untitled
Abstract: No abstract text available
Text: AM072MX-QG-R August 2007 Rev. 2 Plastic Packaged GaAs Power FET DESCRIPTION AM072MX-QG-R is a GaAs MESFET in QG plastic package for SMT automatic assembly. This part has a total gate width of 7.2mm. The AM072MX-QG-R is designed for high power microwave applications,
|
Original
|
PDF
|
AM072MX-QG-R
AM072MX-QG-R
|
812 946
Abstract: AM072MX-QG L 0946
Text: AM072MX-QG Plastic Packaged GaAs Power FET September 2002 Rev. 3 DESCRIPTION AMCOM’s AM072MX-QG is a part of the QG series of GaAs MESFETs. This part has a total gate width of 7.2mm. The AM072MX-QG is designed for high power microwave applications, operating up to 6 GHz. The QG
|
Original
|
PDF
|
AM072MX-QG
AM072MX-QG
812 946
L 0946
|
Untitled
Abstract: No abstract text available
Text: ISO 9001:2008 Certified AMCOM Communications, Inc. Product Brochure April 2015 ISO 9001:2008 Certified Registration # 220501.1Q ISO 9001:2008 Certified Section 1 - AMCOM Communications, Inc. AMCOM was established in December 1996 by a group of microwave engineers experienced in both
|
Original
|
PDF
|
|