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    343 TRANSISTOR Search Results

    343 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    343 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    55 ic Sot-343

    Abstract: marking 17 sot343 START499ETR st P 1806 START499E start499etr spice
    Text: START499ETR NPN RF silicon transistor Features • High efficiency ■ High gain ■ Linear and non linear operation ■ Transition frequency 42 GHz ■ Ultra miniature SOT-343 SC70 lead free package SOT-343 Applications ■ PA for dect or PHS ■ PA stage for wireless LAN


    Original     		PDF START499ETR OT-343 START499ETR OT-343 55 ic Sot-343 marking 17 sot343 st P 1806 START499E start499etr spice

    4066 spice model

    Abstract: SOT343 lna Spice Parameter, Bipolar Transistor 8948 transistor npn d 2078 marking 900
    Text: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ


    Original     		PDF MBC13900/D MBC13900 OT-343) MBC13900T1 OT-343 MBC13900 SC-70 4066 spice model SOT343 lna Spice Parameter, Bipolar Transistor 8948 transistor npn d 2078 marking 900

    318M

    Abstract: LL1608-FH MBC13900 MBC13900T1 marking r4 SOT343 SOT343 lna
    Text: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ


    Original     		PDF MBC13900/D MBC13900 OT-343) MBC13900T1 OT-343 MBC13900 SC-70 318M LL1608-FH MBC13900T1 marking r4 SOT343 SOT343 lna

    matsushita conduit

    Abstract: matsushita electrical conduit nais relay 24V high speed LC2H nais relay 24V r relay EN61000-4-2 EN61000-4-3 EN61000-6-2 EN61000-6-4 EN61010-1
    Text: LC2H LC2H Counters DIN HALF SIZE LCD COUNTER Features 1. 8.7 mm .343 inch Character Height previously 7 mm Easy-to-read character height increased from 7 mm to 8.7 mm .276 inch to .343 inch. Panel mounting type One-touch installation type 8.7mm .343inch


    Original     		PDF 343inch EN60947-1 EN60947-3 matsushita conduit matsushita electrical conduit nais relay 24V high speed LC2H nais relay 24V r relay EN61000-4-2 EN61000-4-3 EN61000-6-2 EN61000-6-4 EN61010-1

    OPA343

    Abstract: No abstract text available
    Text: OPA 234 OPA 4 OPA343 OPA2343 OPA4343 3 343 OPA 4 343 www.ti.com SINGLE-SUPPLY, RAIL-TO-RAIL OPERATIONAL AMPLIFIERS microAmplifier Series FEATURES APPLICATIONS ● ● ● ● ● ● ● ● DRIVING A/D CONVERTERS ● PCMCIA CARDS ● DATA ACQUISITION


    Original     		PDF OPA343 OPA2343 OPA4343 OPA343 500mV

    constant current diode

    Abstract: E-1071-343 46288 SSRPC OPTO ISOLATOR high temperature "Constant Current diode" 74x128
    Text: Solid State Remote Power Controller E-1071-343 Description The E-T-A Solid State Remote Power Controller E-1071-343 is a double relay with protective function both for resistive and inductive DC 48 V loads. It is particularly suitable to control upward/downward


    Original     		PDF E-1071-343 E-1071-343 constant current diode 46288 SSRPC OPTO ISOLATOR high temperature "Constant Current diode" 74x128

    NE76118

    Abstract: NE76118-T1 NE76118-T2
    Text: GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER • LOW COST MINIATURE PLASTIC PACKAGE SOT-343 25 4 20 Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN: 13.5 dB typical at 2 GHz • LG = 1.0 µm, WG = 400 µm • TAPE & REEL PACKAGING DESCRIPTION The NE76118 is a low cost gallium arsenide metal semiconductor field effect transistor housed in a miniature (SOT-343)


    Original     		PDF OT-343) NE76118 24-Hour NE76118-T1 NE76118-T2

    E6327

    Abstract: transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327
    Text: Transistor Pin Out Diodes and Transistors Fig. 2 Fig. 1 1 Fig. 3 Fig. 4 3 3 3 1 2 1 2 3 1 2 SOT-343 3 3 2 3 1 4 2 2 2 1 TO-220-3-1 TO-220-2-2 SOT-89 SOT-23 Pkg Pin 1 Pin 2 Pin 3 Pin 4 SOT-23 B E C — SOT-89 B C E — SOT-343 B E C E TSFP-4 1 TSLP-2-7 NEW!


    Original     		PDF OT-343 O-220-3-1 O-220-2-2 OT-89 OT-23 OT-23 OT-89 OT-343 SC-74 SC-79 E6327 transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327

    LL1608-FH

    Abstract: MBC13900 MBC13900NT1 MBC13900T1 Functional details of ic 4066 K 2545
    Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1


    Original     		PDF MBC13900/D MBC13900 OT-343) MBC13900T11 MBC13900NT1 MBC13900 SC-70 LL1608-FH MBC13900NT1 MBC13900T1 Functional details of ic 4066 K 2545

    0338 transistor

    Abstract: marking r4 SOT343
    Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1


    Original     		PDF MBC13900/D MBC13900 MBC13900T11 MBC13900NT1 OT-343) OT-343 OT-343 0338 transistor marking r4 SOT343

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1, 05/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1 1


    Original     		PDF MBC13900/D MBC13900 MBC13900T11 MBC13900NT1 OT-343) OT-343 OT-343

    4066 spice model

    Abstract: LL1608-FH MBC13900 MBC13900T1
    Text: Freescale Semiconductor, Inc. Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package


    Original     		PDF MBC13900/D MBC13900 OT-343) MBC13900T1 OT-343 MBC13900 SC-70 4066 spice model LL1608-FH MBC13900T1

    Untitled

    Abstract: No abstract text available
    Text: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial


    Original     		PDF 2N2857UB MIL-PRF-19500/343 2N2857UB 2N2857. T4-LDS-0223-1,

    BGB420

    Abstract: No abstract text available
    Text: Preliminary BGB420 Active Biased Transistor BGB420 Features • For high gain low noise amplifiers • Ideal for wideband applications, cellular telephones, cordless telephones, SATTV and high frequency oscillators • Gma=17.5dB at 1.8GHz • Small SOT-343 package


    Original     		PDF BGB420 BGB420 OT-343 BFP420. GPS05605

    HBFP-0450

    Abstract: 35-689 HBFP-0450-BLK CMP10 CMP12 55 ic Sot-343 HBFP0450TR1
    Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz


    Original     		PDF HBFP-0450 SC-70 OT-343) HBFP-0450 5968-5434E 5988-0133EN 35-689 HBFP-0450-BLK CMP10 CMP12 55 ic Sot-343 HBFP0450TR1

    Untitled

    Abstract: No abstract text available
    Text: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,


    Original     		PDF 2N2857 MIL-PRF-19500/343 2N2857 2N2857. T4-LDS-0223,

    BJT BF 167

    Abstract: kf 203 e 011 transistor HBFP0450TR1 L 3705
    Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz


    Original     		PDF HBFP-0450 SC-70 OT-343) HBFP-0450 packa00 5968-2070E BJT BF 167 kf 203 e 011 transistor HBFP0450TR1 L 3705

    transistor kf 469

    Abstract: CMP10 CMP12 HBFP-0420 transistor bf 198 transistor Bf 981
    Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Ideal for High Gain, Low Noise Applications Description Surface Mount Plastic Package/ SOT-343 SC-70 Hewlett Packard’s HBFP-0420 is a high performance isolated


    Original     		PDF HBFP-0420 OT-343 SC-70) HBFP-0420 SC-70 OT-343) 5968-0129E transistor kf 469 CMP10 CMP12 transistor bf 198 transistor Bf 981

    SGA8343Z

    Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		PDF SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS100909 SGA8343Z-EVB4 1575MHz MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series

    2N2857

    Abstract: 2N2857 JANTXV
    Text: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,


    Original     		PDF 2N2857 MIL-PRF-19500/343 2N2857. T4-LDS-0223, 2N2857 JANTXV

    IC 74196

    Abstract: kf 982 CMP16 2 GHz BJT CMP10 HBFP-0405 ku-band oscillator CMP68 r1565 marking 53 Sot-343
    Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0405 Features • Ideal for High Gain, Low Current Applications Description Surface Mount Plastic Package/ SOT-343 SC-70 Hewlett Packard’s HBFP-0405 is a high performance isolated


    Original     		PDF HBFP-0405 OT-343 SC-70) HBFP-0405 SC-70 OT-343) 5968-0140E IC 74196 kf 982 CMP16 2 GHz BJT CMP10 ku-band oscillator CMP68 r1565 marking 53 Sot-343

    Untitled

    Abstract: No abstract text available
    Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz


    Original     		PDF HBFP-0450 SC-70 OT-343) HBFP-0450 5968-2070E

    SGA8343z

    Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		PDF SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot

    4066 spice model

    Abstract: marking r4 SOT343 RF LNA" 1 to 2 GHz" spice
    Text: Freescale Semiconductor Technical Data MBC13900/D Rev. 0, 6/2002 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information 1 Introduction The MBC13900 is a high performance transistor


    Original     		PDF MBC13900/D MBC13900 MBC13900T1 OT-343) OT-343 MBC13900 SC-70 318M-01, 4066 spice model marking r4 SOT343 RF LNA" 1 to 2 GHz" spice