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Catalog Datasheet	MFG & Type	Document Tags	PDF
NDT454P Abstract: No abstract text available Text: National June 1996 Semiconductor" N D T454P P-Channel Enhancement M ode Field Effect Transistor General Description Features These P-Channel e n h a n ce m e n t m o d e e ffect tra n s is to rs p ro p rie ta ry , hig h are pro d u ce d cell d e nsity, using	OCR Scan	NDT454P NDT454P OT-223	PDF
NDT3055 Abstract: No abstract text available Text: t* September 1996 National Semiconductor" N D T3055 N-Channel Enhancement M ode Field Effect Transistor General Description Features P ow er SO T N-C hannel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are pro d u ce d using N a tio n a l's	OCR Scan	NDT3055 NDT3055 OT-223	PDF
NDT453N Abstract: No abstract text available Text: September 1996 National Semiconductor" N D T453N N-Channel Enhancement M ode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	NDT453N NDT453N OT-223	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR NC7SZ32 TinyLogic™ UHS 2-Input OR Gate General Description Features The NC7SZ32 is a single 2-Input OR Gate from Fairchild’s Ultra High Speed Series of TinyLogic™ in the space saving SOT23 package. The device is fabricated with advanced	OCR Scan	NC7SZ32 NC7SZ32 34bTL	PDF
NDT2955 SOT223 Abstract: NDT2955 E125 Text: September 1996 National Semiconductor" N D T2955 P-Channel Enhancement M ode Field Effect Transistor General Description Pow er SOT P -C h a n n e l Features power • -2 .5 A , -6 0 V . RDS 0N = 0 .3 £ i @ V GS = -1 0V. fie ld e ffe c t tr a n s is to r s a re p ro d u c e d u s in g N a tio n a l's	OCR Scan	NDT2955 OT-22rrent NDT2955 OT-223 NDT2955 SOT223 E125	PDF
NDT451N Abstract: No abstract text available Text: S e ptem be r 1996 National Semiconductor" N D T451N N-Channel Enhancement M ode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	NDT451N NDT451N OT-223	PDF
irf640 Abstract: IRF240 RF640 IRF 1640 IRF640 applications note PULSE GENERATOR IRF640-643 IRF241 IRF242 IRF243 IRF641 Text: I FAIRCHILD SEMICONDUCTOR fl4 dÈ J 3 4 b U 7 4 DDETflfiS □ IRF240-243/IRF640-643 T - 3 Ï - H N-Channel Power MOSFETs, 18 A, 150-200 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-2Q4AE TO-220AB These devices are n-channel, enhancement mode, power	OCR Scan	34bTti74 IRF240-243/IRF640-643 IRF240 IRF241 IRF242 IRF243 O-220AB IRF640 IRF641 IRF642 RF640 IRF 1640 IRF640 applications note PULSE GENERATOR IRF640-643 IRF243	PDF
34B SOT Abstract: NDT452P c3 sot223 Text: September 1996 National f i Semiconductor"' N D T452P P-Channel Enhancement M ode Field Effect Transistor G eneral Description Features P ow er SO T P-Channel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n sisto rs are pro d u ce d using N a tio n a l's	OCR Scan	NDT452P OT-223. NDT452P OT-223 34B SOT c3 sot223	PDF
2n4208 Abstract: FTS04124 27575 2n4239 4235 schlumberger 2N4123 2N4124 2N4125 2N4126 Text: FAIRCHILD SEMICONDUCTOR " ~S4 F e J\| 34LTL74 00B7S71 T 3469674 FAIRCHILD SEMICONDUCTOR 84D 27571 2N4123/FTS04123 2N4124/FTS04124 f a ip c h il d A Schlum berger C om pany NPN Small Signal General Purpose Am plifiers & Switches • • • • . . . 25 V Min (2N/FTS04124)	OCR Scan	34LTL74 00B7S71 2N4123/FTS04123 2N4124/FTS04124 O-236AA/AB O-236AA/AB 2N4237/2N4238 2N4239 2n4208 FTS04124 27575 2n4239 4235 schlumberger 2N4123 2N4124 2N4125 2N4126	PDF
FZ 300 R 06 KL Abstract: 34B SOT NDT410EL L-253 Text: August 1 996 National Semiconductor" N DT410EL N-Channel Logic Level Enhancement M ode Field Effect Transistor Features General Description Power SOT N-Channel logic level enhancem ent mode power field effect transistors are produced using N ational's proprietary, high cell density, DMOS	OCR Scan	NDT410EL NDT410EL OT-223 FZ 300 R 06 KL 34B SOT L-253	PDF
NDT3055L Abstract: 6SS4 NDT3055 Text: S e ptem be r 1996 N ational f Semiconductor"' i N D T3055L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features Power SOT logic level N-Channel enhancem ent m ode field effect transistors are produced using National's proprietary, high cell density, DMOS	OCR Scan	NDT3055L NDT3055L OT-223 6SS4 NDT3055	PDF
LAL 2.25 Abstract: NDT451 NDT451AN TRANSISTOR b72 Text: Jul y 1996 National f Semiconductor" i NDT451 AN N-Channel Enhancement M ode Field Effect Transistor G eneral Description Features These N-C hannel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are pro d u ce d using N a tio n a l's	OCR Scan	NDT451 NDT451AN OT-223 LAL 2.25 TRANSISTOR b72	PDF