9015B
Abstract: 9014b C 9015b a3101 C 9014B
Text: 9015B 9015B Silicon PNP Epitaxial Transistor Description :The 9015B is designed for use in pre-amplifier of low level and low noise Features: ●Excellent hFE Linearity ●Complementary to 9014B Chip Appearance Chip Size 350umx350um Chip Thickness 210±20um
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9015B
9015B
9014B
350um
350um
110um
110um
100um
100um
9014b
C 9015b
a3101
C 9014B
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transistor bc846
Abstract: BC846 BC856
Text: BC846 BC846 Silicon NPN Epitaxial Transistor Description :The BC846is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC856 Chip Appearance Chip Size 350umx350um Chip Thickness 210±20um
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BC846
BC846
BC846is
BC856
350um
350um
110um
110um
100um
100um
transistor bc846
BC856
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Untitled
Abstract: No abstract text available
Text: epitex Φ3 MOLD LED LAMP L670-33V Opto-Device & Custom LED Lead Pb Free Product – RoHS Compliant L670-33V Infrared LED Lamp L670-33V is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a high power radiation of typical 8mW with a peak wavelength at 670nm.
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L670-33V
L670-33V
670nm.
350umx350um
670nm
J-6512
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9014b
Abstract: 9015B C 9014B C 9015b SAT Line Amplifier 9014b transistor
Text: 9014B 9014B Silicon NPN Epitaxial Transistor Description :The 9014B is designed for use in pre-amplifier of low level and low noise Features: ●Excellent hFE Linearity ●Complementary to 9015B Chip Appearance Chip Size 350umx350um Chip Thickness 210±20um
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Original
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9014B
9014B
9015B
350um
350um
110um
110um
100um
100um
9015B
C 9014B
C 9015b
SAT Line Amplifier
9014b transistor
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transistor A1015
Abstract: A1015 A1015 PNP TRANSISTOR A1015 equivalent transistor pnp a1015 ic a1015 c1815 pnp A1015 DATASHEET c1815 pnp a1015
Text: A1015 A1015 Silicon PNP Epitaxial Transistor Description: The A1015 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to C1815 Chip Appearance
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A1015
A1015
C1815
350um
350um
110um
110um
100um
100um
transistor A1015
A1015 PNP TRANSISTOR
A1015 equivalent
transistor pnp a1015
ic a1015
c1815 pnp
A1015 DATASHEET
c1815
pnp a1015
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transistor C1815
Abstract: C1815 A1015 npn c1815 transistor C1815 NPN Transistor NPN C1815 C1815 equivalent ic c1815 c1815 symbol npn TRANSISTOR c1815
Text: C1815 C1815 Silicon NPN Epitaxial Transistor Description : The C1815 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to A1015 Chip Appearance
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C1815
C1815
A1015
350um
350um
110um
110um
100um
100um
transistor C1815
A1015 npn
c1815 transistor
C1815 NPN Transistor
NPN C1815
C1815 equivalent
ic c1815
c1815 symbol
npn TRANSISTOR c1815
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Untitled
Abstract: No abstract text available
Text: epitex Φ3 MOLD LED LAMP L670-36V Opto-Device & Custom LED L670-36V Infrared LED Lamp L670-36V is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a high power radiation of typical 8mW with a peak wavelength at 670nm.
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Original
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PDF
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L670-36V
L670-36V
670nm.
350umx350um
670nm
J-6512
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BC846
Abstract: BC856
Text: BC856 BC856 Silicon PNP Epitaxial Transistor Description :The BC856is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC846 Chip Appearance Chip Size 350umx350um Chip Thickness 210±20um
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Original
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PDF
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BC856
BC856
BC856is
BC846
350um
350um
110um
110um
100um
100um
BC846
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Untitled
Abstract: No abstract text available
Text: epitex Φ3 MOLD LED LAMP L670-36V Opto-Device & Custom LED Lead Pb Free Product – RoHS Compliant L670-36V Infrared LED Lamp L670-36V is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a high power radiation of typical 8mW with a peak wavelength at 670nm.
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Original
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PDF
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L670-36V
L670-36V
670nm.
350umx350um
670nm
J-6512
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