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    A1015 Search Results

    A1015 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UE36A10152000T Amphenol Communications Solutions 56G QSFP-DD single SMT connector, GXT plating Visit Amphenol Communications Solutions
    UE36A10153000T Amphenol Communications Solutions 56G QSFP-DD single SMT connector, Gold plating Visit Amphenol Communications Solutions
    TPS7A1015PDSER Texas Instruments 300-mA low-IQ ultra-low-dropout (LDO) (70 mV at 300 mA) linear regulator 6-WSON -40 to 125 Visit Texas Instruments Buy
    TPS7A1015PYKAR Texas Instruments 300-mA low-IQ ultra-low-dropout (LDO) (70 mV at 300 mA) linear regulator 5-DSBGA -40 to 125 Visit Texas Instruments Buy
    TPS7A1015PDSET Texas Instruments 300-mA low-IQ ultra-low-dropout (LDO) (70 mV at 300 mA) linear regulator 6-WSON -40 to 125 Visit Texas Instruments Buy
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    A1015 Price and Stock

    Bulgin SA1015

    CONTACT SKT 16-22AWG NKL
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    DigiKey SA1015 Cut Tape 3,990 1
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    Newark SA1015 Bulk 4,000 1
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    onsemi KSA1015YTA

    TRANS PNP 50V 0.15A TO92-3
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    DigiKey KSA1015YTA Ammo Pack 2,000 2,000
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    Avnet Americas KSA1015YTA Ammo Pack 12,000
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    Rochester Electronics KSA1015YTA 422,968 1
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    TME KSA1015YTA 1,656 1
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    Avnet Silica KSA1015YTA 10,000 11 Weeks 2,000
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    EBV Elektronik KSA1015YTA 11 Weeks 2,000
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    Flip Electronics KSA1015YTA 2,000
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    Texas Instruments TPS7A1015PDSET

    IC REG LINEAR 1.5V 300MA 6WSON
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    DigiKey TPS7A1015PDSET Digi-Reel 980 1
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    TPS7A1015PDSET Cut Tape 980 1
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    TPS7A1015PDSET Reel 750 250
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    Bourns Inc PTV09A-1015U-B203

    POT 20K OHM 1/20W CARBON LINEAR
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    DigiKey PTV09A-1015U-B203 Tray 971 1
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    Avnet Americas PTV09A-1015U-B203 Tray 14 Weeks 1,000
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    Avnet Abacus PTV09A-1015U-B203 17 Weeks 1,000
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    Master Electronics PTV09A-1015U-B203
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    Amphenol Communications Solutions UE36A10152000T

    56G QSFP-DD SINGLE SMT CONNECTOR
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    DigiKey UE36A10152000T Cut Tape 416 1
    • 1 $17.95
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    UE36A10152000T Digi-Reel 416 1
    • 1 $17.95
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    • 100 $12.6878
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    UE36A10152000T Reel 180 180
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    A1015 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    A1015 Fairchild Semiconductor LOW FREQUENCY AMPLIFIER Original PDF
    A1015 Hi-Sincerity Mocroelectronics PNP EPITAXIAL PLANAR TRANSISTOR Original PDF
    A1015 Panasonic Photo Interrupters Original PDF
    A1015 Philips Semiconductors PNP general purpose transistor Original PDF
    A1015 Unisonic Technologies PNP EPITAXIAL SILICON TRANSISTOR Original PDF
    A1015 Weitron PNP General Purpose Transistors Original PDF
    A1015 Micro Electronics PNP SILICON TRANSISTOR Scan PDF
    A1015 Toshiba PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER) Scan PDF
    A1015LT1 Jiangsu Changjiang Electronics Technology TRANSISTOR PNP Original PDF
    A1015LT1 Weitron TRANSISTOR (PNP) Original PDF
    A1015LT1-SOT-23 Jiangsu Changjiang Electronics Technology TRANSISTOR PNP Original PDF

    A1015 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A1015 gr

    Abstract: transistor A1015 GR A1015 transistor A1015 a1015 transistor Transistor TO-92 A1015 A1015 y A1015 PNP TRANSISTOR A1015 TO92 equivalent transistor A1015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO-92 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO 3.BASE Value Units


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    A1015 -100mA, -10mA 30MHz A1015 gr transistor A1015 GR A1015 transistor A1015 a1015 transistor Transistor TO-92 A1015 A1015 y A1015 PNP TRANSISTOR A1015 TO92 equivalent transistor A1015 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR


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    OT-23 A1015 C1815 -10mA 30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR( PNP ) TO—92 1.EMITTER FEATURES 2.COLLECTOR Power dissipation PCM : 0.4 W(Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage


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    A1015 30MHz 270TYP 050TYP PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage


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    A1015 -100mA, -10mA 30MHz PDF

    A1015LT1

    Abstract: A1015L
    Text: A1015LT1 A1015LT1 TRANSISTOR PNP * “G” Lead(Pb)-Free SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 TJ, Tstg: -55 0. 95 0. 4 2. 9 Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range


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    A1015LT1 OT-23 -10mA 30MHz A1015LT1 A1015L PDF

    transistor BA sot-23

    Abstract: A1015LT1 pnp transistor A1 sot-23 SOT-23 marking BA A1015 ba marking sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors A1015LT1 SOT—23 ) TRANSISTOR( PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter Symbol 1.0 Power dissipation PCM :


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    OT-23 A1015LT1 OT--23 -100A 30MHz 037TPY 950TPY 550REF 022REF transistor BA sot-23 A1015LT1 pnp transistor A1 sot-23 SOT-23 marking BA A1015 ba marking sot-23 PDF

    A1015 gr

    Abstract: A1015 y transistor A1015 A1015 A1015 TO92 A1015 equivalent br a1015 A1015 DATASHEET A1015 gr W A1015-pnp
    Text: A1015 PNP General Purpose Transistors TO-92 P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage


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    A1015 30MHz 14-Feb-06 270TYP A1015 gr A1015 y transistor A1015 A1015 A1015 TO92 A1015 equivalent br a1015 A1015 DATASHEET A1015 gr W A1015-pnp PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.15 A ICM: Collector-base voltage


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    OT-23 A1015LT1 OT-23 -10mA 30MHz PDF

    A1015 BA

    Abstract: A1015 sot-23 c1815 pnp A1015 PNP TRANSISTOR A1015 transistor pnp a1015 marking BA sot-23 a1015 transistor c1815 SOT-23 transistor A1015
    Text: A1015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose: NF=1dB(Typ.) at f=1KHz


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    A1015 OT-23 OT-23 -150mA C1815 -100u -10mA 30MHz A1015 BA A1015 sot-23 c1815 pnp A1015 PNP TRANSISTOR A1015 transistor pnp a1015 marking BA sot-23 a1015 transistor c1815 SOT-23 transistor A1015 PDF

    a1015 transistor

    Abstract: transistor A1015 GR transistor A1015 A1015 PNP TRANSISTOR a1015 A1015 gr Transistor TO-92 A1015 transistor pnp a1015 a1015 TRANSISTOR pnp br a1015
    Text: A1015 Transistor PNP TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage


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    A1015 -100A, -100mA, -10mA 30MHz a1015 transistor transistor A1015 GR transistor A1015 A1015 PNP TRANSISTOR a1015 A1015 gr Transistor TO-92 A1015 transistor pnp a1015 a1015 TRANSISTOR pnp br a1015 PDF

    A1015 transistor

    Abstract: transistor A1015 br a1015 Transistor TO-92 A1015 transistor A1015 GR A1015 A1015 PNP TRANSISTOR A1015 gr A1015 y pnp a1015
    Text: TO-92 Plastic-Encapsulate Transistors PNP A1015 A1015 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range


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    A1015 -100mA, -10mA 30MHz A1015 transistor transistor A1015 br a1015 Transistor TO-92 A1015 transistor A1015 GR A1015 A1015 PNP TRANSISTOR A1015 gr A1015 y pnp a1015 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.15 A ICM: Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range


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    OT-23 A1015LT1 OT-23 -10mA 30MHz PDF

    transistor A1015 GR

    Abstract: br a1015 transistor A1015 a1015 transistor A1015 A1015 gr A1015 Y Transistor TO-92 A1015 A1015 equivalent A1015 PNP TRANSISTOR
    Text: A1015 A1015 TRANSISTOR PNP TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


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    A1015 -100mA, -10mA 30MHz transistor A1015 GR br a1015 transistor A1015 a1015 transistor A1015 A1015 gr A1015 Y Transistor TO-92 A1015 A1015 equivalent A1015 PNP TRANSISTOR PDF

    A1015

    Abstract: A1015GR A1015Y A1015-Y A1015-GR transistor a1015y A1015 gr A1015-GR H transistor A1015 A1015 equivalent
    Text: A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 2Collector 3Base J CLASSIFICATION OF hFE A Product-Rank


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    A1015 A1015-O A1015-Y A1015-GR 04-Mar-2011 -100mA, -10mA 30MHz A1015 A1015GR A1015Y A1015-Y A1015-GR transistor a1015y A1015 gr A1015-GR H transistor A1015 A1015 equivalent PDF

    transistor A1015

    Abstract: A1015 A1015 PNP TRANSISTOR A1015 equivalent transistor pnp a1015 ic a1015 c1815 pnp A1015 DATASHEET c1815 pnp a1015
    Text: A1015 A1015 Silicon PNP Epitaxial Transistor Description: The A1015 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to C1815 Chip Appearance


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    A1015 A1015 C1815 350um 350um 110um 110um 100um 100um transistor A1015 A1015 PNP TRANSISTOR A1015 equivalent transistor pnp a1015 ic a1015 c1815 pnp A1015 DATASHEET c1815 pnp a1015 PDF

    transistor C1815

    Abstract: C1815 A1015 npn c1815 transistor C1815 NPN Transistor NPN C1815 C1815 equivalent ic c1815 c1815 symbol npn TRANSISTOR c1815
    Text: C1815 C1815 Silicon NPN Epitaxial Transistor Description : The C1815 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to A1015 Chip Appearance


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    C1815 C1815 A1015 350um 350um 110um 110um 100um 100um transistor C1815 A1015 npn c1815 transistor C1815 NPN Transistor NPN C1815 C1815 equivalent ic c1815 c1815 symbol npn TRANSISTOR c1815 PDF

    A1015

    Abstract: A1015 equivalent transistor A1015 GR transistor A1015 A1015 y A1015 y equivalent a1015 transistor A1015 PNP TRANSISTOR pnp transistor a1015 A1015 GR
    Text: A1015 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURES Power dissipation o P CM :0.4 W (Tamb=25 C) Collector current I CM :-0.15 A Collector-base voltage V (BR)CBO :-50 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


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    A1015 A1015 A1015 equivalent transistor A1015 GR transistor A1015 A1015 y A1015 y equivalent a1015 transistor A1015 PNP TRANSISTOR pnp transistor a1015 A1015 GR PDF

    a1015 transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO-92 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO


    Original
    A1015 -100mA, -10mA 30MHz a1015 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units


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    A1015 -100mA, -10mA 30MHz PDF

    A1015 sot-23

    Abstract: No abstract text available
    Text: WILLAS FM120-M A1015 THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers TRANSISTOR• Batch


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    OT-23 OD-123+ FM120-M A1015 FM1200-M OT-23 OD-123H FM120-MH FM130-MH FM140-MH A1015 sot-23 PDF

    sa1015

    Abstract: A1015 gr A1015 GSA1015 GSC1815
    Text: CORPORATION G S A1015 ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B P NP E PITAX I AL P L ANAR TANSI STOR Description The A1015 is designed for use in driver stage of AF amplifier and general purpose applications. Features *Collector-Base Voltage: VCBO =-50V


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    A1015 2004/11/29B GSA1015 GSC1815 sa1015 A1015 gr A1015 GSC1815 PDF

    Untitled

    Abstract: No abstract text available
    Text: A1015LT1 A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 0. 4 0. 95 TJ, Tstg: -55 2. 9 Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range to +150


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    A1015LT1 OT-23 -10mA 30MHz PDF

    UMA1015AM

    Abstract: rf power detector voltage doubler
    Text: Philips Semiconductors Objective specification Low-power dual frequency synthesizer for radio communications U M A1015AM FEATURES GENERAL DESCRIPTION • Two fully programmable RF dividers up to 1.1 GHz The A1015AM is a low-power dual frequency synthesizer for radio communications which operates in


    OCR Scan
    UMA1015AM 711DB2fc. UMA1015AM rf power detector voltage doubler PDF

    A1015

    Abstract: A1015 y A1015 PNP TRANSISTOR br a1015 pnp a1015
    Text: M C C TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP FEATU R E S P cm; 0.4W (T a m b = 2 5 t) Icm: -0.15A /voltage V(BR)CBO: -5 0 V M S M M i a tofeltetoraga Junction temperature range Tj.Tstg: -55X2- to + 150°C ELECTRICAL CHARACTERISTICS (Tam b=25°C u n l e s s o t h e r w i s e


    OCR Scan
    A1015 -55X2- A1015 A1015 y A1015 PNP TRANSISTOR br a1015 pnp a1015 PDF