Contextual Info: White Electronic Designs W3H64M72E-XSBX PRELIMINARY* 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667*, 533, 400 „ Programmable CAS latency: 3, 4 or 5 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 22mm

W3H128M72

Abstract: W3H128M72E-XSBX W3H128M72E
Contextual Info: White Electronic Designs W3H128M72E-XSBX Advanced* 128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Package: „ CK/CK# Termination options available • 0 ohm, 20 ohm • 208 Plastic Ball Grid Array PBGA , 16 x 22mm

W3H64M64E

Contextual Info: White Electronic Designs W3H64M64E-XSBX 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Write latency = Read latency - 1* tCK „ Package: „ Commercial, Industrial and Military Temperature Ranges • 1.0mm pitch „

Contextual Info: W3H64M72E-XSBX W3H64M72E-XSBXF 512MB – 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  30% Space saving vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 22mm

84 FBGA

Abstract: W3H64M72E-XSBX fbga84 ccd400
Contextual Info: White Electronic Designs W3H64M72E-XSBX 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 22mm „ Organized as 64M x 72 • 1.0mm pitch „ Weight: W3H64M72E-XSBX - 2.5 grams typical

7410

Abstract: 7410E WED3C7410E16M-XBHX WED3C750A8M-200BX WED3C7558M-XBX 90Sn10Pb 63SN 37PB CBGA 255 motorola
Contextual Info: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache

CI 7410

Abstract: 7410 frequency divider PIN CONFIGURATION 7410 cga motorola 7410 transistor 7410 PC7410 Multi-Chip Modules motorola
Contextual Info: PC7410 Microprocessor + 2MByte L2-Cache Multi-Chip Module Fact Sheet Main Features • • • • • • PC7410 RISC microprocessor 16 Mbit of Synchronous Pipelined Burst SRAM configured as 256Kx72 L2-Cache Extended temperature modules 1.8V (Core)/2.5V (I/0) for industrial and military applications

D80008

Contextual Info: PRELIMINARY INFORMATION L9D340G64BG2 4.0 Gb, DDR3, 64 M x 64 Integrated Module IMOD Benefits FEATURES DDR3 Integrated Module [iMOD]: 1 00 1 enter-ter inated, u ull IO a age: 16 22 , 13 21 atri 2 1 all Matri all it : 1 00 S a e a ing oot rint er all en an ed, I edan e

Contextual Info: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache

Contextual Info: White Electronic Designs W3E32M72S-XSBX ADVANCED* 32Mx72 DDR SDRAM FEATURES „ Data rate = 200, 250, 266MHz „ Package: • BENEFITS „ • 208 Plastic Ball Grid Array PBGA , 16 x 22mm „ 2.5V ±0.2V core power supply „ 2.5V I/O (SSTL_2 compatible) „ Differential clock inputs (CK and CK#)

Contextual Info: W3E32M72S-XB3X 32Mx72 DDR SDRAM FEATURES GENERAL DESCRIPTION  Data rate = 200, 250, 266, 333Mbs* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.

L9D340G64BG2I15

Abstract: DDR3-1066 DDR3-1333 L9D340G64B L9D340G64BG2
Contextual Info: PRELIMINARY INFORMATION L9D340G64BG2 4.0 Gb, DDR3, 64 M x 64 Integrated Module IMOD Benefits FEATURES DDR3 Integrated Module [iMOD]: • Vcc=VccQ=1.5V ± 0.075V • 1.5V center-terminated, push/pull I/O • Package: 16mm x 22mm, 13 x 21 matrix w/ 271balls

Contextual Info: W3E32M72S-XSBX 32Mx72 DDR SDRAM FEATURES GENERAL DESCRIPTION  Data rate = 200, 250, 266, 333Mbs* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.

WED3C750A8M-200BX

Contextual Info: PowerPC 750 /8Mbit SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C7508M-200BX Features • • • A 200 MHz 750 RISC µProcessor 8 Mbit of Synchronous pipeline burst SRAM configured as 128Kx72 L2 Cache Extended temperature modules for industrial and military applications

18CO

Contextual Info: White Electronic Designs W3H64M64E-XSBX ADVANCED* 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 22mm  Organized as 64M x 64 • 1.0mm pitch

W332M72V-XSBX

Contextual Info: White Electronic Designs W332M72V-XSBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing

Contextual Info: White Electronic Designs W3H64M72E-XSBX ADVANCED* 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667*, 533, 400 „ Programmable CAS latency: 3, 4 or 5 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 22mm

W3E32M72S-XSBX

Contextual Info: White Electronic Designs W3E32M72S-XSBX 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266, 333Mbs 73% Space Savings vs. TSOP Package: • 44% Space Savings vs FPBGA • 208 Plastic Ball Grid Array PBGA , 16 x 22mm Reduced part count 2.5V ±0.2V core power supply

sram 1mbyte 3.3v

Abstract: 16x16 bga Multi-Chip Package MEMORY TQFP 100 PACKAGE footprint with or without underfill PC755B PCX755B
Contextual Info: PC755B Microprocessor + 1MByte L2-Cache Multi-Chip Module Fact Sheet Main Features • PC755B RISC microprocessor • 8 Mbit of Synchronous Pipelined Burst SRAM configured as 128Kx72 L2-Cache • Extended temperature modules 2.0V (Core)/3.3V (I/0) for industrial and military applications

DDR3 impedance

Abstract: 12 x 12 fbga thermal resistance DDR3 constraints at q209 96-ball FBGA FBGA DDR3 Q309
Contextual Info: FOR IMMEDIATE RELEASE Contact: March 4, 2009 LOGIC Devices announces details of its DDR3 iMOD development David Harrison, Director of Marketing 408 542-5424

Contextual Info: W3H128M72E-XSBX W3H128M72E-XNBX 1GB – 128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  56% space savings vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 22mm

PS-8000

Abstract: W3H64M64E W3H32M64E-XSBX
Contextual Info: White Electronic Designs W3H64M64E-XSBX ADVANCED* 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667*, 533, 400 „ Write latency = Read latency - 1* tCK „ Package: „ Commercial, Industrial and Military Temperature Ranges • 1.0mm pitch

Contextual Info: White Electronic Designs W3E32M72S-XSBX 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266MHz 73% Space Savings vs. TSOP Package: • 44% Space Savings vs FPBGA • 208 Plastic Ball Grid Array PBGA , 16 x 22mm Reduced part count 2.5V ±0.2V core power supply

Contextual Info: White Electronic Designs W3H128M72E-XSBX 128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400  Package:  CK/CK# Termination options available • 0 ohm, 20 ohm • 208 Plastic Ball Grid Array PBGA , 16 x 22mm  Posted CAS additive latency: 0, 1, 2, 3 or 4