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    W3E64M72S-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply


    Original     		PDF W3E64M72S-XBX 64Mx72 333Mbs 512MByte W3E64M72S-ESB W3E64M72S-XBX

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP


    Original     		PDF W3E64M72S-XSBX 64Mx72 333Mbs* 512MByte 333Mbs

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM FEATURES BENEFITS „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP


    Original     		PDF 64Mx72 333Mbs* W3E64M72S-XSBX 333Mbs

    W3E32M72S-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M72S-XBX 32Mx72 DDR SDRAM FEATURES „ Data rate = 200, 250, 266, 333Mbs „ Package: BENEFITS • 219 Plastic Ball Grid Array PBGA , 32 x 25mm „ 2.5V ±0.2V core power supply „ 2.5V I/O (SSTL_2 compatible) „ Differential clock inputs (CK and CK#)


    Original     		PDF W3E32M72S-XBX 32Mx72 333Mbs 333Mbs W3E32M72S-XBX

    Untitled

    Abstract: No abstract text available
    Text: W3E32M72S-XB3X 32Mx72 DDR SDRAM FEATURES GENERAL DESCRIPTION  Data rate = 200, 250, 266, 333Mbs* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.


    Original     		PDF W3E32M72S-XB3X 32Mx72 333Mbs* 256MByte 256MB

    Untitled

    Abstract: No abstract text available
    Text: W3E64M72S-XBX 64Mx72 DDR SDRAM GENERAL DESCRIPTION FEATURES The 512MByte 4Gb DDR SDRAM is a high-speed CMOS, dynamic random-access, memory using 9 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM.  Data rate = 200, 250, 266 and 333Mbs*


    Original     		PDF W3E64M72S-XBX 64Mx72 512MByte 333Mbs* 512MB

    Untitled

    Abstract: No abstract text available
    Text: W3E32M72S-XSBX 32Mx72 DDR SDRAM FEATURES GENERAL DESCRIPTION  Data rate = 200, 250, 266, 333Mbs* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.


    Original     		PDF W3E32M72S-XSBX 32Mx72 333Mbs* 256MByte 256MB 333Mbs 333Mbs, 333Mbs

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP


    Original     		PDF 64Mx72 333Mbs* 333Mbs

    VCCQ15

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX PRELIMINARY* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP


    Original     		PDF 64Mx72 333Mbs W3E64M72S-XSBX VCCQ15

    W3E32M72S-XSBX

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M72S-XSBX 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266, 333Mbs 73% Space Savings vs. TSOP Package: • 44% Space Savings vs FPBGA • 208 Plastic Ball Grid Array PBGA , 16 x 22mm Reduced part count 2.5V ±0.2V core power supply


    Original     		PDF W3E32M72S-XSBX 32Mx72 333Mbs 333Mbs W3E32M72S-XSBX

    tsop 66

    Abstract: W3E32M72S-XBX
    Text: White Electronic Designs W3E32M72S-XBX 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266, 333Mbs 40% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 34% I/O reduction vs TSOP 2.5V ±0.2V core power supply


    Original     		PDF W3E32M72S-XBX 32Mx72 333Mbs 333Mbs tsop 66 W3E32M72S-XBX

    Untitled

    Abstract: No abstract text available
    Text: W3E64M72S-XSBX 64Mx72 DDR SDRAM GENERAL DESCRIPTION FEATURES The 512MByte 4Gb DDR SDRAM is a high-speed CMOS, dynamic random-access, memory using 9 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM.  Data rate = 200, 250, 266 and 333Mbs*


    Original     		PDF W3E64M72S-XSBX 64Mx72 512MByte 333Mbs* 512MB 750ns, 333Mbs 950ns 950ns,

    Untitled

    Abstract: No abstract text available
    Text: W3E32M72S-XBX 32Mx72 DDR SDRAM FEATURES GENERAL DESCRIPTION  Data rate = 200, 250, 266, 333Mbs* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.


    Original     		PDF W3E32M72S-XBX 32Mx72 333Mbs* 256MByte 256MB 333Mbs 333Mbs, 333Mbs

    W3E32M72S-XSBX

    Abstract: Theta JC of FBGA
    Text: White Electronic Designs W3E32M72S-XSBX 32Mx72 DDR SDRAM FEATURES „ Data rate = 200, 250, 266, 333Mbs „ Package: BENEFITS „ • 44% Space Savings vs FPBGA • 208 Plastic Ball Grid Array PBGA , 16 x 22mm „ 2.5V ±0.2V core power supply „ 2.5V I/O (SSTL_2 compatible)


    Original     		PDF W3E32M72S-XSBX 32Mx72 333Mbs 333Mbs W3E32M72S-XSBX Theta JC of FBGA

    VCCQ15

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M16S-XSBX PRELIMINARY* 64Mx16 DDR SDRAM FEATURES BENEFITS „ DDR SDRAM rate = 200, 250, 266, 333* „ „ Package: „ • 60 Plastic Ball Grid Array PBGA , 10 x 12.5mm „ 1Gb upgrade to 512Mb 60 FBGA SDRAM „ 2.5V ±0.2V core power supply


    Original     		PDF 64Mx16 512Mb W3E64M16S-XSBX VCCQ15

    W3E32M64S-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M64S-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES „ DDR SDRAM rate = 200, 250, 266, 333Mb/s „ 41% SPACE SAVINGS vs. TSOP „ Package: „ Reduced part count • „ Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,


    Original     		PDF W3E32M64S-XBX 32Mx64 333Mb/s 625mm2 256MByte 333Mbs W3E32M64S-XBX

    16M x 16 DDR TSOP-66

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M64SA-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES „ DDR SDRAM rate = 200, 250, 266, 333Mb/s „ 41% SPACE SAVINGS vs. TSOP „ Package: „ Reduced part count • „ Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,


    Original     		PDF 32Mx64 333Mb/s 625mm2 W3E32M64SA-XBX datHz/266Mbs 166MHz/333Mbs 16M x 16 DDR TSOP-66

    Untitled

    Abstract: No abstract text available
    Text: W3E32M64S-XBX 32Mx64 DDR SDRAM FEATURES BENEFITS  DDR SDRAM rate = 200, 250, 266, 333Mb/s*  41% SPACE SAVINGS vs. TSOP  Package:  Reduced part count • 219 Plastic Ball Grid Array PBGA , 25mm x 25mm, 625mm2  Reduced trace lengths for lower parasitic capacitance


    Original     		PDF W3E32M64S-XBX 32Mx64 333Mb/s* 625mm2 256MByte 333Mbs, 333Mbs

    Untitled

    Abstract: No abstract text available
    Text: W3E64M16S-XSBX 64Mx16 DDR SDRAM FEATURES GENERAL DESCRIPTION  DDR SDRAM rate = 200, 250, 266, 333* The 128MByte 1Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 2 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.


    Original     		PDF W3E64M16S-XSBX 64Mx16 128MByte 512Mb 128MB 256MB -12mA

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M16S-XNBX 64Mx16 DDR SDRAM FEATURES „ DDR SDRAM rate = 200, 250, 266, 333* „ Package: BENEFITS „ • 60 Plastic Ball Grid Array PBGA , 10mm x 12.5mm x 1.5mm „ 1Gb upgrade to 512Mb 60 FBGA SDRAM „ 2.5V ±0.2V core power supply


    Original     		PDF 64Mx16 512Mb 200Mbs 250Mbs 266Mbs 333Mbs W3E64M16S-XNBX

    Sn63pB37 tds

    Abstract: W3E32M64S-XSBX TSOP66
    Text: White Electronic Designs W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES „ DDR SDRAM rate = 200, 250, 266, 333* „ Package: BENEFITS „ • 208 Plastic Ball Grid Array PBGA , 13 x 22mm „ 2.5V ±0.2V core power supply „ 2.5V I/O (SSTL_2 compatible) „ Differential clock inputs (CK and CK#)


    Original     		PDF W3E32M64S-XSBX 32Mx64 Sn63pB37 tds W3E32M64S-XSBX TSOP66

    Untitled

    Abstract: No abstract text available
    Text: W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES BENEFITS  DDR SDRAM rate = 200, 250, 266, 333*  73% Space Savings vs. FPBGA  Package: • 43% Space Savings vs TSOP • 208 Plastic Ball Grid Array PBGA , 13 x 22mm  Reduced part count  2.5V ±0.2V core power supply


    Original     		PDF W3E32M64S-XSBX 32Mx64

    Untitled

    Abstract: No abstract text available
    Text: W3E32M64S-XB3X 256 – 32Mx64 DDR SDRAM FEATURES BENEFITS  DDR SDRAM rate = 200, 250, 266, 333*  73% Space Savings vs. FPBGA  Package: • 43% Space Savings vs TSOP • 208 Plastic Ball Grid Array PBGA , 13 x 22mm  Reduced part count


    Original     		PDF W3E32M64S-XB3X 32Mx64 cycle55Â

    Untitled

    Abstract: No abstract text available
    Text: W3E32M64SA-XBX 32Mx64 DDR SDRAM FEATURES GENERAL DESCRIPTION  DDR SDRAM rate = 200, 250, 266, 333Mb/s* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 4 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.


    Original     		PDF W3E32M64SA-XBX 32Mx64 333Mb/s* 256MByte 625mm2 256MB 333Mbs, 333Mbs