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    3583 TRANSISTOR Search Results

    3583 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    3583 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CS 213 Polymer protection

    Abstract: No abstract text available
    Text: 19-3583; Rev 0; 2/05 0.6V to 5.5V Output, Parallelable, Average-Current-Mode DC-DC Controllers The MAX5060/MAX5061 pulse-width modulation PWM DC-DC controllers provide high-output-current capability in a compact package with a minimum number of external components. These devices utilize an average-current-mode control that enables optimal use of low


    Original     		PDF MAX5060/MAX5061 MAX5060) MAX5060/MAX5061 CS 213 Polymer protection

    TQFN28

    Abstract: No abstract text available
    Text: 19-3583; Rev 1; 6/05 0.6V to 5.5V Output, Parallelable, Average-Current-Mode DC-DC Controllers The MAX5060/MAX5061 pulse-width modulation PWM DC-DC controllers provide high-output-current capability in a compact package with a minimum number of external components. These devices utilize an average-current-mode control that enables optimal use of low


    Original     		PDF MAX5060/MAX5061 MAX5060) MAX5060/MAX5061 TQFN28

    FZ 75 capacitor 1500 6.3V

    Abstract: FZ 87 1500 6.3V MAX5060ATI MAX5060ETI MAX5061 MAX5061AUE MAX5061EUE
    Text: 19-3583; Rev 2; 7/05 0.6V to 5.5V Output, Parallelable, Average-Current-Mode DC-DC Controllers The MAX5060/MAX5061 pulse-width modulation PWM DC-DC controllers provide high-output-current capability in a compact package with a minimum number of external components. These devices utilize an average-current-mode control that enables optimal use of low


    Original     		PDF MAX5060/MAX5061 MAX5060) MAX5060/MAX5061 FZ 75 capacitor 1500 6.3V FZ 87 1500 6.3V MAX5060ATI MAX5060ETI MAX5061 MAX5061AUE MAX5061EUE

    TQFN28

    Abstract: No abstract text available
    Text: 19-3583; Rev 2; 7/05 KIT ATION EVALU E L B A IL AVA 0.6V to 5.5V Output, Parallelable, Average-Current-Mode DC-DC Controllers The MAX5060/MAX5061 pulse-width modulation PWM DC-DC controllers provide high-output-current capability in a compact package with a minimum number of external components. These devices utilize an average-current-mode control that enables optimal use of low


    Original     		PDF MAX5060/MAX5061 MAX5060) MAX5060/MAX5061 TQFN28

    MAX5060ATI

    Abstract: MAX5060ETI MAX5061 MAX5061AUE MAX5061EUE
    Text: 19-3583; Rev 2; 7/05 KIT ATION EVALU E L B A IL AVA 0.6V to 5.5V Output, Parallelable, Average-Current-Mode DC-DC Controllers The MAX5060/MAX5061 pulse-width modulation PWM DC-DC controllers provide high-output-current capability in a compact package with a minimum number of external components. These devices utilize an average-current-mode control that enables optimal use of low


    Original     		PDF MAX5060/MAX5061 MAX5060) MAX5060/MAX5061 MAX5060ATI MAX5060ETI MAX5061 MAX5061AUE MAX5061EUE

    power supply in ic 7915 circuit diagram

    Abstract: 0804HS OC205 pin configuration 7915 metal package 7915 7BAS
    Text: BURR-BROtüN CÔRP HE D |l7 3 1 3 b S DD13ÔÔ1 1 3583 B U R R - B R O W N j 3 E 3 | El 3583 | E I FEA T U R ES APPLICATIO N S • HIGH OUTPUT SW INGS. Up to ;I 4 0 V • PROGRAMMABLE POWER S U P P LY OUTPUT AM PLIFIER • LARGE LOAD CURREN TS. -75m A • PROTECTED OUTPUT STAGE. Automatic Therm al Shutofl


    OCR Scan     		PDF 0804HS 0805HS -150V) power supply in ic 7915 circuit diagram OC205 pin configuration 7915 metal package 7915 7BAS

    Untitled

    Abstract: No abstract text available
    Text: WSÈ 3583 FEATURES APPLICATIONS • HIGH OUTPUT SWINGS. Up to -140V • PROGRAMMABLE POWER SUPPLY OUTPUT AMPLIFIER • LARGE LOAD CURRENTS. -75mA • PROTECTED OUTPUT STAGE. Automatic Thermal Shutoff OPERATIONAL AMPLIFIERS High Voltage - High Current O P E R A T IO N A L A M P LIF IE R


    OCR Scan     		PDF -140V -75mA 0804H 0805H 0803M

    2N3584

    Abstract: 2n4240 2n 6021 SCHEMA 2N3583 3584 TCA 321 2n3585 3583
    Text: 2N 3584 ,* 2 N 358b 5^2I\I 3585 ^ 2 N 4240 NPN SILICON TRANSISTORS, TRIPLE DIFFUSED MESA * TRANSISTORS NPN SILICIUM, MESA TRIPLE DIFFUSES ^Preferred device Dispositif recommandé - High voltage linear power am plifier Amplification linéaire de puissance forte tension


    OCR Scan     		PDF CB-72 2N3584 2n4240 2n 6021 SCHEMA 2N3583 3584 TCA 321 2n3585 3583

    2n4240

    Abstract: 2N3585 MOTOROLA
    Text: M OTOROLA SC XSTRS/R F 15E D I GGäMMbS T | NPN 2N3583 thru 2N3585 2N4240 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N6420 thru 2N6422 1.0 AND 2.0 AMPERE COMPLEMENTARY MEDIUM POWER HIGH VOLTAGE POWER TRANSISTORS POWER TRANSISTORS COMPLEMENTARY SILICON 2 5 0 -5 0 0 V O L T S


    OCR Scan     		PDF 2N3583 2N3585 2N4240 2N6420 2N6422 2n4240 2N3585 MOTOROLA

    2N3534

    Abstract: 2N3583 2N3584 2N3533 2N3563 2N3503 2N3585 2n358s N3584 2N3584 NPN
    Text: 2N3583 2N3584 2N3585 NPN SILICON HIGH VOLTAGE POWER TRANSISTORS 35 watts at 25°C 5A peak collector current OUTLINE DIMENSIONS mm TO-66 915 min. - — - — 1 90 max. 1 1 Î 12.65 max. 0.85 0.70 T — — 8 .64 max ABSOLUTE MAXIMUM RATINGS v cso Collector-base voltage {lE — 0)


    OCR Scan     		PDF 2N3583 2N3584 2N3585 2N3503 2N3585 2N3S84 2N358S 2N35S3 2N3534 2N3533 2N3563 N3584 2N3584 NPN

    LTLS

    Abstract: 2n2891 2N 3055 BDX 78 2N5415 2N5416 BDY71 2n3738 2n3055 2n3053
    Text: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat cont NPN min PNP (V) (A) / Ib max m ax (Al (W) 11 (V) (A) (A) td + tr ts tf typ * ty p * max m ax m ax M> (us) ip*) s w itc llin g tran sisto rs


    OCR Scan     		PDF 2N5415 2N5416 CB-19 LTLS 2n2891 2N 3055 BDX 78 BDY71 2n3738 2n3055 2n3053

    TG 2309

    Abstract: 2N4240 TRANSISTOR BDX 538 2N35842N35852N4240 2N3585 TEXAS 2N3583 bdx 32 1N914 2N3583 2N3584
    Text: T Y P E S 2N3583. 2N 3 5 8 4. 2N3585. 2N4240 N -P -N S I L I C O N P O W E R T R A N S IS TO R S HIGH-VOLTAGE POWER TRANSISTORS DESIGNED FOR INDUSTRIAL AND M ILITA R Y APPLICATIONS • Min V b R CEO of 300 V (2N3585, 2N4240) • Typ VcE(sat) of 0.25 V at Iß = 125 mA, lc = 1 A


    OCR Scan     		PDF 2N3583. 2N3584. 2N3585, 2N4240 2N4240) 2N3583 2N3584 TG 2309 TRANSISTOR BDX 538 2N35842N35852N4240 2N3585 TEXAS 2N3583 bdx 32 1N914

    BDX 241

    Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


    OCR Scan     		PDF T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905

    2N3439 COMPLEMENTARY

    Abstract: 2N3440 COMPLEMENTARY 40346 D44VH D45VH D45VH1 D45VH10 D45VH4 D45VH7 D45VM1
    Text: THOnSON/ DISTRIBUTOR SÛE D m TD5t,ñ73 □0DS75B ^53 • TCSK Bipolar Power Transistors High-Speed Switching Continued •>FE T y p e No. v C E O (s u s > V C E X (SUS) V V D 45V H F A M IL Y ( p - n - p ) D45VH1 D45VH4 D45VH7 D45VH10 -3 0 -4 5 -6 0 -8 0


    OCR Scan     		PDF D45VH D44VH D45VH1 D45VH4 O-220AB D45VH7 D45VH10 D45VM D45VM1 D45VM4 2N3439 COMPLEMENTARY 2N3440 COMPLEMENTARY 40346

    J585

    Abstract: BUX38 transistor ESM 30 BU104 BU 103 A eb117 transistor BU 109 BUX20 bux65 ESM18
    Text: TO 66 CB 72 TO 3 (CB19) C B 183 T O 220 (CB 117) Power transistors N PN « Triple diffused » Fast switching Transistors de puissance N PN « Tripie diffusés » Commutation rapide T ype Case Boîtier Ptot (W) #VC EX VcEO (V) *C (A) h21 E / 'C min max (A)


    OCR Scan     		PDF TPu76 J585 BUX38 transistor ESM 30 BU104 BU 103 A eb117 transistor BU 109 BUX20 bux65 ESM18

    BDX32

    Abstract: bdx 540 2N3440 BUY71 2N 3585 TRANSISTOR BDX 538 crt 1700
    Text: BDX32 NPN SILICON POWER TRANSISTOR D E S IG N E D FOR H IG H V O L T A G E C .R .T . S C A N N IN G ► V C E X fating 1700 V • Current Rating — 4 Amps Continuous — 5 Amps Peak » Fast Switching — t f at 3.5 Amps 0.7 Microsecond Typical mechanical specification


    OCR Scan     		PDF BDX32 BDX32 bdx 540 2N3440 BUY71 2N 3585 TRANSISTOR BDX 538 crt 1700

    TRANSISTOR BDX 538

    Abstract: BDX31 BUY71 BDX 538 2N3440 transistor tip 31 tip 40 power transistor BDX32 bdx 32 TIP 50 transistor
    Text: BDX31 NPN SILICON POWER TRANSISTOR • Designed for High Voltage C .R .T. Scanning • • V c e x Rating 2 2 0 0 V Current Rating — 4 Amps Continuous — 5 Amps Peak • Fast Switching — tf at 3.5 Amps 0.7 Microsecond Typical absolute maximum ratings a t 25 °C ambient temperature


    OCR Scan     		PDF BDX31 TRANSISTOR BDX 538 BDX31 BUY71 BDX 538 2N3440 transistor tip 31 tip 40 power transistor BDX32 bdx 32 TIP 50 transistor

    tt 2194

    Abstract: LTLS 2n3054 2N5415 2N2243 aa2n BUX54 2N2192 2N2195 2N5416
    Text: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat 11 / Ib td + tr NPN min PNP (V) (A) max m ax (Al (W) (V) (A) (A) tf ty p * max m ax m ax min M> (us) ip *) (M H z) s w itc llin g tran sisto rs


    OCR Scan     		PDF 2N5415 2N5416 tt 2194 LTLS 2n3054 2N2243 aa2n BUX54 2N2192 2N2195

    2N3583

    Abstract: 2N4240 2N36 2N35
    Text: 2N3583 2N3584* 2N3585* 2N4240 *also available as i? t/V E sr JAN, JANTX, JANTXV HIGH-VOLTAGE SILICON N-P-N TRANSISTORS For High-speed Switching and Linear-Amplifier Applications Features • 100-percent tested to assure freedom from second breakdown in both forwardand reverse-bias conditions when operated within specified limits


    OCR Scan     		PDF 2N3583 2N3584* 2N3585* 2N4240 100-percent 2N3583, 2N4240 2N36 2N35

    Motorola transistors MJE3055

    Abstract: Motorola transistors MJE2955 IC TC 3588 MJE2955 power amplifier circuit MJE2955 mje3055 transistor MJE3055 1N5825 MJD2955 30 amp npn transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 2955 Com plem entary Power Transistors PNP M JD 3055 DPAK For Surface Mount Applications ‘ Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • •


    OCR Scan     		PDF MJE2955 MJE3055 1Ol50Â MJD6036 MJD3039 Motorola transistors MJE3055 Motorola transistors MJE2955 IC TC 3588 MJE2955 power amplifier circuit mje3055 transistor MJE3055 1N5825 MJD2955 30 amp npn transistor

    FX1115

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE 86D 0 1 7 7 8 otE » • D 3T T - ? Jl oomoib a 0 "7 BLX68 U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor tor use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. t has a capstan envelope with a moulded cap. All leads are isolated from the stud.


    OCR Scan     		PDF BLX68 OT-48/3. 7Z61766 7Z61769 bb53131 FX1115

    TLP534

    Abstract: TIP540 TIP531 TIP534 BDX32 BUY71 tip 1050 tip632 2N3440 TIP532
    Text: TYPES TIP531 THRU TIP534 N-P-N SILICON POWER TRANSISTORS FOR POWER AMPLIFIER AND HtGH-SPEED-SWITCHING APPLICATIONS • 300 V and 400 V Min V BR CEO • 15-A Rated Continuous Collector Current 150 Watts at 100°C Case Temperature Min fT of 50 MHz at 10 V, 1 A


    OCR Scan     		PDF TIP531 TIP534 TIP531, TIP532 TIPS33, TIP534 TLP534 TIP540 BDX32 BUY71 tip 1050 tip632 2N3440 TIP532

    rca 2N4240

    Abstract: 2n3565 equivalent transistor 2N3585 2N3565 2N4240 2N3583 equivalent RCA-2N3583 2N3584 2n3584 GE 2N3583-2N3585
    Text: DI D E | 3 û ? 5 Qfll 0 0 1 7 1 5 A b 3875081 G E SOLID STATE H ig h -V o ltag e r o w e r transistore 01E 17158 _ D 2N3583-2N3585, 2N4240 T- 3 ? - K. File Number 138 High-Voltage Silicon N-P-N Transistors For H igh-Speed Switching and Linear-Am plifier Applications


    OCR Scan     		PDF 01715A 2N3583-2N3585, 2N4240 RCA-2N3583Â 2N3584Â 2N3585Â 2N4240Â 92CS-IÂ 75ffl 2N3583 rca 2N4240 2n3565 equivalent transistor 2N3585 2N3565 2N4240 2N3583 equivalent RCA-2N3583 2N3584 2n3584 GE 2N3583-2N3585

    BLX68

    Abstract: FX1115 TRANSISTOR D 1785 philips choke ferrite Transistor d12 t transistor rf vhf L7550
    Text: N AMER P H I L I P S / D I S C R E T E 86D _0 b ^ 01778 d • ^53131 001401b ~ r ^ y ^ r ô JL BLX68 U.H.F./V.H.F. POWER TRANSISTOR a suppISy voItage of* 1*3 8 ^ ^ ° la$S B ^ ° operated mobile' industrial and military transmitters with It has a capstan envelope with a moulded cap. All leads are Isolated from the stud.


    OCR Scan     		PDF 001401b BLX68 BLX68 FX1115 TRANSISTOR D 1785 philips choke ferrite Transistor d12 t transistor rf vhf L7550