FDD6672A
Abstract: 6680 MOSFET d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD6680
Text: FDD6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
|
Original
|
PDF
|
FDD6672A
O-252
FDD6672A
6680 MOSFET
d-pak DEVICE MARKING CODE table
CBVK741B019
F63TNR
FDD6680
|
CBVK741B019
Abstract: F63TNR FDD2570 FDD6680
Text: FDD2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.7 A, 150 V. RDS ON = 80 mΩ @ VGS = 10 V
|
Original
|
PDF
|
FDD2570
CBVK741B019
F63TNR
FDD2570
FDD6680
|
CBVK741B019
Abstract: F63TNR FDD6680 FDD6690A
Text: FDD6690A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior
|
Original
|
PDF
|
FDD6690A
O-252
CBVK741B019
F63TNR
FDD6680
FDD6690A
|
CBVK741B019
Abstract: F63TNR FDD5612 FDD6680
Text: FDD5612 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 18 A, 60 V.
|
Original
|
PDF
|
FDD5612
O-252
CBVK741B019
F63TNR
FDD5612
FDD6680
|
Mosfet FDD
Abstract: ON 534 TO252 fdd 690
Text: FDD6644/FDU6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
|
Original
|
PDF
|
FDD6644/FDU6644
O-251AA)
O-252
O-252)
O-252
30TYP
Mosfet FDD
ON 534 TO252
fdd 690
|
Untitled
Abstract: No abstract text available
Text: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
PDF
|
IRFR9024
IRFR9024*
|
6680
Abstract: FZ9935
Text: TO-252 Tape and Reel Data D-PAK TO-252 Packaging Configuration: Figure 1.0 Packaging Description: TO-252 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated
|
Original
|
PDF
|
O-252
O-252)
330cm
164mm
6680
FZ9935
|
Untitled
Abstract: No abstract text available
Text: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
|
Original
|
PDF
|
NDP6060
NDB6060
|
siba
Abstract: 2077132 siba nh gl Part DC92-01021B installation diagram SIBA FUSE FF 500 mA SIBA 50 A Ultra Rapid 50 201 06 Siba 20 209 20
Text: copyright 2014 Maryland Metrics/SIBA Sicherungen-Bau GmbH 201 are available from: MARYLAND METRICS Our protection. Your benefit. SIBA Products are available from: MARYLAND METRICS P.O.Box 261 Owings Mills, MD 21117 USA phones: 410 358-3130 (800) 638-1830 faxes: (410) 358-3142 (800) 872-9329
|
Original
|
PDF
|
R367-â
R367-1100525
R367-'
siba
2077132
siba nh gl
Part DC92-01021B installation diagram
SIBA FUSE FF 500 mA
SIBA 50 A Ultra Rapid 50 201 06
Siba 20 209 20
|
d-pak DEVICE MARKING CODE table
Abstract: CBVK741B019 F63TNR FDD3680 FDD6680 C4692
Text: FDD3680 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 25 A, 100 V.
|
Original
|
PDF
|
FDD3680
d-pak DEVICE MARKING CODE table
CBVK741B019
F63TNR
FDD3680
FDD6680
C4692
|
6-71-M74J0-D03A
Abstract: RTL8111 RTL8111 schematic rsn 3502 a RS780M CLEVO LG-2402P-1 RS780MC 6-71- M74 oz839
Text: Preface Notebook Computer M740J/M740JU/M760J/M760JU Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are
|
Original
|
PDF
|
M740J/M740JU/M760J/M760JU
C276B197D111
C67D67
-533-S-T/R
Z5101
20mil
Z5102
KPC-3216QB
C237B52D52N
6-71-M74J0-D03A
RTL8111
RTL8111 schematic
rsn 3502 a
RS780M
CLEVO
LG-2402P-1
RS780MC
6-71- M74
oz839
|
FDB7045L
Abstract: CBVK741B019 EO70 F63TNR FDP7045L FDP7060 NDP4060L
Text: FDP7045L/FDB7045L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
PDF
|
FDP7045L/FDB7045L
FDB7045L
CBVK741B019
EO70
F63TNR
FDP7045L
FDP7060
NDP4060L
|
EOH-KUMUPB0-GG
Abstract: ta530 HRS CIF
Text: Spec No. Date Page Ver. A-TH-044-00 2008/11/25 1/16 A-00 Super Top LED STL / E5 Series PART NO. : EOH-KUxUPB0-GG Technical Description STL /E5 series is EOI’s newest generation high power LED package. The package is designed to produce high light output with good reliability performance at very high driving current, and allows
|
Original
|
PDF
|
-TH-044-00
EOH-KUMUPB0-GG
ta530
HRS CIF
|
6680 equivalent ic no
Abstract: FDS6680S CBVK741B019 F63TNR FDD6680 FDD6680A FDD6680S FDS6680
Text: FDD6680S 30V N-Channel PowerTrench SyncFET General Description Features The FDD6680S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
|
Original
|
PDF
|
FDD6680S
FDD6680S
FDD6680A
6680 equivalent ic no
FDS6680S
CBVK741B019
F63TNR
FDD6680
FDS6680
|
|
|
EOH-KTHUCB0-EN
Abstract: EOH-KTBUCB0-EN SN60 LED circuit design EOH-KTY
Text: Spec No. Date Page Ver. A-TH-031-00 2008/11/25 1/16 A-00 Super Top LED STL / E5 Series PART NO. : EOH-KTxUCB0-xx Technical Description STL /E5 series is EOI’s newest generation high power LED package. The package is designed to produce high light output with good reliability performance at very high driving current, and allows
|
Original
|
PDF
|
-TH-031-00
EOH-KTHUCB0-EN
EOH-KTBUCB0-EN
SN60
LED circuit design
EOH-KTY
|
6680 MOSFET
Abstract: CBVK741B019 F63TNR FDD6680 40V 14A TO-252 14A, 50V, Logic Level, N-Channel TO-252 Mosfet FDD
Text: FDD6680 N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
PDF
|
FDD6680
6680 MOSFET
CBVK741B019
F63TNR
FDD6680
40V 14A TO-252
14A, 50V, Logic Level, N-Channel TO-252
Mosfet FDD
|
zener diode 3.0 b2
Abstract: m 9835 zener diodes color coded CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7050 NDP4060L
Text: March 1996 NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
|
Original
|
PDF
|
NDP7050
NDB7050
zener diode 3.0 b2
m 9835
zener diodes color coded
CBVK741B019
EO70
F63TNR
FDP7060
L86Z
NDB7050
NDP4060L
|
FDD6680
Abstract: CBVK741B019 F63TNR FDD5670 FDD marking
Text: FDD5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • • Low gate charge.
|
Original
|
PDF
|
FDD5670
FDD6680
CBVK741B019
F63TNR
FDD5670
FDD marking
|
CBVK741B019
Abstract: EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L NDP6060L
Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
|
Original
|
PDF
|
NDP6060L
NDB6060L
CBVK741B019
EO70
F63TNR
FDP7060
L86Z
NDB6060L
NDP4060L
|
Mosfet FDD
Abstract: CBVK741B019 F63TNR FDD6680 MTD3055V
Text: MTD3055V N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
PDF
|
MTD3055V
Mosfet FDD
CBVK741B019
F63TNR
FDD6680
MTD3055V
|
DSAS 13-0
Abstract: d92 02 a9hv
Text: IRFR9024 P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
PDF
|
IRFR9024
DSAS 13-0
d92 02
a9hv
|
170M8554
Abstract: bussmann Fuse 450 amps 250 volts max zs FM09 PS Jet 20A 300v fuse
Text: Circuit Protection Products for the Electrical Industry New Products for All Markets For product data sheets, visit www.cooper.bussmann.com/products/datasheet.asp Circuit Protection Products for the Electrical Industry Table of Contents RED indicates NEW information
|
Original
|
PDF
|
0210-55M
170M8554
bussmann Fuse 450 amps 250 volts max zs
FM09
PS Jet 20A 300v fuse
|
marking 6A STO 23
Abstract: CBVK741B019 F63TNR FDD6630A FDD6680 6680 MOSFET
Text: FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
|
Original
|
PDF
|
FDD6630A
O-252
marking 6A STO 23
CBVK741B019
F63TNR
FDD6630A
FDD6680
6680 MOSFET
|
a9hv
Abstract: No abstract text available
Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
PDF
|
MTD2955V
a9hv
|
