FDP2670
Abstract: D2Pak Package dimensions CBVK741B019 EO70 F63TNR FDB2670 FDP7060 NDP4060L
Text: FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and
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FDP2670/FDB2670
FDP2670
D2Pak Package dimensions
CBVK741B019
EO70
F63TNR
FDB2670
FDP7060
NDP4060L
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CBVK741B019
Abstract: EO70 F63TNR FDB6644 FDP6644 FDP7060 NDP4060L
Text: FDP6644/FDB6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDP6644/FDB6644
CBVK741B019
EO70
F63TNR
FDB6644
FDP6644
FDP7060
NDP4060L
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high voltage mosfet, to-220 case
Abstract: No abstract text available
Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP6644S/FDB6644S
FDP6644S
FDP6644S/FDB6644S
FDP6644/FDB6644
high voltage mosfet, to-220 case
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Untitled
Abstract: No abstract text available
Text: FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP6690S/FDB6690S
FDP6690S
FDP6690S/FDB6690S
FDP6035AL/FDB6035AL
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Untitled
Abstract: No abstract text available
Text: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDP6060
NDB6060
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T0-263
Abstract: CBVK741B019 FDB4020P FDP4020P FDP7060 low threshold mosfet p-channel TO-220
Text: FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage
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FDP4020P/FDB4020P
O-220
O-263
T0-263
CBVK741B019
FDB4020P
FDP4020P
FDP7060
low threshold mosfet p-channel TO-220
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FDB7045L
Abstract: CBVK741B019 EO70 F63TNR FDP7045L FDP7060 NDP4060L
Text: FDP7045L/FDB7045L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDP7045L/FDB7045L
FDB7045L
CBVK741B019
EO70
F63TNR
FDP7045L
FDP7060
NDP4060L
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TO220 Semiconductor Packaging
Abstract: CBVK741B019 EO70 F63TNR FDB6676 FDP6676 FDP7060 NDP4060L marking code ng Fairchild
Text: FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDP6676/FDB6676
TO220 Semiconductor Packaging
CBVK741B019
EO70
F63TNR
FDB6676
FDP6676
FDP7060
NDP4060L
marking code ng Fairchild
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zener diode 3.0 b2
Abstract: m 9835 zener diodes color coded CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7050 NDP4060L
Text: March 1996 NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDP7050
NDB7050
zener diode 3.0 b2
m 9835
zener diodes color coded
CBVK741B019
EO70
F63TNR
FDP7060
L86Z
NDB7050
NDP4060L
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CBVK741B019
Abstract: EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L NDP6060L
Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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NDP6060L
NDB6060L
CBVK741B019
EO70
F63TNR
FDP7060
L86Z
NDB6060L
NDP4060L
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Untitled
Abstract: No abstract text available
Text: FDP5645/FDB5645 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 83 A, 60 V.
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FDP5645/FDB5645
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FDP5680
Abstract: No abstract text available
Text: FDP5680/FDB5680 60V N-Channel PowerTrenchTM MOSFET General Description Features 40 A, 60 V. RDS ON = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters
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FDP5680/FDB5680
FDP5680
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Untitled
Abstract: No abstract text available
Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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NDP6060L
NDB6060L
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MOSFET and parallel Schottky diode
Abstract: CBVK741B019 EO70 FDB6644S FDP6644 FDP6644S FDP7060
Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP6644S/FDB6644S
FDP6644S
FDP6644S/FDB6644S
FDP6644/FDB6644
MOSFET and parallel Schottky diode
CBVK741B019
EO70
FDB6644S
FDP6644
FDP7060
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zener diode 3.0 b2
Abstract: m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L NDP7061L
Text: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDP7061L
NDB7061L
zener diode 3.0 b2
m 9835
CBVK741B019
EO70
F63TNR
FDP7060
L86Z
NDB7061L
NDP4060L
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m 9835
Abstract: CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7060 NDP4060L NDP7060
Text: May 1996 NDP7060 / NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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NDP7060
NDB7060
m 9835
CBVK741B019
EO70
F63TNR
FDP7060
L86Z
NDB7060
NDP4060L
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CBVK741B019
Abstract: EO70 F63TNR FDP7060 L86Z NDB7051 NDP4060L NDP7051 Polycarbonate
Text: August 1996 NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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NDP7051
NDB7051
CBVK741B019
EO70
F63TNR
FDP7060
L86Z
NDB7051
NDP4060L
Polycarbonate
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CBVK741B019
Abstract: EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L NDP7061L
Text: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDP7061L
NDB7061L
CBVK741B019
EO70
F63TNR
FDP7060
L86Z
NDB7061L
NDP4060L
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50s MARKING CODE
Abstract: FDP7030BL FDP7030BLS MOSFET and parallel Schottky diode CBVK741B019 EO70 FDB7030BLS FDP7060 NDP4060L
Text: FDP7030BLS / FDB7030BLS 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP7030BLS
FDB7030BLS
FDP7030BLS
FDP7030BL
50s MARKING CODE
MOSFET and parallel Schottky diode
CBVK741B019
EO70
FDB7030BLS
FDP7060
NDP4060L
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FDP6030BL
Abstract: m 9835 ZENER SINGLE COLOR CODE CBVK741B019 EO70 F63TNR FDB6030BL FDP7060 NDP4060L
Text: FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDP6030BL/FDB6030BL
FDP6030BL
m 9835
ZENER SINGLE COLOR CODE
CBVK741B019
EO70
F63TNR
FDB6030BL
FDP7060
NDP4060L
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CBVK741B019
Abstract: EO70 F63TNR FDB2570 FDP2570 FDP7060 NDP4060L D2Pak Package dimensions
Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and
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FDP2570/FDB2570
CBVK741B019
EO70
F63TNR
FDB2570
FDP2570
FDP7060
NDP4060L
D2Pak Package dimensions
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corrugated box spec
Abstract: TO220 Semiconductor Packaging FDP7060 NDP4060L CBVK741B019 EO70 corrugated packaging F9852
Text: TO-220 Tube Packing Data TO-220 Tube Packing Configuration: Figure 1.0 Packaging Description: TO-220 parts are shipped normally in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in standard option are placed inside a dissipative
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O-220
530mm
130mm
114mm
102mm
F9852
NDP4060L
corrugated box spec
TO220 Semiconductor Packaging
FDP7060
NDP4060L
CBVK741B019
EO70
corrugated packaging
F9852
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CBVK741B019
Abstract: EO70 F63TNR FDB6030BL FDP6030BL FDP7060 NDP4060L
Text: FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDP6030BL/FDB6030BL
CBVK741B019
EO70
F63TNR
FDB6030BL
FDP6030BL
FDP7060
NDP4060L
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2539a
Abstract: No abstract text available
Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and
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FDP2570/FDB2570
2539a
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