NDP7051 Search Results

NDP7051 Datasheets (9)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NDP7051		Fairchild Semiconductor	N-Channel Enhancement Mode Field Effect Transistor		Original	PDF
NDP7051		National Semiconductor	N-Channel Enhancement Mode Field Effect Transistor		Original	PDF
NDP7051		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
NDP7051		National Semiconductor	N-Channel Enhancement Mode Field Effect Transistor		Scan	PDF
NDP7051L		Fairchild Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor		Original	PDF
NDP7051L		National Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor		Original	PDF
NDP7051L		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
NDP7051L		National Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor		Scan	PDF
NDP7051L		National Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor		Scan	PDF

NDP7051 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CBVK741B019 Abstract: EO70 F63TNR FDP7060 L86Z NDB7051 NDP4060L NDP7051 Polycarbonate Text: August 1996 NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	Original	NDP7051 NDB7051 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7051 NDP4060L Polycarbonate	PDF
CBVK741B019 Abstract: EO70 F63TNR FDP7060 NDB7051L NDP4060L NDP7051L DS1015 Text: September 1996 NDP7051L / NDB7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 67 A, 50 V. RDS ON = 0.0145 Ω @ VGS= 5 V RDS(ON) = 0.0115 Ω @ VGS= 10 V. These logic level N-Channel enhancement mode power field	Original	NDP7051L NDB7051L CBVK741B019 EO70 F63TNR FDP7060 NDB7051L NDP4060L DS1015	PDF
NDB7051 Abstract: NDP7051 Text: N August 1996 NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored	Original	NDP7051 NDB7051 NDB7051	PDF
NDB7051L Abstract: NDP7051L Text: N September 1996 NDP7051L / NDB7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS	Original	NDP7051L NDB7051L transients00 D/NDB7051L NDB7051L	PDF
mosfet cross reference Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P	Original	2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
ss8050 d 331 Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34 Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2	Original	F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34	PDF
NDB7051 Abstract: No abstract text available Text: S e p te m b e r 1 9 9 6 N NDP7051 L / NDB7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese lo g ic level N -C hannel e n h a n c e m e n t m o d e p o w e r fie ld effect tra n s is to rs are p ro d u c e d using	OCR Scan	NDP7051 NDB7051L NDP7051L D/NDB7051 NDB7051	PDF
NDB-Series Abstract: NDB7051L NDP7051L Text: N a ti on a l Semiconductor May 1996 " ADVANCE INFORMATION NDP7051L / NDB7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode pow er fie ld effect tran sisto rs are produced using	OCR Scan	NDP7051L NDB7051L b-501130 NDB-Series NDB7051L	PDF
Untitled Abstract: No abstract text available Text: Septem ber 1996 N NDP7051 L / NDB7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode pow er field effect transistors are produced using National's proprietary, high cell density, DMOS	OCR Scan	NDP7051 NDB7051L	PDF
NDB7051 Abstract: NDB7051L NDP7051 NDP7051L Text: Septem ber 1996 N NDP7051 L / N D B 7051L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features T hese logic level N -C hannel e n h a n c e m e n t m o d e po w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS	OCR Scan	NDP7051 NDB7051L 051LRev NDB7051 NDB7051L NDP7051L	PDF
Untitled Abstract: No abstract text available Text: August 1 99 6 N NDP7051 / NDB7051 N-Channel Enhancement M ode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	NDP7051 NDB7051	PDF
NDB7051 Abstract: NDP7051 Text: M ay 1996 National Semiconductor " NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	NDP7051 NDB7051 bSQ113Ã NDB7051	PDF

Untitled Abstract: No abstract text available Text: August 1996 N NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	NDP7051 NDB7051	PDF