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    35N15E Datasheets Context Search

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    35N15E

    Contextual Info: MOTOROLA Order this document by 35N15E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole M TW 35N15E Motorola Preferred Device TMOS POWER FET 35 AMPERES 150 VOLTS


    OCR Scan     		MTW35N15E/D 35N15E 340K-01 35N15E PDF

    6N60E

    Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E
    Contextual Info: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218


    OCR Scan     		O-247 O-218 340F-03 340B-03 O-247 6N100E 10N100E 6N60E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 16N40E PDF