BBC OS 0,9 4A
Abstract: 07380 bbc os 0.9 4A
Text: lb T O S H I B A -CDISC R E T E / O P T O } 909725 0 TO SHI BA T D i 7E S O Q Ü Q 1371 fc, | bbC <DISCRETE/OPTO 0 7 379 2SB993 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
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2SB993
2SD1363
200X200X2mmA£
150Xl50X2mm
100X100X2mm
70x70x2mma£
35X35XlmmA^
25X25XlmmA^
BBC OS 0,9 4A
07380
bbc os 0.9 4A
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2SD234
Abstract: 2SD235 2SD235 Toshiba 2so234 SD235 2SD2354 2SB434 2SB435 transistor 2sd234 8bb4
Text: r SILICON NPN DIFFUSED JUNCTION TRANSISTOR o • • 2 s d 234 À 2 s d 235 U n it in mm Audio Power A m p l if i e r A p p l i c a t i o n s ; V CE sat = Q 8 V 1 0 .3 M A X . # 3 ,6 ± a 3 ( T yp .) d c = l A ) 2SD235 ^ : P c = 3 5 w (To = 3 5 ^ ) 3^9 2 S B 4 34 , Z S B i 35 t ^ 7') t
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2so234
2sd235
2SB434,
ZSB434
2SB435.
2SD234
220AB
2SD235
2SD235 Toshiba
SD235
2SD2354
2SB434
2SB435
transistor 2sd234
8bb4
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2SD553
Abstract: Toshiba 2sd553
Text: TOSHIBA 2SD553 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 HIGH CURRENT SWITCHING APPLICATIONS PO W ER A M PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX Low Saturation Voltage : V q ^ sat “ 0.4V (Max.) (at Complementary to 2SB553.
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2SD553
2SB553.
2-10A1A
O-220AB
2SD553
Toshiba 2sd553
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D 871 Toshiba
Abstract: 2SB993 2SD1363
Text: TOSHIBA -CDISCRETE/0PT03- 9097250 T O S H IB A 5h DE~|TCn7250 □□□7cì3h 1 <D I S C R E T E / O P T O > SILICON NPN TRIPLE DIFFUSED TYPE. INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. _ POWER AMPLIFIER APPLICATIONS. 1 Û 3 M A X .
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-CDISCRETE/0PT03-
2SB993
300X300X3mmAÂ
200X200X2rmn
150XI50Xi3ramAÂ
50X50X2ramA^
35X35XlmmkÂ
85xa5XlmmA^
IIIIlll111llltlltl
lttlltiltlllllllll111llllltllia11ltiltlll
D 871 Toshiba
2SD1363
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2SB553
Abstract: 20AS 2SD553 AC75
Text: TOSHIBA 2SD553 2SD553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS PO W ER AM PLIFIER APPLICATIONS 10 .3 M A X . • • Low Saturation Voltage : Complementary to 2SB553. sat = 0.4V (Max.) (at Iq = 4A)
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2SD553
2SB553.
150Xl50X2mm
100Xl00X2mm
35X35Xlmm
25X25Xlmm
2SB553
20AS
2SD553
AC75
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD553 2 SD553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS PO W ER AM PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm i0.3MAX. 3.6 ±0.2 Low Saturation Voltage : V q e sat = 0-4V (Max.) (at Iç = 4A)
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2SD553
SD553
2SB553.
150x150x2mm
100xl00x2m
50x50x2m
35x35xlm
25X25
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