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    366M Search Results

    366M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LTC4366MPTS8-1#TRMPBF Analog Devices Hi V Surge Stopper Visit Analog Devices Buy
    LTC4366MPTS8-1#TRPBF Analog Devices Hi V Surge Stopper Visit Analog Devices Buy
    LTC4366MPDDB-2#TRPBF Analog Devices Hi V Surge Stopper Visit Analog Devices Buy
    LTC4366MPDDB-2#TRMPBF Analog Devices Hi V Surge Stopper Visit Analog Devices Buy
    LTC4366MPDDB-1#TRPBF Analog Devices Hi V Surge Stopper Visit Analog Devices Buy
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    366M Price and Stock

    Rochester Electronics LLC CD74HC366M96

    CD74HC366 HIGH SPEED CMOS LOGIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CD74HC366M96 Bulk 5,000 1,791
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    • 10000 $0.17
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    Texas Instruments DS90CF366MTDX/NOPB

    IC INTERFACE SPECIALIZED 48TSSOP
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    DigiKey DS90CF366MTDX/NOPB Cut Tape 1,188 1
    • 1 $4.38
    • 10 $3.2
    • 100 $2.582
    • 1000 $2.33436
    • 10000 $2.33436
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    DS90CF366MTDX/NOPB Reel 1,000 1,000
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    • 1000 $2.25767
    • 10000 $2.16292
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    Mouser Electronics DS90CF366MTDX/NOPB 5,195
    • 1 $4.16
    • 10 $3.54
    • 100 $3.06
    • 1000 $2.2
    • 10000 $2.09
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    JRH Electronics 557B366M524T7

    CONNECTOR BACKSHELL
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    DigiKey 557B366M524T7 Bulk 660 1
    • 1 $2897.8
    • 10 $1662.077
    • 100 $1662.077
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    Analog Devices Inc LTC4366MPDDB-2#TRMPBF

    IC SURGE STOPPER HV 8-DFN
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    DigiKey LTC4366MPDDB-2#TRMPBF Cut Tape 535 1
    • 1 $21.96
    • 10 $16.059
    • 100 $12.8559
    • 1000 $12.03876
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    LTC4366MPDDB-2#TRMPBF Reel 500 500
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    Mouser Electronics LTC4366MPDDB-2#TRMPBF 541
    • 1 $21.35
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    • 100 $12.86
    • 1000 $11.77
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    Newark LTC4366MPDDB-2#TRMPBF Cut Tape 1
    • 1 $19.98
    • 10 $18.36
    • 100 $15.51
    • 1000 $14.75
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    Analog Devices Inc LTC4366MPDDB-2#TRMPBF 10,207
    • 1 $21.96
    • 10 $16.059
    • 100 $12.8559
    • 1000 $9.42
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    Richardson RFPD LTC4366MPDDB-2#TRMPBF 500
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    Analog Devices Inc LTC4366MPTS8-1#TRMPBF

    IC SURGE STOPPER HV TSOT-23-8
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    DigiKey LTC4366MPTS8-1#TRMPBF Cut Tape 495 1
    • 1 $21.96
    • 10 $16.059
    • 100 $12.8559
    • 1000 $12.03876
    • 10000 $12.03876
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    Mouser Electronics LTC4366MPTS8-1#TRMPBF 539
    • 1 $22.4
    • 10 $18.73
    • 100 $15.43
    • 1000 $14.08
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    Analog Devices Inc LTC4366MPTS8-1#TRMPBF 3,599
    • 1 $21.96
    • 10 $16.059
    • 100 $12.8559
    • 1000 $9.42
    • 10000 $9.42
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    Richardson RFPD LTC4366MPTS8-1#TRMPBF 500
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    • 1000 $12.64
    • 10000 $12.16
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    Find more 366M price and stock on Findchips.com

    366M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDMC2674

    Abstract: No abstract text available
    Text: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ Features tm General Description „ Max rDS on = 366mΩ at VGS = 10V, ID = 1.0A UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge,


    Original     		PDF FDMC2674 FDMC2674

    Untitled

    Abstract: No abstract text available
    Text: W986416DH 1M x 4 BANKS × 16 BITS SDRAM GENERAL DESCRIPTION W986416DH is a high-speed synchronous dynamic random access memory SDRAM , organized as 1M words × 4 banks × 16 bits. Using pipelined architecture and 0.175 µm process technology, W986416DH delivers a data bandwidth of up to 366M bytes per second (-55). For different


    Original     		PDF W986416DH W986416DH 183Mhz/CL3. 166Mhz/CL3. 143Mhz/CL3. 400uA.

    Untitled

    Abstract: No abstract text available
    Text: 366M Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)145# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)5.0 @Temp. (øC) (Test Condition)25#


    Original     		PDF Voltage600 Current10m StyleDO-203AA

    21071AA

    Abstract: 21A04-B0 21a04 Alpha 21064-BB 21164-P6
    Text: Alpha 64-bit Microprocessor Fact Sheet: Alpha 21164 Microprocessor NEW NEW 300MHz 8.7 8.7 20-100MHz 366MHz 11.3 14.5 25-122MHz 433MHz 13.3 18.3 29-144MHz 500MHz 15.4 21.1 33166MHz Off Chip Cache Manuf. Process 8KB 8KB 96K 1 MB 0.35 micron 8KB 8KB 96K 1 MB


    Original     		PDF 64-bit 300MHz 20-100MHz 366MHz 25-122MHz 433MHz 29-144MHz 500MHz 33166MHz 208mm2 21071AA 21A04-B0 21a04 Alpha 21064-BB 21164-P6

    2N3501 JANTX

    Abstract: JANKCB2N3501 2N3501 diagram 2n3501ub 366n JANKCC2N3501 2N3498 2N3501 2N3499 2N3499L
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 5 November 2010. MIL-PRF-19500/366N 5 August 2010 SUPERSEDING MIL-PRF-19500/366M 22 October 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLIFIER,


    Original     		PDF MIL-PRF-19500/366N MIL-PRF-19500/366M 2N3498, 2N3498L, 2N3498U4, 2N3499, 2N3499L, 2N3499U4, 2N3500, 2N3500L, 2N3501 JANTX JANKCB2N3501 2N3501 diagram 2n3501ub 366n JANKCC2N3501 2N3498 2N3501 2N3499 2N3499L

    Untitled

    Abstract: No abstract text available
    Text: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 1A, 366mΩ Features tm General Description UltraFET® device combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS on , low ESR, low total and Miller gate


    Original     		PDF FDMC2674

    Untitled

    Abstract: No abstract text available
    Text: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 1A, 366m: Features tm General Description UltraFET® device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS on , low ESR, low total and Miller gate


    Original     		PDF FDMC2674

    Untitled

    Abstract: No abstract text available
    Text: LTC2232/LTC2233 10-Bit,105Msps/ 80Msps ADCs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Sample Rate: 105Msps/80Msps 61dB SNR up to 140MHz Input 75dB SFDR up to 200MHz Input 775MHz Full Power Bandwidth S/H Single 3.3V Supply Low Power Dissipation: 475mW/366mW


    Original     		PDF LTC2232/LTC2233 10-Bit 105Msps/ 80Msps 105Msps/80Msps 140MHz 200MHz 775MHz 475mW/366mW 135Msps:

    Untitled

    Abstract: No abstract text available
    Text: LTC2222/LTC2223 12-Bit,105Msps/ 80Msps ADCs FEATURES n n n n n n n n n n n n n DESCRIPTION Sample Rate: 105Msps/80Msps 68dB SNR up to 140MHz Input 80dB SFDR up to 170MHz Input 775MHz Full Power Bandwidth S/H Single 3.3V Supply Low Power Dissipation: 475mW/366mW


    Original     		PDF LTC2222/LTC2223 12-Bit 105Msps/ 80Msps 105Msps/80Msps 140MHz 170MHz 775MHz 475mW/366mW 135Msps:

    FDMC2674

    Abstract: No abstract text available
    Text: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 1A, 366mΩ Features tm General Description UltraFET® device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS on , low ESR, low total and Miller gate


    Original     		PDF FDMC2674 FDMC2674

    Untitled

    Abstract: No abstract text available
    Text: MOULDED HELICAL ANTENNA 132-366MHZ TECHNICAL SPECIFICATIONS PART NO. MFX-BNC-JRC MFX-BNC-H3 MFX-BNC-H4 MFX-BNC-H5 MFX-BNC-H6 MFX-BNC-H7 MFX-BNC-K5 MFX-BNC-K6 MFX-BNC-K7 MFX-BNC-L MFX-BNC-M MFX-BNC-N MFX-BNC-P MFX-BNC-R Frequency in MHz 139-157 132-143 141-151


    Original     		PDF 132-366MHZ M/9/02

    TL 2223 pc

    Abstract: DAC IC 0804 ac voltage stablizer LTC6600-20 ETC1-1-13 V4 center tapped transformer 1K215
    Text: LTC2222/LTC2223 12-Bit,105Msps/ 80Msps ADCs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Sample Rate: 105Msps/80Msps 68dB SNR up to 140MHz Input 80dB SFDR up to 170MHz Input 775MHz Full Power Bandwidth S/H Single 3.3V Supply Low Power Dissipation: 475mW/366mW


    Original     		PDF LTC2222/LTC2223 12-Bit 105Msps/ 80Msps 105Msps/80Msps 140MHz 170MHz 775MHz 475mW/366mW 135Msps: TL 2223 pc DAC IC 0804 ac voltage stablizer LTC6600-20 ETC1-1-13 V4 center tapped transformer 1K215

    Untitled

    Abstract: No abstract text available
    Text: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ Features tm General Description „ Max rDS on = 366mΩ at VGS = 10V, ID = 1.0A UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge,


    Original     		PDF FDMC2674

    lucent 1646t00

    Abstract: CPU 414-2 Processor Module 1646T00 BIOS 29EE020 39 PIN TFT MOBILE DISPLAY S8501 8254 TIMER PCI1251B ES1978s 37 PIN TFT MOBILE DISPLAY
    Text: 1 Specifications 1-2 System Specifications FEATURE SPECIFICATION REMARKS PROCESSOR INTEL MOBILE PENTIUM-II DIXON, CELERON CLOCK FREQ.: 266/300/333/366MHz PACKAGE TYPE: MMC-2 TYPE L2 CACHE IN DIXON PROCESSOR INTEL i82443BX+i82371EB i82443BX in MMC-2 Module


    Original     		PDF 266/300/333/366MHz i82443BX i82371EB 16/32/64/128MB 720KB/1 DMA33 680MB S820/S850 lucent 1646t00 CPU 414-2 Processor Module 1646T00 BIOS 29EE020 39 PIN TFT MOBILE DISPLAY S8501 8254 TIMER PCI1251B ES1978s 37 PIN TFT MOBILE DISPLAY

    w986416dh-6

    Abstract: 366M W986416DH W986416DH-55 W986416DH-7 W986416DH-7L
    Text: W986416DH 1M x 4 BANKS × 16 BITS SDRAM GENERAL DESCRIPTION W986416DH is a high-speed synchronous dynamic random access memory SDRAM , organized as 1M words × 4 banks × 16 bits. Using pipelined architecture and 0.175 µm process technology, W986416DH delivers a data bandwidth of up to 366M bytes per second (-55). For different application,


    Original     		PDF W986416DH W986416DH w986416dh-6 366M W986416DH-55 W986416DH-7 W986416DH-7L

    22323

    Abstract: 201d6 LTC2222 LTC2223 LTC2224 LTC2232 LTC2233 LTC2234 DC751
    Text: LTC2232/LTC2233 10-Bit,105Msps/ 80Msps ADCs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Sample Rate: 105Msps/80Msps 61dB SNR up to 140MHz Input 75dB SFDR up to 200MHz Input 775MHz Full Power Bandwidth S/H Single 3.3V Supply Low Power Dissipation: 475mW/366mW


    Original     		PDF LTC2232/LTC2233 10-Bit 105Msps/ 80Msps 105Msps/80Msps 140MHz 200MHz 775MHz 475mW/366mW 135Msps: 22323 201d6 LTC2222 LTC2223 LTC2224 LTC2232 LTC2233 LTC2234 DC751

    Untitled

    Abstract: No abstract text available
    Text: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ Features tm General Description ̈ Max rDS on = 366mΩ at VGS = 10V, ID = 1.0A UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge,


    Original     		PDF FDMC2674 FDMC2674

    LTC2233

    Abstract: LTC2234 LTC2222 LTC2223 LTC2224 LTC2232 TL 2223 pc
    Text: LTC2222/LTC2223 12-Bit,105Msps/ 80Msps ADCs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Sample Rate: 105Msps/80Msps 68dB SNR up to 140MHz Input 80dB SFDR up to 170MHz Input 775MHz Full Power Bandwidth S/H Single 3.3V Supply Low Power Dissipation: 475mW/366mW


    Original     		PDF LTC2222/LTC2223 12-Bit 105Msps/ 80Msps 105Msps/80Msps 140MHz 170MHz 775MHz 475mW/366mW 135Msps: LTC2233 LTC2234 LTC2222 LTC2223 LTC2224 LTC2232 TL 2223 pc

    ADS5237

    Abstract: ADS5237IPAG ADS5237IPAGT TQFP-64
    Text: BurrĆBrown Products from Texas Instruments ADS5237 SBAS420A – AUGUST 2007 – REVISED OCTOBER 2007 Dual, 10-Bit, 65MSPS, +3.3V Analog-to-Digital Converter FEATURES 1 DESCRIPTION • Single +3.3V Supply • High SNR: 61.7dBFS at fIN = 5MHz • Total Power Dissipation:


    Original     		PDF ADS5237 SBAS420A 10-Bit, 65MSPS, 366mW 330mW TQFP-64 ADS5237 ADS5237IPAG ADS5237IPAGT

    250 mhz IBM PowerPC Processor

    Abstract: EMPPC740 interface 740 IBM PowerPC 740 reference manual emppc750 IBM PowerPC 250 EMPPC750L
    Text: PowerPC 740TM and PowerPC 750TM Embedded Microprocessor Datasheet IBM CMOS 0.20 µm Copper Technology EMPPC740L and EMPPC750L Version 1.51 7/15/99 IBM Microelectronics Division Notices Before using this information and the product it supports, be sure to read the general information on the


    Original     		PDF 740TM 750TM EMPPC740L EMPPC750L 250 mhz IBM PowerPC Processor EMPPC740 interface 740 IBM PowerPC 740 reference manual emppc750 IBM PowerPC 250 EMPPC750L

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    LTC3417A

    Abstract: LTC3417AEDHC LTC3417AEFE LTC3417AIFE
    Text: LTC3417A Dual Synchronous 1.5A/1A 4MHz Step-Down DC/DC Regulator Description Features High Efficiency: Up to 95% 1.5A/1A Guaranteed Minimum Output Current Synchronizable to External Clock No Schottky Diodes Required Programmable Frequency Operation: 1.5MHz or


    Original     		PDF LTC3417A 600kHz, LTC3448 25MHz, 600mA LTC3548 800mA 400mA 3417afc LTC3417A LTC3417AEDHC LTC3417AEFE LTC3417AIFE

    Untitled

    Abstract: No abstract text available
    Text: PowerPC 750 SCM RISC Microprocessor PID8p-750 Preface The Pow erPC PID 8p-750 m icroprocessor is an im plem entation of the P o w erP C fam ily of reduced instruc­ tion set com puter RISC m icroprocessors. In this docum ent, the term “ P ID 8p-750” is used as an abbreviation


    OCR Scan     		PDF PID8p-750 8p-750 8p-750â

    Untitled

    Abstract: No abstract text available
    Text: IBM PowerPC 750 SCM RISC Microprocessor PID8P-750 Preface The PowerPC PID8p-750 microprocessor is an implementation of the PowerPC family of reduced instruc­ tion set computer RISC microprocessors. In this document, the term “PID8p-750” is used as an abbreviation


    OCR Scan     		PDF PID8P-750 PID8p-750 PID8p-750â