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    L52C

    Abstract: No abstract text available
    Text: RFL1N12 RFL1N15 2 H a rris N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Features Package T O -2 0 5 A F • 1A, 120V and 150V • ros on) = 1.9fi GATE SOURCE • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		PDF RFL1N12 RFL1N15 RFL1N15 T1N12 92CS-34 36I3B 92CS-3 L52C