M57716L
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57716L 360-380MHz, 12.5V, 13W, DIGITAL MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 3±0.3 2 60±0.5 7.25±0.8 3 4 51.5±0.5 1 5 2-R2±0.5 1 2 3 4 5 6 6 φ 0.45±0.15 PIN: 1 Pin : RF INPUT 2 VBB : BASE BIAS SUPPLY
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M57716L
360-380MHz,
VCC12nditions
10pcs/Lot)
360MHz
380MHz
M57716L
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digital mobile radio
Abstract: M68749 5040T 380-400MHz
Text: MITSUBISHI RF POWER MODULE M68749 380-400MHz, 12.5V, 5W, DIGITAL MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 3±0.3 60±0.5 7.25±0.8 51.5±0.5 2 3 4 1 5 2-R2±0.5 1 2 3 4 5 6 6 φ 0.45±0.15 12±1 PIN: 1 Pin : RF INPUT 2 VBB : BASE BIAS SUPPLY
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M68749
380-400MHz,
10pcs/Lot)
380MHz
400MHz
digital mobile radio
M68749
5040T
380-400MHz
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MAX4818
Abstract: MAX4818ETE MAX4819 MAX4819ETE
Text: 19-3915; Rev 1; 1/07 High-Bandwidth T1/E1 Dual-SPDT Switches/ 4:1 Muxes The MAX4818/MAX4819 high-bandwidth, low-on-resistance analog dual SPDT switches/4:1 multiplexers are designed to serve as integrated T1/E1 protection switches for 1+1 and N+1 line-card redundancy applications. Each MAX4818/MAX4819 replaces four
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MAX4818/MAX4819
MAX4818/MAX4819
MAX4818
MAX4818ETE
MAX4819
MAX4819ETE
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Switch Normally close
Abstract: MAX4818 MAX4818ETE MAX4819 MAX4819ETE
Text: 19-3915; Rev 0; 1/06 High-Bandwidth T1/E1 Dual-SPDT Switches/ 4:1 Muxes The MAX4818/MAX4819 high-bandwidth, low-on-resistance analog dual SPDT switches/4:1 multiplexers are designed to serve as integrated T1/E1 protection switches for 1+1 and N+1 line-card redundancy applications. Each MAX4818/MAX4819 replaces four
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MAX4818/MAX4819
MAX4818/MAX4819
Switch Normally close
MAX4818
MAX4818ETE
MAX4819
MAX4819ETE
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RA55H3847M
Abstract: No abstract text available
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3847M RoHS COMPLIANCE , 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3847M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 380- to
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RA55H3847M
380-470MHz
RA55H3847M
55-watt
470-MHz
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LC2 contactor
Abstract: LC2-D12 LC2-D09 contactor d09 pp d115 D09P7V D115 D150 LC2-D40 LC2-D150
Text: References TeSys contactors 5 5 Reversing contactors for motor control up to 75 kW at 400 V, in category AC-3 Horizontally mounted, pre-assembled Control circuit: a.c., d.c. or low consumption 810369 3-pole reversing contactors for connection by screw clamp terminals or connectors
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24503-EN
LC2 contactor
LC2-D12
LC2-D09
contactor d09
pp d115
D09P7V
D115
D150
LC2-D40
LC2-D150
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RA60H3847M1
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to
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RA60H3847M1
378-470MHz
RA60H3847M1
60-watt
470-MHz
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Igg22
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA60H3847M1A RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For Digital Mobile Radio DESCRIPTION The RA60H3847M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt digital mobile radios of DMR that operate in the 378- to 470-MHz range.
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RA60H3847M1A
378-470MHz
RA60H3847M1A
60-watt
470-MHz
Igg22
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DIN 6784 c1
Abstract: BCR108T BFR380T E6327 SC75
Text: BFR380T NPN Silicon RF Transistor 3 Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation 2 Ideal for low phase noise oscillators up to 3.5 GHz 1 Low noise figure: 1.1 dB at 1.8 GHz VPS05996
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BFR380T
VPS05996
DIN 6784 c1
BCR108T
BFR380T
E6327
SC75
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BGD812
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 Philips Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier
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M3D252
BGD812
OT115J
SCA73
613518/04/pp12
BGD812
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RA55H3847M
Abstract: 310A tube RF MOSFET MODULE
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3847M RoHS COMPLIANCE , 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3847M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 380- to
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RA55H3847M
380-470MHz
RA55H3847M
55-watt
470-MHz
310A tube
RF MOSFET MODULE
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RA13H3340M
Abstract: RA13H3340M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to
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RA13H3340M
330-400MHz
RA13H3340M
13-watt
400-MHz
RA13H3340M-01
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Untitled
Abstract: No abstract text available
Text: ZL MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS ZL SERIES 105oC High ripple current, Low impedance. FEATURES • Enabled high ripple current by a reduction of impedance at high frequency range. • Load Life : 105°C 1000~5000hours. • RoHS compliance. SPECIFICATIONS
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105oC
10005000hours.
120Hz)
rat82
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RA55H3847M
Abstract: Pout-120
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3847M RoHS COMPLIANCE , 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3847M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 380- to
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RA55H3847M
380-470MHz
RA55H3847M
55-watt
470-MHz
Pout-120
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RA07N3340M
Abstract: RA07N3340M-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N3340M RoHS Compliance , 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to
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RA07N3340M
330-400MHz
RA07N3340M
400-MHz
RA07N3340M-101
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RA13H3340M
Abstract: RA13H3340M-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M RoHS Compliance , 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to
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RA13H3340M
330-400MHz
RA13H3340M
13-watt
400-MHz
RA13H3340M-101
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50WV
Abstract: YXA Series
Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS ZL ZL SERIES 105˚C High ripple current, Low impedance. ♦FEATURES • Enabled high ripple current by a reduction of impedance at high frequency range. • Load Life : 105˚C 1000~5000hours. ♦SPECIFICATIONS Items
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5000hours.
120Hz)
5x20L
10x12
50WV
YXA Series
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RA07H3340M-101
Abstract: RA07H3340M
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 330- to 400-MHz
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RA07H3340M
330-400MHz
RA07H3340M
400-MHz
RA07H3340M-101
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RF NPN POWER TRANSISTOR 3 GHZ
Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ RF TRANSISTOR 2.5 GHZ s parameter Germanium Power Diodes GERMANIUM TRANSISTOR RF NPN POWER TRANSISTOR 2.5 GHZ germanium transistors NPN BFP740 BGA420 E6327
Text: BFP740 3 NPN Silicon Germanium RF Transistor 4 • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 up to 10 GHz and more 1 • Ideal for CDMA and WLAN applications VPS05605 • Outstanding noise figure F = 0.5 dB at 1.8 GHz
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BFP740
VPS05605
OT343
RF NPN POWER TRANSISTOR 3 GHZ
RF NPN POWER TRANSISTOR C 10-12 GHZ
RF TRANSISTOR 2.5 GHZ s parameter
Germanium Power Diodes
GERMANIUM TRANSISTOR
RF NPN POWER TRANSISTOR 2.5 GHZ
germanium transistors NPN
BFP740
BGA420
E6327
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RA07N3340M
Abstract: RA07N3340M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N3340M 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to
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RA07N3340M
330-400MHz
RA07N3340M
400-MHz
RA07N3340M-01
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Untitled
Abstract: No abstract text available
Text: C YM 1831V33 1YPRESS 64K x 32 3.3V Static RAM Module ule is constructed from two 64K x 16 SRAMs in SOJ packages mounted on an epoxy laminate substrate. Four chip selects are used to independently enable the four bytes. Reading or writing can be executed on individual bytes or any combination
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1831V33
CYM1831V33
64-pin
CYM1821,
CYM1831,
CYM1836,
CYM1841)
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LRD 03
Abstract: MO350 25X1 M57704SL mo 350
Text: M ITSU B ISH I HF PO W ER M ODULE M57704SL 360-380MHZ, 12.5V, 13W, FM MOBILE RADIO BLOCK DIAGRAM Il— —Il— —il— PIN : © P in : RF IN PU T DVCCl : 1st. DC SUPPLY ® V C C 2 : 2nd. DC SUPPLY @ V C C 3 : 3rd. DC SUPPLY ®P0 : RF O U TPU T ® G N D : FIN
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M57704SL
360-380MHZ,
380MHz
LRD 03
MO350
25X1
M57704SL
mo 350
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification CATV am plifier module BGD814 FEATURES PINNING -SOT115J • Excellent linearity PIN • Extremely low noise DESCRIPTION 1 • Excellent return loss properties input 2 and 3 • Silicon nitride passivation common
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BGD814
-SOT115J
OT115J
MSA319
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8X16
Abstract: DS12 ZL1000
Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS ZL ZL SERIES 1 0 5 t High ripple current, Low impedance. ♦FEA TU R ES • Enabled high ripple current by a reduction of Impedance at high frequency range. •Load Life :1 0 5 t; 1000~5000hours. ♦ s p e c if ic a t io n s
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5000hours.
120Hz)
ZL150M
ZL1000M
8X16
DS12
ZL1000
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