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    38W TRANSISTOR Search Results

    38W TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    38W TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LM3886

    Abstract: datasheet LM3886T LM3886 circuit diagram LM3886T LM3886T IC 200 watts audio power amp transistors LM3886TF lm3886 output circuit LM388 lm3886 Data sheet
    Text: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD+N from


    Original     		PDF LM3886 20kHz. LM3886, datasheet LM3886T LM3886 circuit diagram LM3886T LM3886T IC 200 watts audio power amp transistors LM3886TF lm3886 output circuit LM388 lm3886 Data sheet

    LM3886 circuit diagram

    Abstract: LM3886 LM3886TF lm3886 output circuit lm3886 application note LM3886TF circuits 68w transistor lm3886 amp pcb LM3886T IC woofer amp circuit diagram
    Text: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD+N from


    Original     		PDF LM3886 20kHz. LM3886, LM3886 circuit diagram LM3886TF lm3886 output circuit lm3886 application note LM3886TF circuits 68w transistor lm3886 amp pcb LM3886T IC woofer amp circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SSQE48T25015 DC-DC CONVERTER 36-75VDC Input; 1.5VDC, 25A, 38W Output FEATURES APPLICATIONS • RoHS lead-free solder and lead-solder-exempted products are available • Industry-standard DOSA pinout  Output: 1.5V at 25A  On-board input differential LC-filter


    Original     		PDF SSQE48T25015 36-75VDC EN60950 100ms ZD-02084 October-30-2013

    transistor 68W

    Abstract: LM3886 68w transistor LM3886 circuit diagram LM3886 Overture Audio Power Amplifier Series
    Text: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD + N from


    Original     		PDF LM3886 LM3886, AN-898: transistor 68W 68w transistor LM3886 circuit diagram LM3886 Overture Audio Power Amplifier Series

    LM3886

    Abstract: datasheet lm3886 LM3886 circuit diagram LM3886TF lm3886t lm3886 an lm3886 output circuit LM3886TF circuits LM3886T IC 0118
    Text: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD+N from


    Original     		PDF LM3886 20kHz. LM3886, datasheet lm3886 LM3886 circuit diagram LM3886TF lm3886t lm3886 an lm3886 output circuit LM3886TF circuits LM3886T IC 0118

    68w transistor

    Abstract: transistor 68W LM3886 Overture Audio Power Amplifier Series trouble shorting top switch 249 LM3886 circuit diagram lm3886 lm3886 output circuit LM388
    Text: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD+N from


    Original     		PDF LM3886 20kHz. LM3886, AN-898: 5-Aug-2002] 68w transistor transistor 68W LM3886 Overture Audio Power Amplifier Series trouble shorting top switch 249 LM3886 circuit diagram lm3886 output circuit LM388

    datasheet lm3886

    Abstract: LM3886 lm3886tf LM3886 circuit diagram LM3886T datasheet LM3886T operational amplifier discrete schematic 12v class d amplifier 40W LM3886TF circuits lm3886t with application notes
    Text: LM3886 Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w Mute General Description Features The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4X load and 38W into 8X with 0 1% THD a N from


    Original     		PDF LM3886 LM3886 20-3A datasheet lm3886 lm3886tf LM3886 circuit diagram LM3886T datasheet LM3886T operational amplifier discrete schematic 12v class d amplifier 40W LM3886TF circuits lm3886t with application notes

    LM3886

    Abstract: LM3886T LM3886T IC lm3886 output circuit datasheet lm3886 LM3886TF TA11B TF11B DS011833 lm3886 application note
    Text: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD + N from


    Original     		PDF LM3886 LM3886, LM3886T LM3886T IC lm3886 output circuit datasheet lm3886 LM3886TF TA11B TF11B DS011833 lm3886 application note

    38w smd transistor

    Abstract: 38w transistor
    Text: User’s Manual 16 R8C/38W Group, R8C/38X Group, R8C/38Y Group, R8C/38Z Group User’s Manual: Hardware RENESAS MCU R8C Family / R8C/3x Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


    Original     		PDF R8C/38W R8C/38X R8C/38Y R8C/38Z o2-8175-9670 R01UH0065EJ0110 38w smd transistor 38w transistor

    NTE480

    Abstract: transistor 38W
    Text: NTE480 Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions.


    Original     		PDF NTE480 512MHz NTE480 512MHz 470MHz transistor 38W

    Untitled

    Abstract: No abstract text available
    Text: EIC4450-8 4.40-5.00 GHz 8W Internally Matched Power FET UPDATED 11/15/2006 FEATURES • • • • • • • • 4.4 – 5.0 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 10.5 dB Power Gain at 1dB Compression


    Original     		PDF EIC4450-8 EIC4450-8

    2N7081

    Abstract: No abstract text available
    Text: 2N7081 Siliconix NĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 100 0.15 13 TOĆ257AB Hermetic Package D G Case Isolated S G D S NĆChannel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF 2N7081 O257AB P36736Rev. 2N7081

    A 1469 mosfet

    Abstract: RD30HVF1 transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		PDF RD30HVF1 175MHz RD30HVF1 175MHz A 1469 mosfet transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin

    STK4152

    Abstract: STK4152II transistor 38W en220 STK4152 II 30Wmin
    Text: Ordering number: EN2202B Thick Film Hybrid IC STK4152II AF Power Amplifier Split Power Supply (30W + 30W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4152II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.


    Original     		PDF EN2202B STK4152II STK4102II STK4152II) STK4101V STK4101II STK4152II] STK4152 STK4152II transistor 38W en220 STK4152 II 30Wmin

    STK4152II

    Abstract: en220 STK4152 STK4152 II transistor 38W 4040 pin-compatible 50Hz sine wave filter circuit SAMPLE TRANSISTOR stk4152-ii AN 22022
    Text: Ordering number: EN2202B Thick Film Hybrid IC STK4152II AF Power Amplifier Split Power Supply (30W + 30W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4152II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.


    Original     		PDF EN2202B STK4152II STK4102II STK4152II) STK4101V STK4101II STK4152II] STK4152II en220 STK4152 STK4152 II transistor 38W 4040 pin-compatible 50Hz sine wave filter circuit SAMPLE TRANSISTOR stk4152-ii AN 22022

    STK4171V 18 PIN

    Abstract: STK4171 STK4171V 2136B STK4171-V STK4101 STK4101V stk4171 voltage rating resistor fix value MG-200
    Text: Ordering number: 2136B Thick Film Hybrid IC STK4171V AF Power Amplifier Split Power Supply (40W + 40W min, THD = 0.08%) Features Package Dimensions • Pin-compatible with the STK4102II series. The STK4101V series use the same package and are available for output 15W to 50W.


    Original     		PDF 2136B STK4171V STK4102II STK4101V STK4171V] STK4171V 18 PIN STK4171 STK4171V 2136B STK4171-V STK4101 stk4171 voltage rating resistor fix value MG-200

    transistor 636 mitsubishi

    Abstract: rd30 100OHM RD30HUF1 RD30HUF1-101 742 mosfet 636 MOSFET TRANSISTOR transistor 1734
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.


    Original     		PDF RD30HUF1 520MHz RD30HUF1 520MHz RD30HUF1-101 transistor 636 mitsubishi rd30 100OHM RD30HUF1-101 742 mosfet 636 MOSFET TRANSISTOR transistor 1734

    100OHM

    Abstract: RD30HUF1 IDQ10
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.


    Original     		PDF RD30HUF1 520MHz RD30HUF1 520MHz 100OHM IDQ10

    A 1469 mosfet

    Abstract: Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM RD30HVF1 mosfet 800 v MITSUBISHI RF POWER MOS FET
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		PDF RD30HVF1 175MHz RD30HVF1 175MHz A 1469 mosfet Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM mosfet 800 v MITSUBISHI RF POWER MOS FET

    transistor D 1666

    Abstract: MITSUBISHI RF POWER MOS FET RD30HVF1 RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		PDF RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 transistor D 1666 MITSUBISHI RF POWER MOS FET RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET

    D38W7

    Abstract: 70MM D32W8 D38W10 D38W12 D38W8 D38W9 D38W7-D38W14
    Text: Silicon r " - j i f= 11— & Transistors i D38W7-14 The General Electric D38W7-D38W14 are NPN, silicon, planar, epitaxial transistors designed for low noise, high gain amplifier applications. FEATURES • • Low noise figure < 2db High voltage rating, 80V


    OCR Scan     		PDF D38W7-D38W14 Ta-25-C D38W7 70MM D32W8 D38W10 D38W12 D38W8 D38W9

    SOT123 Package

    Abstract: SOT123 BLF244 International Power Sources SOT-123
    Text: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability


    OCR Scan     		PDF BLF244 711002b OT123 7110fi5b T-39-11 SOT123 Package SOT123 BLF244 International Power Sources SOT-123

    STK41521

    Abstract: STK4152II STK41521I
    Text: Ordering number: EN2202B Thick Film Hybrid 1C STK4152 II AF Power Amplifier Split Power Supply (30W + 30W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4152II) and STK4101V series (high-grade type) are pin-compatible in the out­


    OCR Scan     		PDF EN2202B STK4152 STK4102II STK4152II) STK4101V STK4101II STK4152II] 00507bS STK415211 STK41521 STK4152II STK41521I

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN2136B _ Thick Film Hybrid IC _ STK4171V AF Power Amplifier Split Power Supply (40W + 40W min, THD = 0.08%) Features Package Dimensions • Pin-compatible with the STK4102II series. The


    OCR Scan     		PDF EN2136B STK4171V STK4102II STK4101V STK4171V