68W SOT
Abstract: ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE
Text: Small CHIPS for big visions Schottky Diodes h t t p : / / w w w. i n f i n e o n . c o m Never stop thinking. max. max. typ typ t ion lica V R=0 V CT UF ( typ App ) IF = 10 m A ) IF = 1m A UF ( IF Sin gle Dua l iso lat e Dua d l se ries Dua l co m. Cat Dua
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B132-H7456-GI-X-7600
68W SOT
ultra low noise 12GHz
64W SOT23
AUs SOT363
BAS 40-04 Infineon
BAS 68-04
BAT 43 - 46 - 85 - 86
61 SIEMENS
DIODE BAT 19
SOT143 DUAL DIODE
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Infineon technology roadmap for mosfet
Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
Text: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.
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B191-H7496-G1-X-7600
Infineon technology roadmap for mosfet
germanium transistor pnp smd
smd mosfet sot-363
microwave transistor siemens bfp 420
varactor flip chip
radar 77 ghz sige
Infineon automotive semiconductor technology roadmap
transistor SMD DK qs
siemens spc 2
SiGe PNP transistor
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PRF10
Abstract: MBC13916 MBC13916T1 MRFIC0916 937 motorola 0933 34 motorola zc 527
Text: Order this document by MBC13916/D MBC13916 The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is
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MBC13916/D
MBC13916
MBC13916
MRFIC0916
MRFIC0916,
PRF10
MBC13916T1
937 motorola
0933 34
motorola zc 527
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motorola zc 527
Abstract: S12 sot 23-6
Text: MBC13916 The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is
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MBC13916
MBC13916
MRFIC0916
MRFIC0916,
motorola zc 527
S12 sot 23-6
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Untitled
Abstract: No abstract text available
Text: Order this document by MBC13916/D MBC13916 The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is
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MBC13916/D
MBC13916
MBC13916
MRFIC0916
MRFIC0916,
MBC13916/D
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MBC13916
Abstract: MBC13916T1 MRFIC0916 motorola zc 527 Motorola Zc 34
Text: Freescale Semiconductor, Inc. Order this document by MBC13916/D MBC13916 The RF Building Block Series Freescale Semiconductor, Inc. General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with
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MBC13916/D
MBC13916
MBC13916
MRFIC0916
MRFIC0916,
MBC13916T1
motorola zc 527
Motorola Zc 34
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MAX6809
Abstract: ST 9727 st 9635 st 9548 12x12 bga thermal resistance MAX232CWE 9846B MAX232 integrated chips 9836 maxim iso 9717
Text: November 1999 Surface-Mount Devices Reliability Report This report presents reliability data for Maxim’s surface-mount devices, including the results of extensive reliability stress tests performed solely on epoxy surface-mount packages since 1995. Maxim’s surface-mount packages are subjected to standard
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1-888-MAXIM-IC
MAX6809
ST 9727
st 9635
st 9548
12x12 bga thermal resistance
MAX232CWE
9846B
MAX232 integrated chips
9836 maxim
iso 9717
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marking 47 gain block sot-363
Abstract: No abstract text available
Text: MBC13720 The RF Building Block Series SiGe:C Low Noise Amplifier with Bypass Switch The MBC13720 is a high IP3, low noise amplifier designed for 400 MHz to 2.4 GHz multistandard wireless applications. The input and output match is external to allow maximum design flexibility. The LNA has two selectable
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MBC13720
MBC13720
marking 47 gain block sot-363
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bc352
Abstract: KM90 BC370 K9015 2N3341 2N5242 OC201 2u 64 diode
Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index
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MPS5142
MPS5143
2N998
2N3677
2N2411
2N1991
PN5143
2N5143
2N2802
2N2803
bc352
KM90
BC370
K9015
2N3341
2N5242
OC201
2u 64 diode
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608-25
Abstract: sot-363 651 602 SOT-363 transistor motorola 236 MBC13720 MBC13720T1 NT 101
Text: Order this document by MBC13720/D MBC13720 The RF Building Block Series SiGe:C Low Noise Amplifier with Bypass Switch The MBC13720 is a high IP3, low noise amplifier designed for 400 MHz to 2.4 GHz multistandard wireless applications. The input and output match is
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MBC13720/D
MBC13720
MBC13720
608-25
sot-363 651
602 SOT-363
transistor motorola 236
MBC13720T1
NT 101
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Untitled
Abstract: No abstract text available
Text: Order this document by MBC13720/D MBC13720 The RF Building Block Series SiGe:C Low Noise Amplifier with Bypass Switch The MBC13720 is a high IP3, low noise amplifier designed for 400 MHz to 2.4 GHz multistandard wireless applications. The input and output match is
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MBC13720/D
MBC13720
MBC13720
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2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1
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ZMM22
ZMM24
ZMM27
ZMM43
ZMM47
2x062h
gk105
1SS216
GK104
SMD Transistors w06
D20SB80
SMD marking 5As
D25SB80
LRB706F-40T1G
2x062
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S1239
Abstract: rf power amplifier 850 MHZ
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFIC0915 General Purpose RF Cascode Amplifier The MRFIC0915 is a cost–effective, high isolation cascode silicon monolithic amplifier in the industry standard SOT–143 surface mount package designed for general purpose RF applications. The device is a lower current
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MRFIC0915
MRFIC0916
S1239
rf power amplifier 850 MHZ
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Untitled
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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MRF947T1 equivalent
Abstract: mrf9411 285-2 Motorola 581 "Small Signal Amplifiers" MRF9411L MRF947T1 datasheet MRF9411LT1 177.138 MOTOROLA 934
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.
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MMBR941LT1/D
MMBR941
MRF947
MRF9411
MMBR941LT1,
MMBR941BLT1
MMBR941
MRF947
MRF9411
MMBR941/D
MRF947T1 equivalent
285-2
Motorola 581
"Small Signal Amplifiers"
MRF9411L
MRF947T1 datasheet
MRF9411LT1
177.138
MOTOROLA 934
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NE021 microwave oscillator
Abstract: 2SC2570 NE02132 ic 18752 ic 2SC2570 NE02130 2sc2570 transistor NE02100 K 1723 2SC4225
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION
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NE021
NE021
NE02107
OT-23)
34-6393/FAX
NE021 microwave oscillator
2SC2570
NE02132
ic 18752
ic 2SC2570
NE02130
2sc2570 transistor
NE02100
K 1723
2SC4225
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Untitled
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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Untitled
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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702 P transistor
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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Untitled
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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SAA 1006
Abstract: si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression
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NE021
NE02107
OT-23)
SAA 1006
si 18752
K 1723
NE02132
2sc2570 transistor
SAA 1058
saa 5000
0958K
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JF11
Abstract: NE02133-T1B
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LA RGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 G Hz Gain Com pression
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NE021
NE02107
OT-23)
NE2100
NE02107/NE02107B
NE02130-T1
NE02133-T1B
JF11
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2SC2570
Abstract: 2sc2570 transistor NE02132
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,
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NE021
NE02107
PACKAGEOUTUNE33
OT-23)
b427525
00b5b07
2SC2570
2sc2570 transistor
NE02132
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NE021 microwave oscillator
Abstract: 2SC2570 si 18752 xj-05 transistor 2sc2570 1A12 nec
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION_
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NE021
NE02107
OT-23)
6393/FAX
NE021 microwave oscillator
2SC2570
si 18752
xj-05
transistor 2sc2570
1A12 nec
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