NE02100 Search Results

NE02100 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
NE02100	NEC	NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE02100	NEC	NPN silicon high frequency transistor.	Original	PDF
NE02100	NEC	4.5 GHz, 25 V, NPN silicon high frequency transistor	Scan	PDF

NE02100 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
8F157 Abstract: relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s	Original	NE021 NE02135 NE02139 07/07B NE02133" NE02133 8F1573FD7D76BE9F795396E6F54D44. 30-Sep-2010 8F157 relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D	PDF
XM0830SJ Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563 Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563	PDF
BGT24MTR11 Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586 Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586	PDF
Micro-X Marking 865 Abstract: Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION	Original	NE021 NE02107 NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B NE02135 NE02139-T1 Micro-X Marking 865 Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F	PDF
s-parameter s11 s12 s21 Abstract: 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431 Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s	Original	NE021 NE02135 NE02139 NE021 NE02100 NE02107/NE02107B NE02133-T1B NE02139-T1 s-parameter s11 s12 s21 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431	PDF
NE02135 Abstract: NE021 microwave oscillator 2SC2149 2SC2351 NE021 NE02100 NE02107 NE02133 NE02139 MICROWAVE TRANSISTOR Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION	Original	NE021 NE021 NE02107 NE2100 NE02107/NE02107B NE02133-T1B NE02135 NE02139-T1 24-Hour NE02135 NE021 microwave oscillator 2SC2149 2SC2351 NE02100 NE02133 NE02139 MICROWAVE TRANSISTOR	PDF
NE021 microwave oscillator Abstract: 2SC2570 NE02132 ic 18752 ic 2SC2570 NE02130 2sc2570 transistor NE02100 K 1723 2SC4225 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION	Original	NE021 NE021 NE02107 OT-23) 34-6393/FAX NE021 microwave oscillator 2SC2570 NE02132 ic 18752 ic 2SC2570 NE02130 2sc2570 transistor NE02100 K 1723 2SC4225	PDF
NE02107 Abstract: 2SC2149 2SC2351 NE021 NE02100 NE02133 NE02135 NE02139 18752 60S12 Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION	Original	NE021 07/07B NE021 NE02100 NE02107/NE02107B NE02133-T1B NE02135 NE02139-T1 NE02107 2SC2149 2SC2351 NE02100 NE02133 NE02135 NE02139 18752 60S12	PDF
2sc3052ef Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor	PDF
2SC2570 Abstract: 2sc2570 transistor NE02132 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,	OCR Scan	NE021 NE02107 PACKAGEOUTUNE33 OT-23) b427525 00b5b07 2SC2570 2sc2570 transistor NE02132	PDF
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720	PDF
UPA802T Abstract: BD304 NE02132 Text: Low Noise Bipolar Transistors ' •TV#’ VCE V S x n l* Ic TYP (mA) (dB) * VIP Hn te TYP MAX (WAJ Package Pfcg. Faxon Dwnand ücloaning Dee No. DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 3 .5 7.5 8.0 120 35 (SOT-363) S06 D MEVO UPA801T 2.0 3 7 1.2 -	OCR Scan	UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T OT-363) BD304 NE02132	PDF
73412 Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318 Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7	OCR Scan	NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318	PDF
NE02136 Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package Text: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco	OCR Scan	b427414 000137S NE021 3l-17 NE02136 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package	PDF

UPC2712B Abstract: UPB1509B upc2709b NE85608-L NE68108 NE73408 UPB1508B NE85608 NE41607 NE02103 Text: G E T -3 0 6 9 8 Rev.F Specification Control D raw ing G rade L Devices For S p ace Application = H i-R e l P rep ared on NEC Com pound S ilic o n D ev ic e = : D ec e m b er 1 6 , 2 0 0 2 S e m ic o n d u c to r D evices, Ltd. 1 /3 7 G E T -3 0 6 9 8 Rev.E	OCR Scan	GET-30698 NE89400 UPB584B 10Cycies Page31 NE02100 Page35/37 UPC1677P 1678P UPC2712B UPB1509B upc2709b NE85608-L NE68108 NE73408 UPB1508B NE85608 NE41607 NE02103	PDF
JF11 Abstract: NE02133-T1B Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LA RGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 G Hz Gain Com pression	OCR Scan	NE021 NE02107 OT-23) NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B JF11	PDF
SAA 1006 Abstract: si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression	OCR Scan	NE021 NE02107 OT-23) SAA 1006 si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K	PDF
NE021 microwave oscillator Abstract: 2SC2570 si 18752 xj-05 transistor 2sc2570 1A12 nec Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION_	OCR Scan	NE021 NE02107 OT-23) 6393/FAX NE021 microwave oscillator 2SC2570 si 18752 xj-05 transistor 2sc2570 1A12 nec	PDF
uPA63 Abstract: UPA827TF UPA831TF NE685 Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening	OCR Scan	UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685	PDF
transistor IR 324 C Abstract: transistor selection guide Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency	OCR Scan	NE46134 NE85634 NE46134 NE46734 NE68018-T1 transistor IR 324 C transistor selection guide	PDF
2sc2570 transistor Abstract: t0-t01 2sc2570 NE02132 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 1 8 .5 d B at 5 0 0 M H z • LOW NOISE FIGURE: 1 .5 dB a t 5 0 0 M H z • HIGH POWER GAIN: 12 d B at 2 G H z • LARGE DYNAMIC RANGE: 19 d B m at 1 dB ,	OCR Scan	NE021 OT-23) 2sc2570 transistor t0-t01 2sc2570 NE02132	PDF
UPA827TF Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363 Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T	OCR Scan	UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA827TF UPA833TF UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363	PDF

NE02100 Search Results

NE02100 Datasheets (3)

NE02100 Datasheets Context Search

8F157

XM0830SJ

BGT24MTR11

Micro-X Marking 865

s-parameter s11 s12 s21

NE02135

NE021 microwave oscillator

NE02107

2sc3052ef

2SC2570

SVI 3104 c

UPA802T

73412

NE02136

UPC2712B

JF11

SAA 1006

NE021 microwave oscillator

uPA63

transistor IR 324 C

2sc2570 transistor

UPA827TF