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    NE24318 Search Results

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    NE24318 Price and Stock

    NEC Electronics Group NE243187

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NE243187 400
    • 1 $135
    • 10 $135
    • 100 $101.25
    • 1000 $101.25
    • 10000 $101.25
    		Buy Now
    NE243187 1
    • 1 $73.125
    • 10 $73.125
    • 100 $73.125
    • 1000 $73.125
    • 10000 $73.125
    		Buy Now
    NE243187 1
    • 1 $173.941
    • 10 $173.941
    • 100 $173.941
    • 1000 $173.941
    • 10000 $173.941
    		Buy Now

    NEC Electronics Group NE243187D

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NE243187D 1
    • 1 $73.125
    • 10 $73.125
    • 100 $73.125
    • 1000 $73.125
    • 10000 $73.125
    		Buy Now

    NE24318 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE243187 NEC NPN Medium Power Oscillator Transistor Scan PDF
    NE243188 NEC NPN Medium Power Oscillator Transistor Scan PDF

    NE24318 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE24300

    Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
    Text: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator


    OCR Scan     		PDF b4E7414 00D2371 NE243 NE24300 NE243187 NE243188 NE243287 NE243288 transistor 81 110 w 63 transistor 81 110 w 85 NE243499 NE24318

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    NE243187

    Abstract: NE243188
    Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The


    OCR Scan     		PDF NE243 NE24300 NE243187 NE243188 NE243287 NE243288 NE243499

    73412

    Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7


    OCR Scan     		PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318

    2SC3096

    Abstract: 2SC3071 2SC3082K 2SC3058 2SC3067 2SC3089 2SC3056 2SC3056A 2SC3057 2SC3058A
    Text: - 144 - 13=25*0, *EP(ÎTc=25t; M ¿ ít 2SC3056 £ 1 V'CBO V’ cEO lc(DC) Pc Pc* ICBO (max) (V) (V) (A) (W) (W) (uk) VcB (V) M W 1SÈ , . .»F Unin) (max; (Ta=25tC ) OEPiâtypig] / «BEVadw V’ CE (V) (max) (V) Ic/ÎE (A) (V) le (A) 1b (A) SW Reg/DDC 450


    OCR Scan     		PDF 2SC3056 2SC3056A 2SC3057 2SC3058 2SC3058A 2SC3059 2SC3060 3078M 2SC3079M 2SC3080 2SC3096 2SC3071 2SC3082K 2SC3058 2SC3067 2SC3089 2SC3056 2SC3058A

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


    OCR Scan     		PDF S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V

    2SC2978

    Abstract: 2SC2936 2SC2950 2SA1227 2SC2954 2SC2918 2SC2932 2SC2933 2SC2936H 2SC2941
    Text: - 140 - Ta=25?C 1*EP(àTc=25‘1C M 2SC2932 2SC2933 2SC2936 2SC2936H 2SC2941 2SC2944 2SC2946 2SC2946(1) 2SC2949 2SC2950 2SC2951 2SC2952 2SC2953 2SC2954 2SC2958 2SC2959 2SC296Ö 2SC2964 2SC2965 2SC2975 2SC2976 2SC2977 2SC2978 2SC2979 2SC2981 2SC2982 2SC2983


    OCR Scan     		PDF 2SC2932 2SC2933 2SC2936 2SC2936H 2SC2941 2SC2944 2SC2946 2SC2978 O-220ABB 2SC2978 2SC2950 2SA1227 2SC2954 2SC2918 2SC2932 2SC2933

    transistor K 1413

    Abstract: 5607 transistor E243287 chip die npn transistor NE243287
    Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH O SCILLATO R POW ER O UTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The


    OCR Scan     		PDF NE243 NE24300 transistor K 1413 5607 transistor E243287 chip die npn transistor NE243287

    NE24318

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by


    OCR Scan     		PDF NE243 NE24300 NE243187 NE243188 NE243287 NE243288 NE243499 IS12I NE24318