NE243287
Abstract: No abstract text available
Text: NE243287 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)16 V(BR)CBO (V)25 I(C) Max. (A)220m Absolute Max. Power Diss. (W)5.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)15
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NE243287
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NE24300
Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
Text: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator
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b4E7414
00D2371
NE243
NE24300
NE243187
NE243188
NE243287
NE243288
transistor 81 110 w 63
transistor 81 110 w 85
NE243499
NE24318
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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NE243187
Abstract: NE243188
Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The
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NE243
NE24300
NE243187
NE243188
NE243287
NE243288
NE243499
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73412
Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7
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NE46134
NE85634
NE46734
NE85634
NE46134
NE85619
NE68119
73412
NE64535
CHIP transistor 348
fvh 38
p08c
NE68039
NE889
NE02135
NE64500
NE24318
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2sb504
Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St
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S029747
SS963&
2sb504
2t306
2N5983
2SD588
2sd73
2sc497
HD6801V
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2SC2978
Abstract: 2SC2936 2SC2950 2SA1227 2SC2954 2SC2918 2SC2932 2SC2933 2SC2936H 2SC2941
Text: - 140 - Ta=25?C 1*EP(àTc=25‘1C M 2SC2932 2SC2933 2SC2936 2SC2936H 2SC2941 2SC2944 2SC2946 2SC2946(1) 2SC2949 2SC2950 2SC2951 2SC2952 2SC2953 2SC2954 2SC2958 2SC2959 2SC296Ö 2SC2964 2SC2965 2SC2975 2SC2976 2SC2977 2SC2978 2SC2979 2SC2981 2SC2982 2SC2983
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2SC2932
2SC2933
2SC2936
2SC2936H
2SC2941
2SC2944
2SC2946
2SC2978
O-220ABB
2SC2978
2SC2950
2SA1227
2SC2954
2SC2918
2SC2932
2SC2933
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transistor K 1413
Abstract: 5607 transistor E243287 chip die npn transistor NE243287
Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH O SCILLATO R POW ER O UTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The
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NE243
NE24300
transistor K 1413
5607 transistor
E243287
chip die npn transistor
NE243287
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NE24318
Abstract: No abstract text available
Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by
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NE243
NE24300
NE243187
NE243188
NE243287
NE243288
NE243499
IS12I
NE24318
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transistor IR 324 C
Abstract: transistor selection guide
Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency
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NE46134
NE85634
NE46134
NE46734
NE68018-T1
transistor IR 324 C
transistor selection guide
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