Untitled
Abstract: No abstract text available
Text: NE243288 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)16 V(BR)CBO (V)25 I(C) Max. (A)220m Absolute Max. Power Diss. (W)5.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)15
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NE243288
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NE24300
Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
Text: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator
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b4E7414
00D2371
NE243
NE24300
NE243187
NE243188
NE243287
NE243288
transistor 81 110 w 63
transistor 81 110 w 85
NE243499
NE24318
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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NE243187
Abstract: NE243188
Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The
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NE243
NE24300
NE243187
NE243188
NE243287
NE243288
NE243499
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73412
Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7
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NE46134
NE85634
NE46734
NE85634
NE46134
NE85619
NE68119
73412
NE64535
CHIP transistor 348
fvh 38
p08c
NE68039
NE889
NE02135
NE64500
NE24318
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2SC3096
Abstract: 2SC3071 2SC3082K 2SC3058 2SC3067 2SC3089 2SC3056 2SC3056A 2SC3057 2SC3058A
Text: - 144 - 13=25*0, *EP(ÎTc=25t; M ¿ ít 2SC3056 £ 1 V'CBO V’ cEO lc(DC) Pc Pc* ICBO (max) (V) (V) (A) (W) (W) (uk) VcB (V) M W 1SÈ , . .»F Unin) (max; (Ta=25tC ) OEPiâtypig] / «BEVadw V’ CE (V) (max) (V) Ic/ÎE (A) (V) le (A) 1b (A) SW Reg/DDC 450
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2SC3056
2SC3056A
2SC3057
2SC3058
2SC3058A
2SC3059
2SC3060
3078M
2SC3079M
2SC3080
2SC3096
2SC3071
2SC3082K
2SC3058
2SC3067
2SC3089
2SC3056
2SC3058A
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transistor K 1413
Abstract: 5607 transistor E243287 chip die npn transistor NE243287
Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH O SCILLATO R POW ER O UTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The
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NE243
NE24300
transistor K 1413
5607 transistor
E243287
chip die npn transistor
NE243287
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NE24318
Abstract: No abstract text available
Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by
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NE243
NE24300
NE243187
NE243188
NE243287
NE243288
NE243499
IS12I
NE24318
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