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    4N65

    Abstract: mosfet 4n65 3VD297650YL
    Text: 3VD297650YL 3VD297650YL 高压MOSFET芯片 描述 Ø 3VD297650YL为采用硅外延工艺制造的N沟道增 强型650V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；


    Original     		PDF 3VD297650YL 3VD297650YL 3VD297650YLN 650VMOS O-220 3200m 2760m 4N65 mosfet 4n65

    Untitled

    Abstract: No abstract text available
    Text: 3VD297650YL 3VD297650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD297650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.


    Original     		PDF 3VD297650YL 3VD297650YL O-220

    4n65

    Abstract: mosfet 4n65
    Text: 3VD297650YL 3VD297650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD297650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltage-blocking capability.


    Original     		PDF 3VD297650YL 3VD297650YL O-220 3200m 2760m 4n65 mosfet 4n65