4N65
Abstract: mosfet 4n65 3VD297650YL
Text: 3VD297650YL 3VD297650YL 高压MOSFET芯片 描述 Ø 3VD297650YL为采用硅外延工艺制造的N沟道增 强型650V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；
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3VD297650YL
3VD297650YL
3VD297650YLN
650VMOS
O-220
3200m
2760m
4N65
mosfet 4n65
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Untitled
Abstract: No abstract text available
Text: 3VD297650YL 3VD297650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD297650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.
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Original
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PDF
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3VD297650YL
3VD297650YL
O-220
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4n65
Abstract: mosfet 4n65
Text: 3VD297650YL 3VD297650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD297650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltage-blocking capability.
|
Original
|
PDF
|
3VD297650YL
3VD297650YL
O-220
3200m
2760m
4n65
mosfet 4n65
|