7N60
Abstract: No abstract text available
Text: 3VD395600YL 3VD395600YL 高压MOSFET芯片 描述 Ø 3VD395600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；
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3VD395600YL
3VD395600YL
3VD395600YLN
600VMOS
O-220,
4040m
3880m
O-220
7N60
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7N60
Abstract: No abstract text available
Text: 3VD395600YL 3VD395600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD395600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced 3 1
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3VD395600YL
3VD395600YL
O-220
7N60
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Untitled
Abstract: No abstract text available
Text: 3VD395600YL 3VD395600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD395600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced voltage-blocking capability;
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PDF
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3VD395600YL
3VD395600YL
O-220
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7N60
Abstract: No abstract text available
Text: 3VD395600YL 3VD395600YL 高压MOSFET芯片 描述 ¾ 3VD395600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；
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Original
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PDF
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3VD395600YL
3VD395600YL
3VD395600YLN
600VMOS
O-220,
O-220
600VVGS
10VID
30VVDS
7N60
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