7N60C

Abstract: TO-220 footprint
Contextual Info: HiPerFASTTM IGBT LightspeedTM Series VCES IC25 VCE sat tfi IXGA 7N60C IXGP 7N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

DIODE 349

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

DIODE 349

Abstract: 7n60z
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

7N60C

Contextual Info: IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series VCES IC25 VCE sat typ tfi = 600 V = 14 A = 2.0 V = 45 ns Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching

7n60b

Abstract: DS98977
Contextual Info: Advanced Technical Information IXGA 7N60BD1 IXGP 7N60BD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V VCES IC25 VCE sat tfi = 600 V

7N60

Contextual Info: 7N60 7 Amps， ，600Volts N-Channel MOSFET • Description The 7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

7n60b

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60-Q Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

7N60B

Abstract: 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

7N60C

Contextual Info: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions IXGA 7N60C IXGP 7N60C Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

Contextual Info: Advanced Technical Information IXGA 7N60BD1 IXGP 7N60BD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R VGES VCES IC25 VCE sat tfi = 600 V = 14 A = 2.0 V = 150ns Maximum Ratings 600 600 V Continuous

7N60B

Contextual Info: nixYS AdvancedTechnical Information HiPerFAST IGBT V ¥ ces IXGA 7N60B IXGP 7N60B 600 V 14 A 1.5 V 150 ns ^C25 VCE sat typ % Maximum Ratings Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V V CGR T,J = 25°C to 150°C; RGE = 1 MD 600 V VGES Continuous

7N60C

Abstract: LI 20 AB
Contextual Info: AdvancedTechnical Information HiPerFAST IGBT Lightspeed™ Series V CES IXGA 7N60C IXGP 7N60C ^C25 V CE sat typ »„ Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V VC G R T,J = 2 5 °C to 1 5 0 °C ; RrCab = 1 MU 600 V V G ES Continuous ±20 V

7N60C

Abstract: TO-220AB footprint
Contextual Info: IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A IC90 TC = 90°C

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: Advanced Technical Information IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C

UTC7N60L

Abstract: 7N60L 7N60LL 7N60L-A 20v 3a ultra fast recovery diode
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60L Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60K Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

7n60a

Abstract: mosfet 600V 7A N-CHANNEL 7N60AL
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching

7N60P

Contextual Info: PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P VDSS = 600 ID25 = 7 RDS on ≤ 1.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V VGS

Contextual Info: HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R VGES VCES IC25 VCE sat tfi IXGA 7N60C IXGP 7N60C Maximum Ratings 600 = 1 MΩ V Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A

Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat tfi IXGA 7N60B IXGP 7N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A IC90 TC = 90°C

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60K-MTQ Preliminary Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high