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    7N60L Search Results

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    7N60L Price and Stock

    Rochester Electronics LLC FGPF7N60LSDTU

    N-CHANNEL IGBT
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    DigiKey FGPF7N60LSDTU Tube 4,927 544
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    onsemi FGPF7N60LSDTU

    IGBT 600V 14A 45W TO220F
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    DigiKey FGPF7N60LSDTU Tube 1,000
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    Helical Wire Inc M4X.7N6.0L

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    Bisco Industries M4X.7N6.0L 5
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    Fairchild Semiconductor Corporation FGPF7N60LSDTU

    Insulated Gate Bipolar Transistor, 14A, 600V, N-Channel, TO-220AB '
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    Rochester Electronics FGPF7N60LSDTU 4,927 1
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    United Technologies Corporation UTC7N60L

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics UTC7N60L 2,949
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    7N60L Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    7N60L Unisonic Technologies 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF
    7N60L-TA3-T Unisonic Technologies 7.4 Amps, 600 Volts N-CHANNEL MOSFET Original PDF

    7N60L Datasheets Context Search

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    UTC7N60L

    Abstract: 7N60L 7N60LL 7N60L-A 20v 3a ultra fast recovery diode
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60L Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 7N60L 7N60L 7N60LL QW-R502-189 UTC7N60L 7N60LL 7N60L-A 20v 3a ultra fast recovery diode

    UTC7N60L

    Abstract: 7N60L 7N60LL power mosfet 600v 7N60L-A
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60L Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 7N60L 7N60L 7N60LL 7N60LG QW-R502-189 UTC7N60L 7N60LL power mosfet 600v 7N60L-A

    7n60b

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 7N60L QW-R502-076 7n60b

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60-Q Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60-Q 7N60-Q 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-Tt QW-R502-983.

    7N60B

    Abstract: 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 7N60L 7N60G QW-R502-076 7N60B 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60

    7n60f

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60-F Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60-F 7N60-F 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60t QW-R502-982. 7n60f

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TF3-T 7N60L-TFt QW-R502-076.

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F 7N60L QW-R502-076

    7N60G-TF3-T

    Abstract: 7N60 7n60f 7n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60-F/7N60-M/7N60-R /7N60-Q) QW-R502-076 7N60G-TF3-T 7N60 7n60f 7n60l

    7N60G-x-TF1

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F 7N60-F/7N60-L/7N60-M/7N60-Q) QW-R502-076 7N60G-x-TF1

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TF3-T 7N60L-TFt QW-R502-076.

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TFt QW-R502-076.

    7N60m

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60-M Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60-M 7N60-M 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TFt QW-R502-996. 7N60m

    7n60b

    Abstract: tr 7n60b 74ATC MOSFET 7N60B D7N60 7N60B free 7N60 600v 4A mosfet
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 7N60L 7N60G QW-R502-076 7n60b tr 7n60b 74ATC MOSFET 7N60B D7N60 7N60B free 7N60 600v 4A mosfet

    7n60f

    Abstract: 7N60 7n60 mosfet 7n60b OF 7N60 7N60A power mosfet 200A ISD74A 7N60G-x TO-262 MOSFET
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F 7N60/7N60-R) 7N60-F/7N60-M/7N60-Q) QW-R502-076 7n60f 7N60 7n60 mosfet 7n60b OF 7N60 7N60A power mosfet 200A ISD74A 7N60G-x TO-262 MOSFET

    7N60G-TF3-T

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60-F/7N60-M/7N60-R /7N60-Q) QW-R502-076 7N60G-TF3-T

    7n60f

    Abstract: UTC7N60 7N60R 7N60G-TF3-T 7n60l 7N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF O-220 O-220F 7N60/7N60-R) 7N60-F/7N60-M/7N60-Q) QW-R502-076 7n60f UTC7N60 7N60R 7N60G-TF3-T 7n60l 7N60

    7N60

    Abstract: OF 7N60 7n60 mosfet 7N60L 7N60L-TA3-T 7N60-TA3-T 7N60-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600 Volts N-CHANNEL MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F 7N60L QW-R502-076 7N60 OF 7N60 7n60 mosfet 7N60L 7N60L-TA3-T 7N60-TA3-T 7N60-TF3-T

    ge tube company

    Abstract: No abstract text available
    Text: 7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Features Description • Low saturation voltage : VCE sat = 1.4 V @ IC = 7A Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides very low conduction and switching losses.The device is designed for Lamp applications where very low On-Voltage


    Original     		PDF FGPF7N60LSD FGPF7N60LSD O-220F FGPF7N60LSDTU ge tube company

    7N60

    Abstract: 7n60 mosfet 7n60f 7N60B 7N60L TO-262 MOSFET OF 7N60 DATASHEET OF 7N60 7N60L-x-T2Q-T mosfet 4b
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F 7N60/7N60-R) 7N60-F/7N60-M/7N60-Q) QW-R502-076 7N60 7n60 mosfet 7n60f 7N60B 7N60L TO-262 MOSFET OF 7N60 DATASHEET OF 7N60 7N60L-x-T2Q-T mosfet 4b

    7N60B

    Abstract: TO-262 MOSFET 7N60 7N60B free mosfet 4b mosfet TEST G7N60 G 7N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F O-220F1 O-262 QW-R502-076 7N60B TO-262 MOSFET 7N60 7N60B free mosfet 4b mosfet TEST G7N60 G 7N60