Untitled
Abstract: No abstract text available
Text: 1N5711 AND 1N6263 Schottky Diodes FEATURES DO-35 ♦ For general purpose applications. ♦ Metal-on-silicon Schottky barrier X device which is protected by a PN X. junction guard ring. The low forward M voltage drop and fast switching make it , ideal for protection of MOS devices, steering,
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OCR Scan
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1N5711
1N6263
DO-35
LL5711
LL6263.
DO-35
3ARD137
3ATQ137
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5711 AND 1N6263 Schottky Diodes FEATURES DO-35 ♦ For general purpose applications. ♦ Metal-on-silicon Schottky barrier X device which is protected by a PN X. junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering,
|
OCR Scan
|
1N5711
1N6263
DO-35
LL5711
LL6263.
DO-35
3ARD137
DDD735b
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PDF
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