3BS transistor
Abstract: marking 3bs transistor 3bs 3bs marking code 3BS MARKING sot323 transistor marking BL SOT323 BC856W BC857W BC858W
Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W FEATURES z Ideally suited for automatic insertion. z Power dissipation. PC=200mW Pb Lead-free APPLICATIONS z General purpose switching and amplification application.
|
Original
|
PDF
|
BC856W/BC857W/BC858W
200mW)
OT-323
BC856W
BC857W
BC858W
3BS transistor
marking 3bs
transistor 3bs
3bs marking code
3BS MARKING
sot323 transistor marking
BL SOT323
BC856W
BC857W
BC858W
|
top marking 1B sot23
Abstract: marking 3bs 3bs marking code BC856-BC860 3BS MARKING MARKING 3gs marking 3Ls SOT23 3ks 3Fs marking transistor 3Fs sot23
Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)
|
Original
|
PDF
|
BC856.
-BC860.
BC846.
-BC850.
BC856A
BC856B
BC856BW
BC857A
top marking 1B sot23
marking 3bs
3bs marking code
BC856-BC860
3BS MARKING
MARKING 3gs
marking 3Ls
SOT23 3ks
3Fs marking transistor
3Fs sot23
|
MARKING 3FS
Abstract: marking 3bs BC846 Infineon BC857 3fs BC857BL3 BC860BW BC856A BC856B BC856BW BC857A
Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package1)
|
Original
|
PDF
|
BC856.
-BC860.
BC846.
-BC850.
BC856A
BC856B
BC856BW
OT323
MARKING 3FS
marking 3bs
BC846 Infineon
BC857 3fs
BC857BL3
BC860BW
BC856A
BC856B
BC856BW
BC857A
|
marking code MS SOT323
Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)
|
Original
|
PDF
|
BC856.
-BC860.
BC846.
-BC850.
BC856A
BC856B
BC856BW
OT323
marking code MS SOT323
BC846
BC850
BC856
BC856A
BC856B
BC856BW
BC857A
BC857B
BC860
|
MARKING 3FS
Abstract: MARKING CODE 21E SOT23 marking 3ks
Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29
|
Original
|
PDF
|
BC856.
-BC860.
BC846.
-BC850.
BC856A
BC856B
BC856BW
BC857A
MARKING 3FS
MARKING CODE 21E SOT23
marking 3ks
|
C2335
Abstract: Q62702-C2335 bc 3as 856W C2298 bc 750 C2292 C2303 marking 2 AW marking code aw
Text: PNP Silicon AF Transistors BC 856W . BC 860W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W, BC 849W, BC 850W NPN
|
Original
|
PDF
|
Q62702-C2335
Q62702-C2292
Q62702-C2293
Q62702-C2294
Q62702-C2295
Q62702-C2296
Q62702-C2297
Q62702-C2298
Q62702-C2299
Q62702-C2300
C2335
Q62702-C2335
bc 3as
856W
C2298
bc 750
C2292
C2303
marking 2 AW
marking code aw
|
3BS transistor
Abstract: transistor 3bs 846T BC856AT BC856BT BC856T SC75 transistor BC 109 Data
Text: BC856T PNP Silicon AF Transistor Preliminary data 3 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75
|
Original
|
PDF
|
BC856T
BC856AT
BC856BT
VPS05996
EHP00381
EHP00380
Jan-08-2002
EHP00382
EHP00379
3BS transistor
transistor 3bs
846T
BC856AT
BC856BT
BC856T
SC75
transistor BC 109 Data
|
transistor packing code 3f
Abstract: marking 3ks BC856B BC856BW BC857A BC857AW BC846 BC850 BC856 BC856A
Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)
|
Original
|
PDF
|
BC856.
-BC860.
BC846.
-BC850.
BC856A
BC856B
BC856BW
OD323
transistor packing code 3f
marking 3ks
BC856B
BC856BW
BC857A
BC857AW
BC846
BC850
BC856
BC856A
|
3BS transistor
Abstract: No abstract text available
Text: BC856T PNP Silicon AF Transistor Preliminary data 3 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75
|
Original
|
PDF
|
BC856T
VPS05996
BC856AT
BC856BT
3BS transistor
|
2N3865
Abstract: 2N3233 2N1069 2N3239 2N3238 2N3236 2N3235 2N3232 2n3713 2N1488
Text: 8365700 SOLID POWER CORP ‘SOLID POWER CORP 95C 0 0099 0 TDF|fi 3bS 7DD DOOODÌT b f TS POWER TRANSISTORS TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS B V c b o BV ceo BV ebo Ic V V V A V Sat Test Voltages Conditions VcE V be Ic Ib V V A A @ hFE MIN MAX Ic A
|
OCR Scan
|
PDF
|
A3tiS700
2N1069
2N1070
2N1487
2N1488
2N1489
2N1490
2N1702
2N2305
2N3232
2N3865
2N3233
2N3239
2N3238
2N3236
2N3235
2n3713
|
AT-60585
Abstract: AT60585 Silicon Bipolar Transistor Silicon Bipolar Transistor Hewlett-Packard 3BS transistor
Text: HE W LET T-PACKARD/ CMPNTS blE D • 44475Ö4 □ D D tìflb4 3bS H H P A AT-60585 Up to 6 GHz Low Noise Silicon Bipolar Transistor T h a t HEW LETT mLEM PA C K AR D 85 Plastic Package Features • • Low Bias Current Operation Low Noise Figure: 1.4 dB typical at 1.0 GHz
|
OCR Scan
|
PDF
|
44475A4
AT-60585
AT-60585
AT60585
Silicon Bipolar Transistor
Silicon Bipolar Transistor Hewlett-Packard
3BS transistor
|
Untitled
Abstract: No abstract text available
Text: SANYO SEMI CONDUCTOR I Ordering n u m b e r: EN4188 CORP S3E ] • 7 cî tî 7 G 7 b G01G1SD 3bS ■ TS AJ | T—52—13—25 Monolithic Digital IC LB1855M No.4188 i 3-Phase Brushless Motor Driver The LB18S5M is a 3-phase brushless motor driver 1C ideally suited for use in VCR drum motor driver.
|
OCR Scan
|
PDF
|
EN4188
G01G1SD
LB1855M
LB18S5M
DG10154
|
7423PC
Abstract: 00k3
Text: NATIONAL SEflICOND { L O G I C } DEE D I bSGUEE □ □t>3bSö S 23 I T -^ -/r C O N N E C T IO N D IA G R A M P IN O U T A 54/7423 EXPANDABLE DUAL 4-IN PU T NOR GATE W ith Strobe O R D E R IN G C O D E : See Section 9 PIN PKG S OUT C O M M E R C IA L G RADE
|
OCR Scan
|
PDF
|
7423P
5423D
7423FC
5423FM
7423PC
00k3
|
Untitled
Abstract: No abstract text available
Text: BD157, B0158 BDI5 7 ,158 NPN PLASTIC POWER TRANSISTORS Low Power Fast Switching, Output Stages for TV Radio and Audio Output Amplifiers PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. 7.4 7.8 B 10.5 10.8 C 2 .4 2.7 D 0.7 0.9 A 2 .2 5 TYP. E
|
OCR Scan
|
PDF
|
BD157,
B0158
23B33T4
|
|
BD157
Abstract: BD158
Text: BD157, B0158 BDI5 7 ,158 NPN PLASTIC POWER TRANSISTORS Low Power Fast Switching, Output Stages for TV Radio and Audio Output Amplifiers PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0 .7 0.9 E F 2 .2 5 TYP.
|
OCR Scan
|
PDF
|
BD157,
BD158
BDI57
23633T4
000120D
BD157
BD158
|
2SC509
Abstract: 2SA509 4687 transistor 2SA509-Y transistor 4687 2sa509 transistor 2SA509Y 2sc509 transistor RH-16 Produced by Perfect Crystal Device Technology
Text: 2/UD>PNPItr^2/?;i/»h5>5?^ PCTÄÄ ^ ^ L IC O N o & mantas m m o Audio Power Amplifier Applications b PNP EPITAXIAL TRANSISTOR (PCT PROCESS) Wl? v-y ^ 7 *-r; m 2SC509 i a v 7 V / v f y fri b -* -t ; 1 Watt Amplifier Applications Complementary to 2SC509 M ±
|
OCR Scan
|
PDF
|
2SC509
RH-16
2sa509
-30-SO
00X10Oxlmm
2SC509
2SA509
4687 transistor
2SA509-Y
transistor 4687
2sa509 transistor
2SA509Y
2sc509 transistor
RH-16
Produced by Perfect Crystal Device Technology
|
h 669A
Abstract: 2SD1270 C-123 2SB945 2SD1271
Text: 2SD1270 Power Transistors 2SD1270 Silicon NPN Epitaxial Planar Type Package Dim ensions Pow er Switching C om plem entary Pair with 2 S B 94 5 • Features • • • • 2.9max Low collector-em itter saturation voltage V ce <sao Good linearity of DC current gain (I i f e )
|
OCR Scan
|
PDF
|
2SB945
2SD1270
10MHz
2SD1271)
tT32flSE
h 669A
2SD1270
C-123
2SB945
2SD1271
|
3BS transistor
Abstract: S0642
Text: rz 7 ^ 7# SGS-THOMSON R L ie r a « S 0 6 4 2 SMALL SIGNAL NPN TRANSISTOR Type Marking SO 642 N91 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER
|
OCR Scan
|
PDF
|
S0692
OT-23
SC06960
S0642
OT-23
3BS transistor
S0642
|
2N4124
Abstract: 2N4123 2N4125 2N4126
Text: N AMER PHILIPS/DISCRETE bTE J> m bb53R31 0D2fllS2 42*1 IAPX Ü N 41Ü Ô 5 2N4124 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, prim arily intended fo r low-power, small-signal audio frequency applications fo r consumer service.
|
OCR Scan
|
PDF
|
2N4124
2N4125
2N4126.
2N4123
2N4124
2N4126
|
Untitled
Abstract: No abstract text available
Text: Ordering number: E N 2 8 0 9 2SA1656/2SC4363 PNP/NPN Epitaxial Planar Silicon Transistors SA i YO Switching Applications with Bias Resistance J A p p licatio n s • Switching circuit, inverter circuit, interface circuit, driver circuit F e a tu re s - On-chip bias resistance (R1 = 4.7kfi, R2=4.7kQ)
|
OCR Scan
|
PDF
|
2SA1656/2SC4363
2SA1656
rO-92
3C-43
|
BD722
Abstract: BD720 B0719 BD440 BD719 BD724 BD726 transistor 3bs NPN, Si, POWER TRANSISTOR, PLASTIC
Text: BD720 BD722 BD724 BD726 J SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a S O T3 2 plastic envelope intended fo r use in audio output and general purpose am plifier applications. BD 720 is equivalent to BD 440. NPN complements are B D 719; 721; 723 and
|
OCR Scan
|
PDF
|
BD720
BD722
BD724
BD726
BD440.
BD719;
BD724.
bd722
B0719
BD440
BD719
BD726
transistor 3bs
NPN, Si, POWER TRANSISTOR, PLASTIC
|
3BS transistor
Abstract: BD937F b0933 BD935F BD939F 935F BD935 d941 BD933F BD934F
Text: BD933F; BD935F BD937F; BD939F _ _ _ _BD941F _ PHILIPS I N T E R N A T I O N A L SbE D m 711002b 0043G52 3=12 « P H I N -SILICON EPITAXIAL POWER TRANSISTORS 7^ -J 3 ~ ô '7 ' NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base,
|
OCR Scan
|
PDF
|
BD933F;
BD935F
BD937F;
BD939F
BD941F
711002b
0043G52
OT186
BD934F,
BD936F,
3BS transistor
BD937F
b0933
935F
BD935
d941
BD933F
BD934F
|
transistor BD939F
Abstract: d941 935F b0933 939f 939-F BD-939F 937f BD941F BD939F
Text: BD933F; BD935F BD937F; BD939F BD941F PHILIPS INTE RNATIONAL SbE D • TllüûSb 00M3052 S^E ■ P H I N SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SO T186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o utpu t stages and fo r general purpose am plifier applications.
|
OCR Scan
|
PDF
|
BD933F;
BD935F
BD937F;
BD939F
BD941F
Q0M3052
OT186
BD934F,
BD936F,
BD938F,
transistor BD939F
d941
935F
b0933
939f
939-F
BD-939F
937f
BD941F
BD939F
|
BC 511
Abstract: Q62702-C2295 MARKING 3FS
Text: SIEMENS PNP Silicon A F Transistors BC 856W . BC 860W Features • • • • • For A F input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, B C 848W,
|
OCR Scan
|
PDF
|
Q62702-C2335
Q62702-C2292
Q62702-C2293
Q62702-C2294
Q62702-C2295
Q62702-C2296
Q62702-C2297
Q62702-C2298
Q62702-C2299
Q62702-C2300
BC 511
MARKING 3FS
|