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    TDK Corporation CC45SL3DD101JYVNA

    CAP CER 100PF 2KV SL RADIAL
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    DigiKey CC45SL3DD101JYVNA Cut Tape 5,295 1
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    CC45SL3DD101JYVNA Ammo Pack 4,000 1,000
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    Newark CC45SL3DD101JYVNA Bulk 3,104 1
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    TME CC45SL3DD101JYVNA 2,000
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    TDK Corporation CC45SL3DD151JYNNA

    CAP CER 150PF 2KV SL RADIAL
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    DigiKey CC45SL3DD151JYNNA Bulk 4,460 1
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    Newark CC45SL3DD151JYNNA Bulk 1,841 1
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    Avnet Abacus CC45SL3DD151JYNNA 23 Weeks 2,000
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    TDK Corporation CC45SL3DD101JYGNA

    CAP CER 100PF 2KV SL RADIAL
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    DigiKey CC45SL3DD101JYGNA Bulk 4,321 1
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    Newark CC45SL3DD101JYGNA Bulk 893 1
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    TME CC45SL3DD101JYGNA 2,000
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    Avnet Abacus CC45SL3DD101JYGNA 15 Weeks 2,000
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    TDK Corporation CC45SL3DD120JYNNA

    CAP CER 12PF 2KV SL RADIAL
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    DigiKey CC45SL3DD120JYNNA Bulk 1,000 1
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    TDK Corporation CK45-B3DD151KYGNA

    CAP CER 150PF 2KV RADIAL
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    DigiKey CK45-B3DD151KYGNA Bulk 998 1
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    3DD1 Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3DD10 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    3DD128D China Hua Jing Electronics Group NPN Transistor TO-220AB Original PDF
    3DD13001 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF
    3DD13001 Liao Wei Transistor for Saving Lamp Original PDF
    3DD13001 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    3DD13001 Unknown TO 92 PLASTIC ENCAPSULATE TRANSISTORS Scan PDF
    3DD13001A1 China Hua Jing Electronics Group NPN Transistor TO-92 Original PDF
    3DD13001-TO-251 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF
    3DD13001-TO-92 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF
    3DD13002 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF
    3DD13002 Macrobizes TO-251 Plastic-Encapsulate Transistors Original PDF
    3DD13002 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    3DD13002 Unknown TRANSISTOR(NPN) Scan PDF
    3DD13002B Jiangsu Changjiang Electronics Technology TRANSISTOR (NPN) Original PDF
    3DD13002B Weitron Switch Mode NPN Transistors Original PDF
    3DD13002B-TO-92 Jiangsu Changjiang Electronics Technology TRANSISTOR (NPN) Original PDF
    3DD13002-TO-126 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF
    3DD13002-TO-251 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF
    3DD13002-TO-92 Jiangsu Changjiang Electronics Technology TRANSISTOR (NPN) Original PDF
    3DD13003 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF

    3DD1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Power switching applications A D REF. B A B C D E F G H J K Collector 2 E C G H F 3


    Original
    3DD13003B 400mA 500mA 100mA 100mA, 15-Jun-2011 PDF

    3DD128F

    Abstract: 3DD12 3DD128 TO-126-F 051MAX TO-126F W5045
    Text: 华晶分立器件 3DD128F 低频放大管壳额定双极型晶体管 1 概述与特点 3DD128F 主要用于低压电子镇流器中作功率开关 是电子镇流器的核心器件 该产品采用了 一种特殊结构 巧妙地将二极管直接设计集成在 E C 极之间 既简化了外围线路 节省了应用成


    Original
    3DD128F O-126F 16min 75max 51max 500mA 3DD128F 3DD12 3DD128 TO-126-F 051MAX TO-126F W5045 PDF

    3DD128D

    Abstract: 3DD12 3DD128
    Text: 华晶分立器件 3DD128D 低频放大管壳额定双极型晶体管 1 概述与特点 6.9max 16.5max 3DD128D 硅 NPN 型功率开关晶体管 主要用于电子节能灯 电子镇流器 该产品采用了一种 特殊设计 将保护二极管直接集成在 E C 极之间 既简化了外围线路 又提高了产品自身的可靠


    Original
    3DD128D O-220AB 56min 500mA 3DD128D 3DD12 3DD128 PDF

    3dd13003

    Abstract: No abstract text available
    Text: 华晶分立器件 3DD13003 F6 低频放大管壳额定双极型晶体管 1 概述与特点 4.4max 3DD13003(F6)硅 NPN 型功率开关晶体管 主要用于电子节能灯 电子镇流器的功率开关电路 其特点如下 击穿电压高 反向漏电小


    Original
    3DD13003 3DD13003 O-126 PDF

    DD260N16K

    Abstract: DD350N08K DD89N 580f 335F DD261N22K DD600N08K dd260
    Text: B6U - Schaltung verst. Luftkühlung TA = 35°C click on MB to select outline Typenbezeichnung SAP Bauelement KK Lüfter MB B6U 230/310 - 160F - KM14-3DD89N-LRCT B6U 230/310 - 235F - KM14-3DD104N-LRCT B6U 230/310 - 335F - KM14-3DD171N-LRCT B6U 230/310 - 450F - KM17-3DD260N-LRCT


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    KM14-3DD89N-LRCT KM14-3DD104N-LRCT KM14-3DD171N-LRCT KM17-3DD260N-LRCT KM17-3DD350N-LRCT 3KM14-3DD260N-LRCT 3KM14-3DD350N-LRCT -1100F- 3KM17-3DD600N-LRCT DD89N08K DD260N16K DD350N08K DD89N 580f 335F DD261N22K DD600N08K dd260 PDF

    310f diode

    Abstract: DD89N14K 310F DD104N16K DD151N14K DD151N08K DD260N16K 15851 DD151N16K DD151N
    Text: B6U - Schaltung Luftselbstkühlung TA = 45 °C mit Strangsicherungen verstärkte Luftkühlung TA = 35 °C click on MB to select outline Typenbezeichnung SAP Bauelement KK Sicherung B6U 230/310 - 120S - KM33-3DD89N-RCS B6U 230/310 - 135S - KM33-3DD104N-RCS


    Original
    KM33-3DD89N-RCS KM33-3DD104N-RCS KM17-3DD260N-RCS KM14-3DD85N-LRCST KM14-3DD151N-LRCST KM17-3DD171N-LRCST DD89N08K DD104N08K DD260N08K DD85N08K 310f diode DD89N14K 310F DD104N16K DD151N14K DD151N08K DD260N16K 15851 DD151N16K DD151N PDF

    3dd13003

    Abstract: UI9600
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TO-220 3DD13003 TRANSISTOR NPN 1. BASE FEATURES 2. COLLECTOR • power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter


    Original
    O-220 O-220 3DD13003 100mA, 250mA UI9600) 3DD13003 UI9600 PDF

    3DD13007

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR NPN TO-220 FEATURES power switching applications 1.BASE 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 123 3.EMITTER Symbol Parameter


    Original
    O-220 3DD13007 O-220 500mA 3DD13007 PDF

    3DD13002B

    Abstract: BR 610v
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR( NPN ) TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter


    Original
    3DD13002B 200mA 200mA, 100mA 3DD13002B BR 610v PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSIS TOR NPN TO-220 FEATURES power switching applications 1.BASE 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3.EMITTER Symbol Parameter


    Original
    O-220 3DD13007 O-220 500mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13002N8D TRANSISTOR NPN TO-126 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR


    Original
    O-126 3DD13002N8D O-126 200mA 200mA 100mA UI9600) PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251-3L TO-252-2L FEATURE • power switching applications 123 1. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol


    Original
    O-251-3L/TO-252-2L 3DD13002 O-251-3L O-252-2L Parameter100Î 200mA 200mA, 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251 TO-252-2L FEATURE • power switching applications 123 1. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter


    Original
    O-251/TO-252-2L 3DD13002 O-251 O-252-2L 200mA 200mA, 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13003N96 TO-92 TRANSISTOR NPN FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR


    Original
    3DD13003N96 250mA UI9600) PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/3DD13002B TRANSISTOR( NPN ) FEATURE Power dissipation PCM : 3DD13002 : 1.2 W (Tamb=25℃) 3DD13002B: 1 W (Tamb=25℃) Collector current ICM :


    Original
    3DD13002/3DD13002B 3DD13002 3DD13002Bï 270TYP 050TYP PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TO-92 TRANSISTOR(NPN) FEATURE 1.EMITTER Power Switching Applications 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter 3. BASE


    Original
    3DD13002B PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003L3D TRANSISTOR NPN TO-126 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR


    Original
    O-126 3DD13003L3D O-126 250mA UI9600) PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-251-3L FEATURES power switching applications 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original
    O-251-3L 3DD13001 O-251-3L PDF

    3DD13003

    Abstract: 3DD13003K7 TO-126F
    Text: 华晶分立器件 3DD13003K7 低频放大管壳额定双极型晶体管 1 概述与特点 3DD13003K7 硅 NPN 型功率开关晶体管 主要用于电子节能灯 电子镇流器的功率开关电路 其特点如下 高温特性好 开关速度快 饱和压降低 电流特性好


    Original
    3DD13003K7 O-126F 16min 75max 51max 500mA 250mA 100mA 3DD13003 3DD13003K7 TO-126F PDF

    3DD13002B

    Abstract: 3DD13002
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn 3DD13002B TRANSISTOR( NPN ) TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol


    Original
    3DD13002B 200mA 200mA, 100mA 3DD13002B 3DD13002 PDF

    3DD13002

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13002 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1.25 1. BASE W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range


    Original
    O-251 3DD13002 O-251 200mA, 100mA 3DD13002 PDF

    3DD13005

    Abstract: TRANSISTOR npn ic 1000ma
    Text: Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 3DD13005 TRANSISTOR NPN TO-220 FEATURES Power dissipation 1. BASE 2. COLLECTOR PCM: 1.5 W (Tamb=25℃) 3. EMITTER Collector current 4 A ICM: Collector-base voltage 700 V V(BR)CBO:


    Original
    O-220 3DD13005 O-220 1000mA 2000mA, 500mA 3DD13005 TRANSISTOR npn ic 1000ma PDF

    dd540n22k

    Abstract: b6u-500/670 DD171N16K 100S 305S KM14-3DD89N-RC DD98N22K DD350N08K DD104N16K DD98
    Text: B6U - Schaltung Luftselbstkühlung TA = 45 °C click on MB to select outline Typenbezeichnung SAP B6U 230/310 - 100S - KM14-3DD89N-RC B6U 230/310 - 115S - KM14-3DD104N-RC B6U 230/310 - 135S - KM14-3DD171N-RC B6U 230/310 - 165S - KM17-3DD171N-RC B6U 230/310 - 275S - 3KM14-3DD171N-RC


    Original
    KM14-3DD89N-RC KM14-3DD104N-RC KM14-3DD171N-RC KM17-3DD171N-RC 3KM14-3DD171N-RC 3KM14-3DD350N-RC 3KM17-3DD600N-RC DD89N08K DD104N08K DD171N08K dd540n22k b6u-500/670 DD171N16K 100S 305S KM14-3DD89N-RC DD98N22K DD350N08K DD104N16K DD98 PDF

    TP220 transistor

    Abstract: TP220
    Text: M C C TP-220 P lastic-E n cap su late T r a n s is t o r s ^ 3DD13003 TRANSISTOR NPN F E ATURE S ( . I1 W _ nation J _ T0-220 Pcm: S^iirrent 1. B A S E tt +i Ic 2.C O L L E C T O R ; 1.5 A V (B R )C B O ; LU LU UJ 2 m Collector-base voltage 3.E M I T T E R


    OCR Scan
    TP-220 3DD13003 T0-220 3DD13003 TP220 transistor TP220 PDF