3DD13002B
Abstract: BR 610v
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR（ NPN ） TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter
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3DD13002B
200mA
200mA,
100mA
3DD13002B
BR 610v
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/3DD13002B TRANSISTOR（ NPN ） FEATURE Power dissipation PCM : 3DD13002 ： 1.2 W （Tamb=25℃） 3DD13002B： 1 W （Tamb=25℃） Collector current ICM :
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3DD13002/3DD13002B
3DD13002
3DD13002Bï
270TYP
050TYP
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TO-92 TRANSISTOR（NPN） FEATURE 1.EMITTER Power Switching Applications 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter 3. BASE
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3DD13002B
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3DD13002B
Abstract: 3DD13002
Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn 3DD13002B TRANSISTOR（ NPN ） TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol
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3DD13002B
200mA
200mA,
100mA
3DD13002B
3DD13002
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PDF
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Untitled
Abstract: No abstract text available
Text: 3DD13002B Switch Mode NPN Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO
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3DD13002B
270TYP
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PDF
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Untitled
Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO:
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3DD13002/
3DD13002B
3DD13002:
3DD13002B:
200mA,
100mA
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PDF
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3DD13002B
Abstract: No abstract text available
Text: 3DD13002B Switch Mode NPN Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO IC Value 400 600 6.0 1.0
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3DD13002B
270TYP
3DD13002B
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npn 600v to92
Abstract: 3DD13002B TRANSISTOR NPN 3DD13002 3DD13002B transistor 600v. 1a. to 92
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A
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3DD13002/
3DD13002B
3DD13002:
3DD13002B:
200mA,
100mA
npn 600v to92
3DD13002B TRANSISTOR NPN
3DD13002
3DD13002B
transistor 600v. 1a. to 92
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR（ NPN ） TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter
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3DD13002B
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR（ NPN ） TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter
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Original
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3DD13002B
200mA
200mA,
100mA
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PDF
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Untitled
Abstract: No abstract text available
Text: 3DD13002B NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 1.25MAX 3. BASE 2.92 MIN 12.7 6.35 MIN MIN 0.41 0.41 0.53 0.48 Seating Plane Features power switching applications 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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3DD13002B
25MAX
200mA,
100mA
200mA
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3DD13002
Abstract: 3DD13002B
Text: 3DD13002/B 3DD13002/ 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range
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3DD13002/B
3DD13002/
3DD13002B
3DD13002:
3DD13002B:
200mA,
100mA
3DD13002
3DD13002B
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